Inventor · disambiguated record
Viraj Y. Sardesai
Also filed as: SARDESAI VIRAJ · SARDESAI VIRAJ Y · SARDESAI VIRAJ YASHAWANT
56 granted patents·7 pending applications·522 citations·filing 1993–2019
98Inventor score
Top patents by PatentIndex Score
63 records- 0197US9496362B1Contact first replacement metal gateIBM·Filed 2016·Granted Nov 15, 2016·20 cites·17 claims
- 0296US9305835B2Formation of air-gap spacer in transistorIBM·Filed 2014·Granted Apr 5, 2016·29 cites·20 claims
- 0396US8643122B2Silicide contacts having different shapes on regions of a semiconductor deviceIBM·Filed 2012·Granted Feb 4, 2014·26 cites·9 claims
- 0496US8415250B2Method of forming silicide contacts of different shapes selectively on regions of a semiconductor deviceALPTEKIN EMRE·Filed 2011·Granted Apr 9, 2013·40 cites·9 claims
- 0595US9111962B1Selective dielectric spacer deposition for exposing sidewalls of a finFETIBM·Filed 2014·Granted Aug 18, 2015·18 cites·17 claims
- 0694US8603881B1Raised trench metal semiconductor alloy formationIBM·Filed 2012·Granted Dec 10, 2013·19 cites·20 claims
- 0793US6268299B1Variable stoichiometry silicon nitride barrier films for tunable etch selectivity and enhanced hyrogen permeabilityIBM·Filed 2000·Granted Jul 31, 2001·78 cites·19 claims
- 0892US8815693B2FinFET device formationIBM·Filed 2013·Granted Aug 26, 2014·13 cites·17 claims
- 0991US9312185B2Formation of metal resistor and e-fuseIBM·Filed 2014·Granted Apr 12, 2016·11 cites·14 claims
- 1090US9349836B2Fin end spacer for preventing merger of raised active regionsIBM·Filed 2014·Granted May 24, 2016·6 cites·11 claims
- 1188US8741718B2Local interconnects compatible with replacement gate structuresSARDESAI VIRAJ Y·Filed 2012·Granted Jun 3, 2014·10 cites·10 claims
- 1288US6504210B1Fully encapsulated damascene gates for Gigabit DRAMsIBM·Filed 2000·Granted Jan 7, 2003·48 cites·8 claims
- 1386US10043708B2Structure and method for capping cobalt contactsGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 7, 2018·4 cites·14 claims
- 1486US8796099B2Inducing channel strain via encapsulated silicide formationIBM·Filed 2012·Granted Aug 5, 2014·7 cites·16 claims
- 1585US9105614B2Local interconnects compatible with replacement gate structuresIBM·Filed 2014·Granted Aug 11, 2015·6 cites·12 claims
- 1683US6117778ASemiconductor wafer edge bead removal method and toolIBM·Filed 1998·Granted Sep 12, 2000·60 cites·9 claims
- 1782US8853700B2Cross-coupling of gate conductor line and active region in semiconductor devicesSARDESAI VIRAJ Y·Filed 2011·Granted Oct 7, 2014·6 cites·19 claims
- 1882US8435891B2Converting metal mask to metal-oxide etch stop layer and related semiconductor structureENGEL BRETT H·Filed 2011·Granted May 7, 2013·6 cites·17 claims
- 1981US9059290B2FinFET device formationIBM·Filed 2014·Granted Jun 16, 2015·4 cites·8 claims
- 2080US9647124B2Semiconductor devices with graphene nanoribbonsGLOBALFOUNDRIES INC·Filed 2016·Granted May 9, 2017·2 cites·8 claims
- 2180US9530684B2Method and structure to suppress finFET heatingGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 27, 2016·2 cites·11 claims
- 2280US9263457B2Cross-coupling of gate conductor line and active region in semiconductor devicesIBM·Filed 2014·Granted Feb 16, 2016·4 cites·12 claims
- 2379US8420491B2Structure and method for replacement metal gate field effect transistorsUTOMO HENRY K·Filed 2010·Granted Apr 16, 2013·7 cites·12 claims
- 2477US9496368B2Partial spacer for increasing self aligned contact process marginsIBM·Filed 2014·Granted Nov 15, 2016·2 cites·14 claims
- 2576US9985104B2Contact first replacement metal gateIBM·Filed 2016·Granted May 29, 2018·2 cites·7 claims
- 2675US9331166B2Selective dielectric spacer deposition for exposing sidewalls of a finFETIBM·Filed 2014·Granted May 3, 2016·2 cites·19 claims
- 2775US6057220ATitanium polycide stabilization with a porous barrierIBM·Filed 1997·Granted May 2, 2000·36 cites·11 claims
- 2872US10262996B2Third type of metal gate stack for CMOS devicesIBM·Filed 2017·Granted Apr 16, 2019·1 cites·14 claims
- 2964US9397181B2Diffusion-controlled oxygen depletion of semiconductor contact interfaceIBM·Filed 2014·Granted Jul 19, 2016·1 cites·2 claims
- 3061US10741554B2Third type of metal gate stack for CMOS devicesIBM·Filed 2019·Granted Aug 11, 2020·0 cites·19 claims
- 3161US9324709B2Self-aligned gate contact structureGLOBAL FOUNDRIES U S 2 LLC·Filed 2013·Granted Apr 26, 2016·2 cites·12 claims
- 3261US8603915B2Multi-stage silicidation processALPTEKIN EMRE·Filed 2011·Granted Dec 10, 2013·1 cites·18 claims
- 3360US10083865B2Partial spacer for increasing self aligned contact process marginsIBM·Filed 2017·Granted Sep 25, 2018·0 cites·16 claims
- 3459US9679993B2Fin end spacer for preventing merger of raised active regionsIBM·Filed 2016·Granted Jun 13, 2017·0 cites·16 claims
- 3559US6497784B1Semiconductor wafer edge bead removal method and toolIBM·Filed 1999·Granted Dec 24, 2002·20 cites·3 claims
- 3658US9601380B2Fin end spacer for preventing merger of raised active regionsIBM·Filed 2015·Granted Mar 21, 2017·0 cites·16 claims
- 3758US9515168B2Fin end spacer for preventing merger of raised active regionsIBM·Filed 2015·Granted Dec 6, 2016·0 cites·15 claims
- 3858US9391175B2Fin end spacer for preventing merger of raised active regionsIBM·Filed 2015·Granted Jul 12, 2016·0 cites·17 claims
- 3958US9368493B2Method and structure to suppress FinFET heatingGLOBALFOUNDRIES INC·Filed 2014·Granted Jun 14, 2016·0 cites·9 claims
- 4057US9929047B2Partial spacer for increasing self aligned contact process marginsIBM·Filed 2016·Granted Mar 27, 2018·0 cites·17 claims
- 4157US9318323B2Semiconductor devices with graphene nanoribbonsIBM·Filed 2013·Granted Apr 19, 2016·0 cites·19 claims
- 4255US9634006B2Third type of metal gate stack for CMOS devicesIBM·Filed 2014·Granted Apr 25, 2017·0 cites·13 claims
- 4351US9553157B2Diffusion-controlled oxygen depletion of semiconductor contact interfaceIBM·Filed 2015·Granted Jan 24, 2017·0 cites·4 claims
- 4451US8039888B2Conductive spacers for semiconductor devices and methods of formingIBM·Filed 2007·Granted Oct 18, 2011·0 cites·8 claims
- 4550US2018277427A1Structure and method for capping cobalt contactsGLOBALFOUNDRIES INC·Filed 2018·Application pending·0 cites
- 4649US9997411B2Formation of metal resistor and e-fuseIBM·Filed 2015·Granted Jun 12, 2018·0 cites·14 claims
- 4749US8946081B2Method for cleaning semiconductor substrateALPTEKIN EMRE·Filed 2012·Granted Feb 3, 2015·0 cites·18 claims
- 4848US9171800B2Electrical fuse with bottom contactsIBM·Filed 2014·Granted Oct 27, 2015·0 cites·16 claims
- 4947US5401677AMethod of metal silicide formation in integrated circuit devicesIBM·Filed 1993·Granted Mar 28, 1995·12 cites·6 claims
- 5046US9472415B2Directional chemical oxide etch techniqueIBM·Filed 2014·Granted Oct 18, 2016·0 cites·11 claims
Showing the top 50 of 63 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →