Semiconductor light emitting device

Abstract

According to an embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a dielectric film and an electrode. The first semiconductor layer is capable of emitting light. The second semiconductor layer has a first major surface in contact with the first semiconductor layer and a second major surface opposite to the first major surface, the second major surface including a first region having convex structures and a second region not having the convex structures. The dielectric film is provided at least at a tip portion of the convex structures, and the electrode is provided above the second region.

What is claimed is: 
     
         1 . A semiconductor light emitting device comprising:
 a first semiconductor layer capable of emitting light;   a second semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a first major surface, a second major surface opposite to the first major surface and a side surface, the second major surface including a plurality of protrusions provided with a first side wall, wherein   the first side wall intersects with a crystal growth plane parallel to the first major surface, and a first internal angle inside the protrusions between the first side wall and the crystal growth plane is more than 90 degrees;   a dielectric film provided on the protrusions and the side surface of the second semiconductor layer; and   an electrode provided above the second major surface, the electrode being apart from the dielectric film.   
     
     
         2 . The device according to  claim 1 , further comprising:
 a third semiconductor layer in contact with the first semiconductor layer, opposite to the second semiconductor layer across the first semiconductor layer and having different conductivity type from the second semiconductor layer, wherein   each of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer includes one of compounds with compositions represented by   In x (AlGa 1-y ) 1-x P (0≦x≦1, 0≦y≦1),   Al x Ga 1-x As (0≦x≦1), and   In x Ga 1-x As y P 1-y  (0≦x≦1, 0≦y≦1).   
     
     
         3 . The device according to  claim 1 , wherein the protrusions have a second side wall intersecting with the crystal growth plane, and the first side wall faces a second internal angle between the second side wall and the crystal growth plane that is 35 degrees or more and 45 degrees or less. 
     
     
         4 . The device according to  claim 3 , wherein the dielectric film is provided at least on the second side wall. 
     
     
         5 . The device according to  claim 1 , wherein the dielectric film is provided on entire surfaces of the protrusions. 
     
     
         6 . The device according to  claim 1 , wherein the dielectric film includes at least one material selected from silicon dioxide, silicon nitride, and silicon oxynitride. 
     
     
         7 . The device according to  claim 1 , wherein the dielectric film includes at least two films selected from silicon dioxide film, silicon nitride film, and silicon oxynitride film. 
     
     
         8 . The device according to  claim 1 , further comprising:
 a resin covering the protrusions and the dielectric film, wherein refractive index N 1  of the second semiconductor layer, refractive index N 2  of the dielectric film, and refractive index N 3  of the resin satisfy the following relation.
   N 1 >N 2 >N 3    
   
     
     
         9 . The device according to  claim 1 , further comprising:
 a resin covering the protrusions and the dielectric film,   wherein refractive index N 1  of the second semiconductor layer, refractive index N 2  of the dielectric film, and refractive index N 3  of the resin satisfy the following relation.
   N 1 >N 2  and N 2 <N 3    
   
     
     
         10 . The device according to  claim 1 , wherein a maximum thickness of the dielectric film is between 50 nm and 500 nm. 
     
     
         11 . The device according to  claim 1 , the second major surface includes one of the crystal growth planes tilted from a {100} plane with an angle between 10 degrees and 20 degrees. 
     
     
         12 . The device according to  claim 11 , wherein the second major surface is tilted from the {100} plane toward a (111) group III plane or a (111) group V plane. 
     
     
         13 . The device according to  claim 1 , wherein the dielectric film covers an outer periphery of the electrode. 
     
     
         14 . The device according to  claim 13 , further comprising:
 a narrow wire electrode extending along the second major surface from the electrode,   wherein the dielectric film covers the narrow wire electrode.   
     
     
         15 . The device according to  claim 2 , further comprising:
 a support structure provided on a side of the third semiconductor layer opposite to the first semiconductor layer, and supporting the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer; and   a reflection layer provided between the third semiconductor layer and the support structure, and reflecting light emitted from the first semiconductor layer toward the second semiconductor layer.   
     
     
         16 . The device according to  claim 15 , wherein a current blocking layer is selectively provided below the electrode, and formed between the third semiconductor layer and the reflection layer.