Inventor · disambiguated record
Xusheng Wu
Also filed as: WU XUSHENG · WU XUSHENG KEVIN
119 granted patents·26 pending applications·685 citations·filing 2005–2025
99Inventor score
Files withGLOBALFOUNDRIES INC97TAIWAN SEMICONDUCTOR MFG CO LTD41GLOBALFOUNDRIES US INC2NAVAL UNIV OF ENGINEERING2UNIV HONG KONG SCIENCE & TECHN2
Top patents by PatentIndex Score
145 records- 0198US11769819B2Semiconductor device structure with metal gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 26, 2023·4 cites·20 claims
- 0298US11444179B2Isolation structures in multi-gate semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·5 cites·20 claims
- 0398US10176995B1Methods, apparatus and system for gate cut process using a stress material in a finFET deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 8, 2019·29 cites·20 claims
- 0498US9972495B1Low-K dielectric spacer for a gate cutGLOBALFOUNDRIES INC·Filed 2016·Granted May 15, 2018·21 cites·15 claims
- 0598US9812365B1Methods of cutting gate structures on transistor devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 7, 2017·26 cites·18 claims
- 0698US9679985B1Devices and methods of improving device performance through gate cut last processGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 13, 2017·30 cites·14 claims
- 0798US9455198B1Methods of removing fins so as to form isolation structures on products that include FinFET semiconductor devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Sep 27, 2016·51 cites·20 claims
- 0898US9171752B1Product comprised of FinFET devices with single diffusion break isolation structures, and methods of making such a productGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 27, 2015·83 cites·17 claims
- 0997US10236218B1Methods, apparatus and system for forming wrap-around contact with dual silicideGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 19, 2019·19 cites·15 claims
- 1097US10217846B1Vertical field effect transistor formation with critical dimension controlGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 26, 2019·21 cites·11 claims
- 1197US9935104B1Fin-type field effect transistors with single-diffusion breaks and methodGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 3, 2018·16 cites·14 claims
- 1297US9379104B1Method to make gate-to-body contact to release plasma induced chargingGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 28, 2016·15 cites·13 claims
- 1397US9343371B1Fabricating fin structures with doped middle portionsGLOBALFOUNDRIES INC·Filed 2015·Granted May 17, 2016·17 cites·20 claims
- 1497US9263516B1Product comprised of FinFET devices with single diffusion break isolation structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 16, 2016·22 cites·11 claims
- 1596US11948998B2Isolation structures in multi-gate semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·2 cites·20 claims
- 1696US11916105B2Semiconductor device with corner isolation protection and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 27, 2024·3 cites·20 claims
- 1796US9761491B1Self-aligned deep contact for vertical FETGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 12, 2017·16 cites·20 claims
- 1895US9337306B2Multi-phase source/drain/gate spacer-epi formationGLOBALFOUNDRIES INC·Filed 2014·Granted May 10, 2016·26 cites·16 claims
- 1994US10446483B2Metal-insulator-metal capacitors with enlarged contact areasGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 15, 2019·12 cites·20 claims
- 2094US10014409B1Method and structure to provide integrated long channel vertical FinFET deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 3, 2018·10 cites·9 claims
- 2194US9916982B1Dielectric preservation in a replacement gate processGLOBALFOUNDRIES INC·Filed 2016·Granted Mar 13, 2018·10 cites·14 claims
- 2294US9865681B1Nanowire transistors having multiple threshold voltagesGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 9, 2018·12 cites·20 claims
- 2394US9419015B1Method for integrating thin-film transistors on an isolation region in an integrated circuit and resulting deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 16, 2016·11 cites·14 claims
- 2494US9123773B1T-shaped single diffusion barrier with single mask approach process flowGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 1, 2015·34 cites·20 claims
- 2593US10068810B1Multiple Fin heights with dielectric isolationGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 4, 2018·9 cites·10 claims
- 2693US10032910B2FinFET devices having asymmetrical epitaxially-grown source and drain regions and methods of forming the sameGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 24, 2018·9 cites·10 claims
- 2793US9991361B2Methods for performing a gate cut last scheme for FinFET semiconductor devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 5, 2018·9 cites·20 claims
- 2892US11121236B2Semiconductor device with air spacer and stress linerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·7 cites·20 claims
- 2992US9837553B1Vertical field effect transistorGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 5, 2017·8 cites·16 claims
- 3092US9576894B2Integrated circuits including organic interlayer dielectric layers and methods for fabricating the sameGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 21, 2017·9 cites·20 claims
- 3191US10586860B2Method of manufacturing finfet devices using narrow and wide gate cut openings in conjunction with a replacement metal gate processGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 10, 2020·6 cites·10 claims
- 3291US10483369B2Methods of forming replacement gate structures on transistor devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 19, 2019·7 cites·11 claims
- 3391US10050125B1Vertical-transport field-effect transistors with an etched-through source/drain cavityGLOBALFOUNDRIES INC·Filed 2017·Granted Aug 14, 2018·6 cites·17 claims
- 3490US11387146B2Semiconductor device with air gaps between metal gates and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·2 cites·20 claims
- 3590US9964605B2Methods for crossed-fins FinFET device for sensing and measuring magnetic fieldsGLOBALFOUNDRIES INC·Filed 2016·Granted May 8, 2018·6 cites·10 claims
- 3690US9870942B1Method of forming mandrel and non-mandrel metal lines having variable widthsGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 16, 2018·7 cites·20 claims
- 3790US9418899B1Method of multi-WF for multi-Vt and thin sidewall deposition by implantation for gate-last planar CMOS and FinFET technologyGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 16, 2016·8 cites·14 claims
- 3888US11328982B2Air gap seal for interconnect air gap and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 10, 2022·2 cites·20 claims
- 3988US10062772B2Preventing bridge formation between replacement gate and source/drain region through STI structureGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 28, 2018·5 cites·10 claims
- 4088US10008576B2Epi facet height uniformity improvement for FDSOI technologiesGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 26, 2018·5 cites·9 claims
- 4187US10522679B2Selective shallow trench isolation (STI) fill for stress engineering in semiconductor structuresGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 31, 2019·6 cites·20 claims
- 4286US10644156B2Methods, apparatus, and system for reducing gate cut gouging and/or gate height loss in semiconductor devicesGLOBALFOUNDRIES INC·Filed 2018·Granted May 5, 2020·5 cites·12 claims
- 4385US12132096B2Semiconductor device structure with metal gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 29, 2024·0 cites·20 claims
- 4485US9721949B1Method of forming super steep retrograde wells on FinFETGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 1, 2017·3 cites·13 claims
- 4585US9601392B1Device characterization by time dependent charging dynamicsGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 21, 2017·4 cites·13 claims
- 4685US9583625B2Fin structures and multi-Vt scheme based on tapered fin and method to formGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 28, 2017·4 cites·8 claims
- 4785US9543297B1Fin-FET replacement metal gate structure and method of manufacturing the sameGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 10, 2017·5 cites·11 claims
- 4885US2024387691A1Semiconductor device structure with metal gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4984US7545008B2Complementary metal-oxide-semiconductor transistor structure for high density and high performance integrated circuitsUNIV HONG KONG SCIENCE & TECHN·Filed 2006·Granted Jun 9, 2009·13 cites·30 claims
- 5083US9972621B1Fin structure in sublitho dimension for high performance CMOS applicationGLOBALFOUNDRIES INC·Filed 2017·Granted May 15, 2018·4 cites·19 claims
Showing the top 50 of 145 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →