Inventor · disambiguated record
Jacques Faguet
Also filed as: FAGUET JACQUES
35 granted patents·17 pending applications·794 citations·filing 1995–2022
97Inventor score
Top patents by PatentIndex Score
52 records- 0199US7897217B2Method and system for performing plasma enhanced atomic layer depositionTOKYO ELECTRON LTD·Filed 2005·Granted Mar 1, 2011·442 cites·22 claims
- 0298US7959985B2Method of integrating PEALD Ta-containing films into Cu metallizationTOKYO ELECTRON LTD·Filed 2006·Granted Jun 14, 2011·61 cites·34 claims
- 0397US9139910B2Method for chemical vapor deposition controlLEE ERIC M·Filed 2010·Granted Sep 22, 2015·38 cites·20 claims
- 0497US8852347B2Apparatus for chemical vapor deposition controlLEE ERIC M·Filed 2010·Granted Oct 7, 2014·40 cites·22 claims
- 0595US9157152B2Vapor deposition systemFAGUET JACQUES·Filed 2011·Granted Oct 13, 2015·12 cites·17 claims
- 0695US8895942B2Dielectric treatment module using scanning IR radiation sourceLIU JUNJUN·Filed 2008·Granted Nov 25, 2014·44 cites·30 claims
- 0795US8163087B2Plasma enhanced atomic layer deposition system and methodFAGUET JACQUES·Filed 2005·Granted Apr 24, 2012·29 cites·11 claims
- 0894US7485338B2Method for precursor deliveryTOKYO ELECTRON LTD·Filed 2005·Granted Feb 3, 2009·19 cites·22 claims
- 0991US8272347B2High temperature gas heating device for a vapor deposition systemNASMAN RONALD·Filed 2009·Granted Sep 25, 2012·13 cites·19 claims
- 1089US11691175B1Methods for area-selective deposition of polymer films using sequentially pulsed initiated chemical vapor deposition (spiCVD)TOKYO ELECTRON LTD·Filed 2022·Granted Jul 4, 2023·2 cites·23 claims
- 1189US9212420B2Chemical vapor deposition methodLEE ERIC M·Filed 2010·Granted Dec 15, 2015·6 cites·23 claims
- 1285US12290835B2Methods for stabilization of self-assembled monolayers (SAMs) using sequentially pulsed initiated chemical vapor deposition (spiCVD)TOKYO ELECTRON LTD·Filed 2022·Granted May 6, 2025·1 cites·20 claims
- 1385US8291856B2Gas heating device for a vapor deposition systemNASMAN RONALD·Filed 2008·Granted Oct 23, 2012·9 cites·17 claims
- 1483US7569491B2Method for enlarging a nano-structureTOKYO ELECTRON LTD·Filed 2006·Granted Aug 4, 2009·5 cites·27 claims
- 1578US7182816B2Particulate reduction using temperature-controlled chamber shieldTOKYO ELECTRON LTD·Filed 2003·Granted Feb 27, 2007·20 cites·27 claims
- 1676US10115586B2Method for depositing a planarization layer using polymerization chemical vapor depositionTOKYO ELECTRON LTD·Filed 2017·Granted Oct 30, 2018·3 cites·20 claims
- 1775US7771790B2Method and system for fabricating a nano-structureTOKYO ELECTRON LTD·Filed 2006·Granted Aug 10, 2010·5 cites·33 claims
- 1874US8815014B2Method and system for performing different deposition processes within a single chamberFAGUET JACQUES·Filed 2011·Granted Aug 26, 2014·3 cites·15 claims
- 1972US8242460B2Ultraviolet treatment apparatusYUE HONGYU·Filed 2011·Granted Aug 14, 2012·3 cites·20 claims
- 2067US8916055B2Method and device for controlling pattern and structure formation by an electric fieldBRCKA JOZEF·Filed 2012·Granted Dec 23, 2014·1 cites·35 claims
- 2166US7727912B2Method of light enhanced atomic layer depositionTOKYO ELECTRON LTD·Filed 2006·Granted Jun 1, 2010·2 cites·30 claims
- 2265US5972790AMethod for forming salicidesTOKYO ELECTRON LTD·Filed 1995·Granted Oct 26, 1999·24 cites·9 claims
- 2361US2012315404A1Apparatus for thermal and plasma enhanced vapor deposition and method of operatingLI YICHENG·Filed 2012·Application pending·0 cites
- 2460US2016024651A1Vapor deposition system and method of operatingTOKYO ELECTRON LTD·Filed 2015·Application pending·0 cites
- 2558US7744735B2Ionized PVD with sequential deposition and etchingTOKYO ELECTRON LTD·Filed 2004·Granted Jun 29, 2010·6 cites·30 claims
- 2657US2015152556A1Method and device for controlling pattern and structure formation by an electric fieldTOKYO ELECTRON LTD·Filed 2014·Application pending·0 cites
- 2757US2007116872A1Apparatus for thermal and plasma enhanced vapor deposition and method of operatingTOKYO ELECTRON LTD·Filed 2005·Application pending·0 cites
- 2855US12131914B2Selective etching with fluorine, oxygen and noble gas containing plasmasTOKYO ELECTRON LTD·Filed 2021·Granted Oct 29, 2024·0 cites·20 claims
- 2954US7901545B2Ionized physical vapor deposition (iPVD) processTOKYO ELECTRON LTD·Filed 2004·Granted Mar 8, 2011·6 cites·12 claims
- 3054US2008241377A1Vapor deposition system and method of operatingTOKYO ELECTRON LTD·Filed 2007·Application pending·0 cites
- 3153US12249515B2Etching method and etching apparatusTOKYO ELECTRON LTD·Filed 2021·Granted Mar 11, 2025·0 cites·16 claims
- 3253US12243752B2Systems for etching a substrate using a hybrid wet atomic layer etching processTOKYO ELECTRON LTD·Filed 2022·Granted Mar 4, 2025·0 cites·20 claims
- 3353US11915941B2Dynamically adjusted purge timing in wet atomic layer etchingTOKYO ELECTRON LTD·Filed 2022·Granted Feb 27, 2024·0 cites·21 claims
- 3453US11866831B2Methods for wet atomic layer etching of copperTOKYO ELECTRON LTD·Filed 2022·Granted Jan 9, 2024·0 cites·22 claims
- 3552US12444610B2Methods for etching a substrate using a hybrid wet atomic layer etching processTOKYO ELECTRON LTD·Filed 2022·Granted Oct 14, 2025·0 cites·19 claims
- 3651US11371143B2Implementing the post-porosity plasma protection (P4) process using I-CVDIBM·Filed 2019·Granted Jun 28, 2022·0 cites·41 claims
- 3751US10818512B2Photo-assisted chemical vapor etch for selective removal of rutheniumTOKYO ELECTRON LTD·Filed 2020·Granted Oct 27, 2020·0 cites·20 claims
- 3851US2007116888A1Method and system for performing different deposition processes within a single chamberTOKYO ELECTRON LTD·Filed 2005·Application pending·0 cites
- 3949US2009321247A1IONIZED PHYSICAL VAPOR DEPOSITION (iPVD) PROCESSTOKYO ELECTRON LTD·Filed 2009·Application pending·0 cites
- 4048US2010068897A1Dielectric treatment platform for dielectric film deposition and curingTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 4148US2010065758A1Dielectric material treatment system and method of operatingTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 4248US2010067886A1Ir laser optics system for dielectric treatment moduleTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 4348US2012213929A1Method of operating filament assisted chemical vapor deposition systemLEE ERIC M·Filed 2011·Application pending·0 cites
- 4447US12112959B2Processing systems and platforms for roughness reduction of materials using illuminated etch solutionsTOKYO ELECTRON LTD·Filed 2019·Granted Oct 8, 2024·0 cites·18 claims
- 4547US11120999B2Plasma etching methodTOKYO ELECTRON LTD·Filed 2018·Granted Sep 14, 2021·0 cites·7 claims
- 4647US10896824B2Roughness reduction methods for materials using illuminated etch solutionsTOKYO ELECTRON LTD·Filed 2019·Granted Jan 19, 2021·0 cites·27 claims
- 4747US2011244128A1Flow plate utilization in filament assisted chemical vapor depositionTOKYO ELECTRON LTD·Filed 2010·Application pending·0 cites
- 4846US2017037509A1Method for coating or filling a porous materialTOKYO ELECTRON LTD·Filed 2016·Application pending·0 cites
- 4946US2022254683A1Removal of stray ruthenium metal nuclei for selective ruthenium metal layer formationTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 5044US2021242031A1Method for using ultra-thin etch stop layers in selective atomic layer etchingTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
Showing the top 50 of 52 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →