Inventor · disambiguated record
Cung D. Tran
Also filed as: TRAN CUNG · TRAN CUNG D · TRAN CUNG DO
32 granted patents·3 pending applications·195 citations·filing 2008–2023
96Inventor score
Top patents by PatentIndex Score
35 records- 0196US9305835B2Formation of air-gap spacer in transistorIBM·Filed 2014·Granted Apr 5, 2016·29 cites·20 claims
- 0296US8643122B2Silicide contacts having different shapes on regions of a semiconductor deviceIBM·Filed 2012·Granted Feb 4, 2014·26 cites·9 claims
- 0396US8415250B2Method of forming silicide contacts of different shapes selectively on regions of a semiconductor deviceALPTEKIN EMRE·Filed 2011·Granted Apr 9, 2013·40 cites·9 claims
- 0495US9111962B1Selective dielectric spacer deposition for exposing sidewalls of a finFETIBM·Filed 2014·Granted Aug 18, 2015·18 cites·17 claims
- 0594US8603881B1Raised trench metal semiconductor alloy formationIBM·Filed 2012·Granted Dec 10, 2013·19 cites·20 claims
- 0692US9691658B1Contact fill in an integrated circuitGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 27, 2017·18 cites·15 claims
- 0791US9312185B2Formation of metal resistor and e-fuseIBM·Filed 2014·Granted Apr 12, 2016·11 cites·14 claims
- 0890US9349836B2Fin end spacer for preventing merger of raised active regionsIBM·Filed 2014·Granted May 24, 2016·6 cites·11 claims
- 0986US8796099B2Inducing channel strain via encapsulated silicide formationIBM·Filed 2012·Granted Aug 5, 2014·7 cites·16 claims
- 1086US8298934B2Structure and method of creating entirely self-aligned metallic contactsMAXSON JEFFERY B·Filed 2011·Granted Oct 30, 2012·8 cites·10 claims
- 1182US8236637B2Planar silicide semiconductor structureUTOMO HENRY K·Filed 2010·Granted Aug 7, 2012·7 cites·8 claims
- 1280US9530684B2Method and structure to suppress finFET heatingGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 27, 2016·2 cites·11 claims
- 1375US9331166B2Selective dielectric spacer deposition for exposing sidewalls of a finFETIBM·Filed 2014·Granted May 3, 2016·2 cites·19 claims
- 1464US9397181B2Diffusion-controlled oxygen depletion of semiconductor contact interfaceIBM·Filed 2014·Granted Jul 19, 2016·1 cites·2 claims
- 1561US8603915B2Multi-stage silicidation processALPTEKIN EMRE·Filed 2011·Granted Dec 10, 2013·1 cites·18 claims
- 1659US9679993B2Fin end spacer for preventing merger of raised active regionsIBM·Filed 2016·Granted Jun 13, 2017·0 cites·16 claims
- 1758US9601380B2Fin end spacer for preventing merger of raised active regionsIBM·Filed 2015·Granted Mar 21, 2017·0 cites·16 claims
- 1858US9515168B2Fin end spacer for preventing merger of raised active regionsIBM·Filed 2015·Granted Dec 6, 2016·0 cites·15 claims
- 1958US9391175B2Fin end spacer for preventing merger of raised active regionsIBM·Filed 2015·Granted Jul 12, 2016·0 cites·17 claims
- 2058US9368493B2Method and structure to suppress FinFET heatingGLOBALFOUNDRIES INC·Filed 2014·Granted Jun 14, 2016·0 cites·9 claims
- 2158US2024429166A1Trench isolation structures for backside contactsIBM·Filed 2023·Application pending·0 cites
- 2253US10833022B2Structure and method to improve overlay performance in semiconductor devicesGLOBALFOUNDRIES INC·Filed 2019·Granted Nov 10, 2020·0 cites·6 claims
- 2353US7964923B2Structure and method of creating entirely self-aligned metallic contactsIBM·Filed 2008·Granted Jun 21, 2011·0 cites·9 claims
- 2451US9553157B2Diffusion-controlled oxygen depletion of semiconductor contact interfaceIBM·Filed 2015·Granted Jan 24, 2017·0 cites·4 claims
- 2550US12057386B2Embedded three-dimensional electrode capacitorINTEL CORP·Filed 2020·Granted Aug 6, 2024·0 cites·20 claims
- 2650US10504851B2Structure and method to improve overlay performance in semiconductor devicesGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 10, 2019·0 cites·20 claims
- 2749US9997411B2Formation of metal resistor and e-fuseIBM·Filed 2015·Granted Jun 12, 2018·0 cites·14 claims
- 2849US8946081B2Method for cleaning semiconductor substrateALPTEKIN EMRE·Filed 2012·Granted Feb 3, 2015·0 cites·18 claims
- 2946US9472415B2Directional chemical oxide etch techniqueIBM·Filed 2014·Granted Oct 18, 2016·0 cites·11 claims
- 3046US2022416097A1Waveguide photodetectors for silicon photonic integrated circuitsINTEL CORP·Filed 2021·Application pending·0 cites
- 3143US8492275B2Method to form uniform silicide by selective implantationALPTEKIN EMRE·Filed 2011·Granted Jul 23, 2013·0 cites·14 claims
- 3243US2015008488A1Uniform height replacement metal gateST MICROELECTRONICS INC·Filed 2013·Application pending·0 cites
- 3341US8652963B2MOSFET integrated circuit with uniformly thin silicide layer and methods for its manufactureYANG BIN·Filed 2011·Granted Feb 18, 2014·0 cites·19 claims
- 3440US9059308B2Method of manufacturing dummy gates of a different material as insulation between adjacent devicesALPTEKIN EMRE·Filed 2012·Granted Jun 16, 2015·0 cites·14 claims
- 3538US9514992B2Unidirectional spacer in trench silicideIBM·Filed 2015·Granted Dec 6, 2016·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →