Assignee
SHIMA MASASHI
JP18 patents
Top patents by PatentIndex Score
US8106467B2Jan 31, 2012
Semiconductor device having carrier mobility raised by generating strain in channel region
SHIMA MASASHI10 citations84
US8080845B2Dec 20, 2011
Semiconductor device
SHIMA MASASHI7 citations84
US8072031B2Dec 6, 2011
P-channel MOS transistor and semiconductor integrated circuit device
SHIMA MASASHI6 citations74
US8987106B2Mar 24, 2015
Semiconductor device manufacturing method
SHIMA MASASHI2 citations63
US8603874B2Dec 10, 2013
Method of manufacturing semiconductor device
SHIMA MASASHI2 citations63
US8552511B2Oct 8, 2013
Semiconductor device and manufacturing method thereof
SHIMA MASASHI3 citations63
US8067291B2Nov 29, 2011
MOS field-effect transistor and manufacturing method thereof
SHIMA MASASHI2 citations63
US8841725B2Sep 23, 2014
Semiconductor device having channel dose region and method for manufacturing semiconductor device
SHIMA MASASHI0 citations52
US8686501B2Apr 1, 2014
Semiconductor device with high voltage transistor
SHIMA MASASHI0 citations52
US8497178B2Jul 30, 2013
Semiconductor device and method for making the same
SHIMA MASASHI0 citations52
US8329528B2Dec 11, 2012
Semiconductor device and method of manufacturing semiconductor device
SHIMA MASASHI0 citations52
US8222701B2Jul 17, 2012
P-channel MOS transistor and semiconductor integrated circuit device
SHIMA MASASHI1 citations52
US8188553B2May 29, 2012
Semiconductor device and method for making the same
SHIMA MASASHI0 citations52
US8158498B2Apr 17, 2012
P-channel MOS transistor and fabrication process thereof
SHIMA MASASHI0 citations52
US8143675B2Mar 27, 2012
Semiconductor device and method of manufacturing semiconductor device
SHIMA MASASHI0 citations52
US8410550B2Apr 2, 2013
Breakdown voltage MOS semiconductor device
SHIMA MASASHI0 citations51
US8697531B2Apr 15, 2014
Method for fabricating a semiconductor device having stress/strain and protrusion
SHIMA MASASHI0 citations42
US8735945B2May 27, 2014
Semiconductor device
SHIMA MASASHI0 citations41