Inventor · disambiguated record
Moon-Sook Lee
Also filed as: LEE MOON-SOOK
36 granted patents·17 pending applications·395 citations·filing 2002–2013
97Inventor score
Top patents by PatentIndex Score
53 records- 0197US7292469B2Methods of programming non-volatile memory devices including transition metal oxide layer as data storage material layer and devices so operatedSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 6, 2007·63 cites·31 claims
- 0296US7420198B2Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 2, 2008·43 cites·23 claims
- 0395US7639521B2Resistive memory cells and devices having asymmetrical contactsSAMSUNG ELECCTRONICS CO LTD·Filed 2006·Granted Dec 29, 2009·62 cites·12 claims
- 0490US8330155B2Semiconductor devices having channel layer patterns on a gate insulation layerJEON SANG-HUN·Filed 2009·Granted Dec 11, 2012·18 cites·15 claims
- 0589US7535035B2Cross-point nonvolatile memory devices using binary metal oxide layer as data storage material layer and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 19, 2009·22 cites·19 claims
- 0686US7480174B2Methods of programming non-volatile memory devices including transition metal oxide layer as data storage material layer and devices so operatedSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 20, 2009·14 cites·5 claims
- 0785US8013366B2Biosensor using nanoscale material as transistor channel and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 6, 2011·14 cites·21 claims
- 0885US7741669B2Nonvolatile memory cells employing a transition metal oxide layers as a data storage material layer and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 22, 2010·10 cites·10 claims
- 0985US7348653B2Resistive memory cell, method for forming the same and resistive memory array using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 25, 2008·16 cites·30 claims
- 1084US7961496B2Resistive memory cells and devices having asymmetrical contactsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jun 14, 2011·10 cites·16 claims
- 1183US7361228B2Showerheads for providing a gas to a substrate and apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 22, 2008·15 cites·25 claims
- 1281US7790610B2Methods of manufacturing memory units, and methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 7, 2010·6 cites·20 claims
- 1380US7446333B2Nonvolatile memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 4, 2008·9 cites·11 claims
- 1480US6576941B1Ferroelectric capacitors on protruding portions of conductive plugs having a smaller cross-sectional size than base portions thereofSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jun 10, 2003·26 cites·24 claims
- 1578US8873274B2Resistive memory cells and devices having asymmetrical contactsBAEK IN-GYU·Filed 2013·Granted Oct 28, 2014·4 cites·8 claims
- 1678US7994581B2CMOS transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 9, 2011·6 cites·11 claims
- 1772US7374953B2Ferroelectric random access memories (FRAMS) having lower electrodes respectively self-aligned to node conductive layer patterns and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 20, 2008·4 cites·10 claims
- 1871US7312091B2Methods for forming a ferroelectric layer and capacitor and FRAM using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 25, 2007·10 cites·37 claims
- 1969US8022410B2Thin film transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 20, 2011·3 cites·15 claims
- 2068US6872618B2Methods of forming ferroelectric capacitors with metal oxide for inhibiting fatigueSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 29, 2005·10 cites·16 claims
- 2167US7994557B2Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Aug 9, 2011·1 cites·16 claims
- 2264US7521746B2Ferroelectric random access memories (FRAMS) having lower electrodes respectively self-aligned to node conductive layer patterns and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 21, 2009·2 cites·17 claims
- 2363US8329516B2Methods of manufacturing semiconductor devicesLEE MOON-SOOK·Filed 2012·Granted Dec 11, 2012·1 cites·4 claims
- 2462US8227303B2Methods of manufacturing CMOS transistorJEON SANG-HUN·Filed 2011·Granted Jul 24, 2012·1 cites·10 claims
- 2561US8105697B2Polymer memory device and method of forming the sameCHO BYEONG-OK·Filed 2007·Granted Jan 31, 2012·2 cites·12 claims
- 2661US7955869B2Nonvolatile memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jun 7, 2011·3 cites·11 claims
- 2760US7663141B2Organic memory devices including organic material and fullerene layersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 16, 2010·4 cites·19 claims
- 2860US6764862B2Method of forming ferroelectric random access memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jul 20, 2004·10 cites·9 claims
- 2957US2006231026A1Vapor deposition systems having separate portions configured for purging using different materialsLEE MOON-SOOK·Filed 2006·Application pending·0 cites
- 3053US8148212B2Methods of manufacturing semiconductor devicesLEE MOON-SOOK·Filed 2008·Granted Apr 3, 2012·0 cites·17 claims
- 3152US2014080211A1Multiwell plate for removing liquid and cell culture method using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 3249US6858443B2Methods of forming ferroelectric capacitors on protruding portions of conductive plugs having a smaller cross-sectional size than base portions thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 22, 2005·3 cites·21 claims
- 3349US2005011444A1Vapor deposition systems having separate portions configured for purging using different materials and methods of operating sameFiled 2004·Application pending·0 cites
- 3448US8586427B2Thin film transistors and methods of manufacturing thin film transistorsJEON SANG-HUN·Filed 2011·Granted Nov 19, 2013·0 cites·11 claims
- 3547US6987308B2Ferroelectric capacitors with metal oxide for inhibiting fatigueSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 17, 2006·1 cites·9 claims
- 3647US2009209071A1Methods of manufacturing semiconductor devicesSAMSUNG ELECRONICS CO LTD·Filed 2009·Application pending·0 cites
- 3746US7067329B2Methods of forming ferroelectric memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jun 27, 2006·2 cites·25 claims
- 3845US2010123201A1Semiconductor DevicesJEON SANG-HUN·Filed 2009·Application pending·0 cites
- 3945US2010085112A1Method of Manufacturing a Transistor, and Method of Controlling a Threshold Voltage of the TransistorJEON SANG-HUN·Filed 2009·Application pending·0 cites
- 4044US8338815B2Memory units and related semiconductor devices including nanowiresLEE MOON-SOOK·Filed 2010·Granted Dec 25, 2012·0 cites·6 claims
- 4144US2011204314A1Resistive memory cells and devices having asymmetrical contactsSAMSUNG ELECTRONICS CO LTD·Filed 2011·Application pending·0 cites
- 4244US2004163597A1Apparatus for fabricating semiconductor devices, heating arrangement, shower head arrangement, method of reducing thermal disturbance during fabrication of a semiconductor device, and method of exchanging heat during fabrication of a semiconductor deviceFiled 2004·Application pending·0 cites
- 4343US2009189152A1Ferroelectric memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 4443US2006183252A1Ferroelectric memory devicesLEE MOON-SOOK·Filed 2006·Application pending·0 cites
- 4543US2014106394A1Multiwell plate and method of analyzing target material using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 4641US2009302302A1Metal oxide resistive memory and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 4738US8247797B2Field-effect transistor and sensor based on the sameHONG SEUNG HUN·Filed 2010·Granted Aug 21, 2012·0 cites·19 claims
- 4838US2006263289A1Metal oxide resistive memory and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4937US7038262B2Integrated circuit devices including an intaglio patternSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 2, 2006·0 cites·11 claims
- 5037US2010200831A1Non-volatile memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
Showing the top 50 of 53 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →