Inventor · disambiguated record
Masashi Shima
Also filed as: SHIMA MASASHI
49 granted patents·8 pending applications·313 citations·filing 1995–2016
98Inventor score
Files withSHIMA MASASHI19FUJITSU LTD15FUJITSU SEMICONDUCTOR LTD14FUJITSU MICROELECTRONICS LTD5SOCIONEXT INC3
Top patents by PatentIndex Score
57 records- 0198US7667227B2Semiconductor device and fabrication method thereofFUJITSU MICROELECTRONICS LTD·Filed 2009·Granted Feb 23, 2010·77 cites·4 claims
- 0296US8853673B2Semiconductor device and fabrication method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Oct 7, 2014·15 cites·4 claims
- 0394US9112027B2Semiconductor device and fabrication method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2014·Granted Aug 18, 2015·9 cites·18 claims
- 0494US7791064B2Semiconductor device and fabrication method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2005·Granted Sep 7, 2010·18 cites·10 claims
- 0593US7378305B2Semiconductor integrated circuit and fabrication process thereofFUJITSU LTD·Filed 2005·Granted May 27, 2008·27 cites·9 claims
- 0693US7202120B2Semiconductor integrated circuit device and fabrication process thereofFUJITSU LTD·Filed 2005·Granted Apr 10, 2007·23 cites·4 claims
- 0791US8633075B2Semiconductor device with high voltage transistorFUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Jan 21, 2014·9 cites·4 claims
- 0888US8466450B2Semiconductor device and fabrication method thereofSHIMAMUNE YOSUKE·Filed 2010·Granted Jun 18, 2013·6 cites·7 claims
- 0988US7816766B2Semiconductor device with compressive and tensile stressesFUJITSU SEMICONDUCTOR LTD·Filed 2005·Granted Oct 19, 2010·16 cites·12 claims
- 1086US7262465B2P-channel MOS transistor and fabrication process thereofFUJITSU LTD·Filed 2005·Granted Aug 28, 2007·13 cites·7 claims
- 1185US7518188B2P-channel MOS transistor and fabrication process thereofFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Apr 14, 2009·10 cites·9 claims
- 1282US8106467B2Semiconductor device having carrier mobility raised by generating strain in channel regionSHIMA MASASHI·Filed 2006·Granted Jan 31, 2012·10 cites·16 claims
- 1378US9865734B2Semiconductor device and fabrication method thereofSOCIONEXT INC·Filed 2016·Granted Jan 9, 2018·1 cites·21 claims
- 1478US8080845B2Semiconductor deviceSHIMA MASASHI·Filed 2009·Granted Dec 20, 2011·7 cites·2 claims
- 1578US8072031B2P-channel MOS transistor and semiconductor integrated circuit deviceSHIMA MASASHI·Filed 2008·Granted Dec 6, 2011·6 cites·6 claims
- 1677US8362522B2Semiconductor device and method for manufacturing the sameFUJITSU SEMICONDUCTOR LTD·Filed 2011·Granted Jan 29, 2013·3 cites·15 claims
- 1777US7435656B2Semiconductor device of transistor structure having strained semiconductor layerFUJITSU LTD·Filed 2005·Granted Oct 14, 2008·6 cites·17 claims
- 1875US6380604B1Quantum semiconductor device having quantum dots and optical detectors using the sameFUJITSU LTD·Filed 2001·Granted Apr 30, 2002·20 cites·43 claims
- 1973US8552511B2Semiconductor device and manufacturing method thereofSHIMA MASASHI·Filed 2011·Granted Oct 8, 2013·3 cites·5 claims
- 2072US8049251B2Semiconductor device and method for manufacturing the sameFUJITSU SEMICONDUCTOR LTD·Filed 2006·Granted Nov 1, 2011·3 cites·7 claims
- 2171US8603874B2Method of manufacturing semiconductor deviceSHIMA MASASHI·Filed 2010·Granted Dec 10, 2013·2 cites·14 claims
- 2265US8987106B2Semiconductor device manufacturing methodSHIMA MASASHI·Filed 2011·Granted Mar 24, 2015·2 cites·7 claims
- 2363US7476941B2Semiconductor integrated circuit device and fabrication process thereofFUJITSU MICROELECTRONICS LTD·Filed 2007·Granted Jan 13, 2009·2 cites·12 claims
- 2462US9577098B2Semiconductor device and fabrication method thereofSOCIONEXT INC·Filed 2016·Granted Feb 21, 2017·0 cites·19 claims
- 2562US8067291B2MOS field-effect transistor and manufacturing method thereofSHIMA MASASHI·Filed 2007·Granted Nov 29, 2011·2 cites·8 claims
- 2662US6777728B2Semiconductor device and complementary semiconductor deviceFUJITSU LTD·Filed 2002·Granted Aug 17, 2004·10 cites·14 claims
- 2761US8222701B2P-channel MOS transistor and semiconductor integrated circuit deviceSHIMA MASASHI·Filed 2011·Granted Jul 17, 2012·1 cites·4 claims
- 2860US9401427B2Semiconductor device and fabrication method thereofSOCIONEXT INC·Filed 2015·Granted Jul 26, 2016·0 cites·18 claims
- 2960US8674437B2Semiconductor device and method for manufacturing semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Mar 18, 2014·1 cites·10 claims
- 3056US9123742B2Semiconductor device and method for manufacturing semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Sep 1, 2015·0 cites·4 claims
- 3155US7030465B2Semiconductor device that can increase the carrier mobility and method for fabricating the sameFUJITSU LTD·Filed 2004·Granted Apr 18, 2006·6 cites·16 claims
- 3253US8188553B2Semiconductor device and method for making the sameSHIMA MASASHI·Filed 2007·Granted May 29, 2012·0 cites·10 claims
- 3352US8841725B2Semiconductor device having channel dose region and method for manufacturing semiconductor deviceSHIMA MASASHI·Filed 2010·Granted Sep 23, 2014·0 cites·8 claims
- 3452US8741724B2Method of manufacturing semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Jun 3, 2014·0 cites·8 claims
- 3552US8143675B2Semiconductor device and method of manufacturing semiconductor deviceSHIMA MASASHI·Filed 2009·Granted Mar 27, 2012·0 cites·12 claims
- 3652US2012208336A1Semiconductor device and method for manufacturing semiconductor deviceSHIMA MASASHI·Filed 2012·Application pending·0 cites
- 3751US8735254B2Manufacture method of a high voltage MOS semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted May 27, 2014·0 cites·8 claims
- 3851US8497178B2Semiconductor device and method for making the sameSHIMA MASASHI·Filed 2012·Granted Jul 30, 2013·0 cites·10 claims
- 3951US8158498B2P-channel MOS transistor and fabrication process thereofSHIMA MASASHI·Filed 2009·Granted Apr 17, 2012·0 cites·6 claims
- 4051US2009221122A1MOS Field Effect Transistor and Manufacture Method ThereforFUJITSU MICROELECTRONICS LTD·Filed 2009·Application pending·0 cites
- 4150US8846478B2Manufacturing method of semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Sep 30, 2014·0 cites·9 claims
- 4250US2009014804A1Misfet, semiconductor device having the misfet and method of manufacturing the sameFUJITSU LTD·Filed 2008·Application pending·0 cites
- 4348US8697531B2Method for fabricating a semiconductor device having stress/strain and protrusionSHIMA MASASHI·Filed 2012·Granted Apr 15, 2014·0 cites·6 claims
- 4447US8686501B2Semiconductor device with high voltage transistorSHIMA MASASHI·Filed 2010·Granted Apr 1, 2014·0 cites·15 claims
- 4547US8329528B2Semiconductor device and method of manufacturing semiconductor deviceSHIMA MASASHI·Filed 2012·Granted Dec 11, 2012·0 cites·8 claims
- 4647US7994586B2Semiconductor device and manufacturing method of the sameFUJITSU SEMICONDUCTOR LTD·Filed 2009·Granted Aug 9, 2011·0 cites·10 claims
- 4747US6459120B1Semiconductor device and manufacturing method of the sameFUJITSU LTD·Filed 2000·Granted Oct 1, 2002·1 cites·8 claims
- 4845US8410550B2Breakdown voltage MOS semiconductor deviceSHIMA MASASHI·Filed 2010·Granted Apr 2, 2013·0 cites·9 claims
- 4944US2006172477A1MOS field effect transistor and manufacture method thereforFUJITSU LTD·Filed 2005·Application pending·0 cites
- 5043US2010237445A1Misfet, semiconductor device having the misfet and method for manufacturing the sameFUJITSU SEMICONDUCTOR LTD·Filed 2010·Application pending·0 cites
Showing the top 50 of 57 patent records by PatentIndex Score.
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