Inventor · disambiguated record
Yukie Nishikawa
Also filed as: NISHIKAWA YUKIE
50 granted patents·7 pending applications·1,905 citations·filing 1989–2022
98Inventor score
Top patents by PatentIndex Score
57 records- 0198US5864171ASemiconductor optoelectric device and method of manufacturing the sameTOSHIBA KK·Filed 1996·Granted Jan 26, 1999·161 cites·18 claims
- 0298US5696389ALight-emitting semiconductor deviceTOSHIBA KK·Filed 1995·Granted Dec 9, 1997·623 cites·21 claims
- 0397US7560767B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2006·Granted Jul 14, 2009·64 cites·20 claims
- 0495US8618551B2Semiconductor light emitting deviceNISHIKAWA YUKIE·Filed 2011·Granted Dec 31, 2013·43 cites·13 claims
- 0594US5821555ASemicoductor device having a hetero interface with a lowered barrierTOSHIBA KK·Filed 1996·Granted Oct 13, 1998·283 cites·4 claims
- 0693US7091561B2Field effect transistor and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted Aug 15, 2006·69 cites·15 claims
- 0793US5153889ASemiconductor light emitting deviceTOSHIBA KK·Filed 1991·Granted Oct 6, 1992·140 cites·10 claims
- 0889US5048035ASemiconductor light emitting deviceTOSHIBA KK·Filed 1990·Granted Sep 10, 1991·94 cites·14 claims
- 0985US5488233ASemiconductor light-emitting device with compound semiconductor layerTOSHIBA KK·Filed 1994·Granted Jan 30, 1996·66 cites·24 claims
- 1084US6914312B2Field effect transistor having a MIS structure and method of fabricating the sameTOSHIBA KK·Filed 2003·Granted Jul 5, 2005·34 cites·20 claims
- 1183US9741838B2Semiconductor deviceTOSHIBA KK·Filed 2016·Granted Aug 22, 2017·4 cites·20 claims
- 1283US7902588B2Nonvolatile semiconductor memory device and method for manufacturing the sameTOSHIBA KK·Filed 2007·Granted Mar 8, 2011·10 cites·20 claims
- 1382US9947574B2Semiconductor deviceTOSHIBA KK·Filed 2015·Granted Apr 17, 2018·4 cites·12 claims
- 1480US6080599ASemiconductor optoelectric device and method of manufacturing the sameTOSHIBA KK·Filed 1998·Granted Jun 27, 2000·37 cites·21 claims
- 1576US8969157B2Method of manufacturing semiconductor device having field plate electrodeTOSHIBA KK·Filed 2013·Granted Mar 3, 2015·4 cites·12 claims
- 1676US7755136B2Nonvolatile semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Jul 13, 2010·6 cites·26 claims
- 1775US5282218ASemiconductor laser deviceTOSHIBA KK·Filed 1992·Granted Jan 25, 1994·33 cites·20 claims
- 1873US9224916B2Semiconductor light emitting deviceYAMASAKI HIRONORI·Filed 2012·Granted Dec 29, 2015·2 cites·18 claims
- 1973US8772809B2Semiconductor light emitting deviceFURUKI KATSUYOSHI·Filed 2012·Granted Jul 8, 2014·3 cites·17 claims
- 2072US7550801B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2006·Granted Jun 23, 2009·4 cites·7 claims
- 2170US8530913B2Light emitting deviceNISHIKAWA YUKIE·Filed 2011·Granted Sep 10, 2013·2 cites·15 claims
- 2269US6787433B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2002·Granted Sep 7, 2004·13 cites·13 claims
- 2369US5585649ACompound semiconductor devices and methods of making compound semiconductor devicesTOSHIBA KK·Filed 1995·Granted Dec 17, 1996·44 cites·19 claims
- 2467US7115953B2Semiconductor device and method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2005·Granted Oct 3, 2006·2 cites·18 claims
- 2565US8674384B2Light emitting elementKATAOKA TAKASHI·Filed 2011·Granted Mar 18, 2014·1 cites·13 claims
- 2664US7756736B2Working machine management systemKOMATSU MFG CO LTD·Filed 2004·Granted Jul 13, 2010·14 cites·3 claims
- 2764US5058120AVisible light emitting semiconductor laser with inverse mesa-shaped groove sectionTOSHIBA KK·Filed 1990·Granted Oct 15, 1991·21 cites·16 claims
- 2864US4922499ASemiconductor laser device and the manufacturing method thereofTOSHIBA KK·Filed 1989·Granted May 1, 1990·18 cites·10 claims
- 2963US6072203ASemiconductor deviceTOSHIBA KK·Filed 1998·Granted Jun 6, 2000·23 cites·20 claims
- 3062US5321712ASemiconductor light-emitting device having a cladding layer composed of an InGaAlp-based compoundTOSHIBA KK·Filed 1993·Granted Jun 14, 1994·21 cites·30 claims
- 3158US12191266B2Semiconductor device and manufacturing method of semiconductor deviceTOSHIBA KK·Filed 2022·Granted Jan 7, 2025·0 cites·20 claims
- 3255US5034957ASemiconductor laser deviceTOSHIBA KK·Filed 1989·Granted Jul 23, 1991·13 cites·22 claims
- 3355US2016056335A1Semiconductor light emitting deviceTOSHIBA KK·Filed 2015·Application pending·0 cites
- 3453US9853023B2Semiconductor device and semiconductor packageTOSHIBA KK·Filed 2017·Granted Dec 26, 2017·0 cites·12 claims
- 3552US7405451B2Semiconductor device including MIS transistorsTOSHIBA KK·Filed 2004·Granted Jul 29, 2008·4 cites·4 claims
- 3651US9570439B2Semiconductor device and semiconductor packageTOSHIBA KK·Filed 2015·Granted Feb 14, 2017·0 cites·13 claims
- 3751US7968933B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2009·Granted Jun 28, 2011·0 cites·10 claims
- 3850US9991418B2Semiconductor light emitting elementTOSHIBA KK·Filed 2016·Granted Jun 5, 2018·0 cites·6 claims
- 3950US5202895ASemiconductor device having an active layer made of ingaalp materialTOSHIBA KK·Filed 1991·Granted Apr 13, 1993·12 cites·11 claims
- 4050US2009011537A1Semiconductor device and method for manufacturing sameTOSHIBA KK·Filed 2008·Application pending·0 cites
- 4149US5305341ASemiconductor laser whose active layer has an ordered structureTOSHIBA KK·Filed 1992·Granted Apr 19, 1994·12 cites·19 claims
- 4248US7015121B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted Mar 21, 2006·2 cites·5 claims
- 4348US4987097AMethod of manufacturing a semiconductor laser deviceTOSHIBA KK·Filed 1990·Granted Jan 22, 1991·11 cites·7 claims
- 4447US9287448B2Semiconductor light emitting elementYAMASAKI HIRONORI·Filed 2011·Granted Mar 15, 2016·0 cites·10 claims
- 4546US11817476B2Semiconductor deviceTOSHIBA KK·Filed 2021·Granted Nov 14, 2023·0 cites·14 claims
- 4646US9041143B2Semiconductor devicesTOSHIBA KK·Filed 2013·Granted May 26, 2015·0 cites·11 claims
- 4746US8519411B2Semiconductor light emitting deviceNISHIKAWA YUKIE·Filed 2008·Granted Aug 27, 2013·0 cites·7 claims
- 4846US7538013B2Method of manufacturing a field effect transistor comprising an insulating film including metal oxide having crystallinity and different in a lattice distance from semiconductor substrateTOSHIBA KK·Filed 2006·Granted May 26, 2009·0 cites·16 claims
- 4945US2015262813A1Semiconductor deviceTOSHIBA KK·Filed 2014·Application pending·0 cites
- 5044US11985897B2Semiconductor deviceTOSHIBA KK·Filed 2021·Granted May 14, 2024·0 cites·25 claims
Showing the top 50 of 57 patent records by PatentIndex Score.
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