Method and device for controlling pattern and structure formation by an electric field

Abstract

A processing method and apparatus uses at least one electric field applicator ( 34 ) biased to produce a spatial-temporal electric field to affect a processing medium ( 26 ), suspended nano-objects ( 28 ) or the substrate ( 30 ) in processing, interacting with the dipole properties of the medium ( 26 ) or particles to construct structure on the substrate ( 30 ). The apparatus may include a magnetic field, an acoustic field, an optical force, or other generation device. The processing may affect selective localized layers on the substrate ( 30 ) or may control orientation of particles in the layers, control movement of dielectrophoretic particles or media, or cause suspended particles of different properties to follow different paths in the processing medium ( 26 ). Depositing or modifying a layer on the substrate ( 30 ) may be carried out. Further, the processing medium ( 26 ) and electrical bias may be selected to prepare at least one layer on the substrate ( 30 ) for bonding the substrate ( 30 ) to a second substrate, or to deposit carbon nanotubes (CNTs) with a controlled orientation on the substrate.

What is claimed is: 
     
         1 . An electric field processing apparatus comprising:
 a processing chamber configured to receive a substrate and a processing medium having dielectric properties affected by an electric field;   at least one electric field applicator, and   a distribution coupling unit for coupling an electrical bias to the at least one electric field applicator,   wherein the at least one electric field applicator includes at least one electric field applicator directly coupled to the processing chamber, and   wherein the apparatus is configured for applying a non-uniform, time-varying electrical bias to the at least one electric field applicator to create an electric field to exert a dipolar effect on the processing medium in the vicinity of or at the surface of the substrate, or both.   
     
     
         2 . The apparatus of  claim 1 , further comprising:
 means for irradiating the substrate with at least one of microwave radiation, ultraviolet radiation, or infrared radiation.   
     
     
         3 . The apparatus of  claim 1 , further comprising:
 means for depositing or modifying a layer on the substrate with filament-assisted chemical vapor deposition (FACVD), initiated chemical vapor deposition (iCVD), or both.   
     
     
         4 . The apparatus of  claim 1 , wherein the at least one electric field applicator coupled to the processing chamber includes a bottom electric field applicator directly coupled outside of the processing chamber beneath the substrate. 
     
     
         5 . The apparatus of  claim 4 , wherein the at least one electric field applicator coupled to the processing chamber includes a top electric field applicator directly coupled to the processing chamber above the substrate. 
     
     
         6 . The apparatus of  claim 5 , wherein the at least one electric field applicator includes an internal electric field applicator coupled to the substrate. 
     
     
         7 . The apparatus of  claim 1 , wherein the at least one electric field applicator coupled to the processing chamber includes a top electric field applicator directly coupled to the processing chamber above the substrate. 
     
     
         8 . The apparatus of  claim 1 , wherein the at least one electric field applicator includes an internal electric field applicator coupled to the substrate. 
     
     
         9 . The apparatus of  claim 1 , wherein the at least one electric field applicator coupled to the processing chamber is interchangeable. 
     
     
         10 . The apparatus of  claim 1 , wherein the at least one electric field applicator is of a size substantially equal to the size of the substrate. 
     
     
         11 . The apparatus of  claim 1 , wherein the at least one electric field applicator is of a size smaller than the size of the substrate and is configured to be scanned across the substrate. 
     
     
         12 . The apparatus of  claim 1 , wherein the electrical bias includes a DC potential bias. 
     
     
         13 . The apparatus of  claim 1 , wherein the electrical bias includes an AC or RF potential bias. 
     
     
         14 . The apparatus of  claim 1 , wherein the at least one electric field applicator is in direct electrical contact with the distribution coupling unit for applying the electrical bias. 
     
     
         15 . The apparatus of  claim 1 , wherein the at least one electric field applicator is inductively coupled to the distribution coupling unit for applying the electrical bias. 
     
     
         16 . The apparatus of  claim 1 , wherein the at least one electric field applicator is capacitively coupled to the distribution coupling unit for applying the electrical bias.