Inventor · disambiguated record
Ing-Ruey Liaw
Also filed as: LIAW ING-RUEY
33 granted patents·3 pending applications·1,186 citations·filing 1994–2007
98Inventor score
Top patents by PatentIndex Score
36 records- 0196US5792687AMethod for fabricating high density integrated circuits using oxide and polysilicon spacersVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Aug 11, 1998·148 cites·23 claims
- 0291US6017614APlasma-enhanced chemical vapor deposited SIO2 /SI3 N4 multilayer passivation layer for semiconductor applicationsVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Jan 25, 2000·70 cites·4 claims
- 0390US5956587AMethod for crown type capacitor in dynamic random access memoryVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Sep 21, 1999·76 cites·12 claims
- 0489US5851603AMethod for making a plasma-enhanced chemical vapor deposited SiO2 Si3 N4 multilayer passivation layer for semiconductor applicationsVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Dec 22, 1998·59 cites·18 claims
- 0589US5710073AMethod for forming interconnections and conductors for high density integrated circuitsVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Jan 20, 1998·67 cites·24 claims
- 0687US6476437B2Crown or stack capacitor with a monolithic fin structureVANGUARD INT SEMICONDUCT CORP·Filed 2001·Granted Nov 5, 2002·33 cites·16 claims
- 0787US6136643AMethod for fabricating capacitor-over-bit-line dynamic random access memory (DRAM) using self-aligned contact etching technologyVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Oct 24, 2000·76 cites·22 claims
- 0886US6344392B1Methods of manufacture of crown or stack capacitor with a monolithic fin structure made with a different oxide etching rate in hydrogen fluoride vaporVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Feb 5, 2002·53 cites·18 claims
- 0979US5874359ASmall contacts for ultra large scale integration semiconductor devices without separation ground ruleIND TECH RES INST·Filed 1997·Granted Feb 23, 1999·65 cites·12 claims
- 1078US6008085ADesign and a novel process for formation of DRAM bit line and capacitor node contactsVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Dec 28, 1999·39 cites·23 claims
- 1178US5712202AMethod for fabricating a multiple walled crown capacitor of a semiconductor deviceVANGUARD INT SEMICONDUCT CORP·Filed 1995·Granted Jan 27, 1998·62 cites·13 claims
- 1276US5763312AMethod of fabricating LDD spacers in MOS devices with double spacers and device manufactured therebyVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Jun 9, 1998·43 cites·22 claims
- 1371US5543345AMethod for fabricating crown capacitors for a dram cellVANGUARD INT SEMICONDUCT CORP·Filed 1995·Granted Aug 6, 1996·34 cites·22 claims
- 1470US6555433B2Method of manufacture of a crown or stack capacitor with a monolithic fin structure made with a different oxide etching rate in hydrogen fluoride vaporVANGUARD INT SEMICONDUCT CORP·Filed 2001·Granted Apr 29, 2003·12 cites·7 claims
- 1569US5905293ALDD spacers in MOS devices with double spacersVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted May 18, 1999·33 cites·17 claims
- 1668US5837576AMethod for forming a capacitor using a silicon oxynitride etching stop layerVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Nov 17, 1998·30 cites·8 claims
- 1767US6168987B1Method for fabricating crown-shaped capacitor structuresVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Jan 2, 2001·27 cites·11 claims
- 1864US6133599ADesign and a novel process for formation of DRAM bit line and capacitor node contactsVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Oct 17, 2000·25 cites·4 claims
- 1962US6171929B1Shallow trench isolator via non-critical chemical mechanical polishingVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Jan 9, 2001·30 cites·20 claims
- 2061US6277719B1Method for fabricating a low resistance Poly-Si/metal gateVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Aug 21, 2001·28 cites·19 claims
- 2161US6008075AMethod for simultaneous formation of contacts between metal layers and fuse windows in semiconductor manufacturingVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Dec 28, 1999·34 cites·18 claims
- 2261US5998279AManufacture of a shallow trench isolation device by exposing negative photoresist to increased exposure energy and chemical mechanical planarizationVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Dec 7, 1999·26 cites·7 claims
- 2360US5480837AProcess of making an integrated circuit having a planar conductive layerIND TECH RES INST·Filed 1994·Granted Jan 2, 1996·36 cites·14 claims
- 2456US5923973AMethod of making greek letter psi shaped capacitor for DRAM circuitsVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Jul 13, 1999·15 cites·20 claims
- 2554US7589990B2Semiconductor ROM device and manufacturing method thereofTAIWAN IMAGINGTEK CORP·Filed 2004·Granted Sep 15, 2009·8 cites·5 claims
- 2654US5491104AMethod for fabricating DRAM cells having fin-type stacked storage capacitorsIND TECH RES INST·Filed 1994·Granted Feb 13, 1996·16 cites·23 claims
- 2752US6351037B1Method for making polycide-to-polycide low contact resistance contacts for interconnections on integrated circuitsVANGUARD INT SEMICONDUCT CORP·Filed 2000·Granted Feb 26, 2002·3 cites·2 claims
- 2848US6087253AMethod of forming landing plugs for PMOS and NMOSVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Jul 11, 2000·11 cites·18 claims
- 2946US6239014B1Tungsten bit line structure featuring a sandwich capping layerVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted May 29, 2001·12 cites·21 claims
- 3042US6249018B1Fabrication method to approach the conducting structure of a DRAM cell with straightforward bit lineVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Jun 19, 2001·8 cites·5 claims
- 3142US2008135915A1Non-volatile memory and method of fabricating the sameVANGUARD INT SEMICONDUCT CORP·Filed 2007·Application pending·0 cites
- 3238US6762096B1Method for forming a polysilicon spacer with a vertical profileVANGUARD INT SEMICONDUCT CORP·Filed 2003·Granted Jul 13, 2004·3 cites·9 claims
- 3335US6150247AMethod for making polycide-to-polycide low contact resistance contacts for interconnections on integrated circuitsVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Nov 21, 2000·4 cites·7 claims
- 3434US7129134B2Fabrication method for flash memory source line and flash memoryVANGUARD INT SEMICONDUCT CORP·Filed 2004·Granted Oct 31, 2006·0 cites·21 claims
- 3530US2001010958A1Fabrication method to approach the conducting structure of a dram cell with straight forward bit lineVANGUARD INT SEMICONDUCT CORP·Filed 2001·Application pending·0 cites
- 3629US2002132403A1Method of fabricating a self-align contact with a disposable spacerFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →