Semiconductor device and method for manufacturing same

Abstract

The present invention is to obtain an MIS transistor which allows considerable reduction in threshold fluctuation for each transistor and has a low threshold voltage. First gate electrode material for nMIS and second gate electrode material for pMIS can be mutually converted to each other, so that a process can be simplified. Such a fact that a dependency of a work function on a doping amount is small is first disclosed, so that fluctuation in threshold voltage for each transistor hardly occurs.

1 .- 5 . (canceled) 
   
   
       6 . A method for manufacturing a semiconductor device comprising:
 forming first electrode material films with a first conductivity type on first and second regions on a semiconductor substrate;   introducing material that transform the first conductivity type to a second conductivity type into the first electrode material film on the second region to reform the first electrode material film on the second region to a second electrode material film with the second conductivity type; and   patterning the first and second electrode material films to form a first gate electrode on the first region and form a second gate electrode on the second region.   
   
   
       7 . The method for manufacturing a semiconductor device according to  claim 6 , further comprising, after the first electrode material film is formed and before reforming to the second electrode material film is performed, causing the semiconductor substrate and the first electrode material film to react with each other to form a gate insulating film between the semiconductor substrate and the first electrode material by performing anneal in predetermined atmosphere. 
   
   
       8 . The method for manufacturing a semiconductor device according to  claim 6 , wherein one of the first and second gate electrodes includes a first electrically conductive oxide film where a work function (eV) is in a range of 3.65≦Φm≦4.45, and
 the other of the first and second gate electrodes includes a second electrically conductive oxide film where a work function (eV) is in a range of 4.77≦Φm≦5.57.   
   
   
       9 . The method for manufacturing a semiconductor device according to  claim 8 , wherein one of the first and second gate electrodes includes a first electrically conductive oxide film comprising a Perovskite structure type oxide represented by ABO 3  or a Perovskite structure type oxynitride represented by ABON, where A is at least one element selected from an A 1  or A 2  group, and B is at least one element selected from a B 1  or B 2  group, and the A 1  group being alkaline earth metals and rare earth metals, the A 2  group being La and Y, the B 1  group is constituted of Ti, Zr, Hf, and Ce, and the B 2  group is being Ta, Nb, and V, and
 the first electrically conductive oxide film including at least one element selected from the A 2  group or the B 2  group, and wherein   the other of the first and second gate electrodes includes a second electrically conductive oxide film comprising a Perovskite structure type oxide represented by CDO 3  or a Perovskite structure type oxynitride represented by CDON, where C is at least one element selected from a C 1  or C 2  group, and D is at least one element selected from a D 1  or D 2  group, the C 1  group being alkaline earth metals and rare earth metals, the C 2  group being La and Y, the D 1  group being Ti, Zr, Hf, and Ce, and the D 2  group being W, Mo, Cr, Re, Tc, Mn, Os, Ru, Fe, Ir, Rh, Co, Pt, Pd, and Ni.   
   
   
       10 . The method for manufacturing a semiconductor device according to  claim 6 ,
 wherein one of the first and second gate electrodes includes a first electrically conductive oxide film comprising a rutile structure type oxide represented by AO 2  or a rutile structure type oxynitride represented by AON, and the where A includes at least one element selected from an A 1  group and at least one element selected from an A 2  group, the A 1  group being Ti, Zr, Hf, and Ce, and the A 2  group is constituted of Ta, Nb, and V, and   wherein the other of the first and second gate electrodes includes a second conductive oxide film comprising a rutile structure type oxide represented by XO 2  or a rutile structure type oxynitride represented by XON, where X includes at least one element selected from an X 1  or X 2  group, the X 1  group being of Ti, Zr, Hf, and Ce, and the X 2  group being W, Mo, Cr, Re, Tc, Mn, Os, Ru, Fe, Ir, Rh, Co, Pt, Pd, and Ni.   
   
   
       11 . A method for manufacturing a semiconductor device comprising:
 stacking a dummy insulating film and a dummy electrode material film on a first region and a second region of a semiconductor substrate, respectively;   patterning the dummy electrode material film and the dummy insulating film to a dummy gate electrode and a dummy insulating film on the first and second regions;   forming insulating films on side portions of the dummy gate electrode and dummy gate insulating film on the first and the second regions;   removing the dummy gate electrode and dummy gate insulating film to form first and second gate grooves on the first and the second regions;   forming gate insulating films on at least bottom faces of the first and second gate grooves;   embedding first electrode material films with a first conductivity type in the first and second gate grooves to form first gate electrodes covering the gate insulating films; and   introducing material that transform the first conductivity type to a second conductivity type into the first gate electrode on the second region to reform the first gate electrode on the second region to a second gate electrode with the second conductivity type.   
   
   
       12 . The method for manufacturing a semiconductor device according to  claim 11 , wherein one of the first and second gate electrodes includes a first electrically conductive oxide film where a work function (eV) is in a range of 3.65≦Φm≦4.45, and
 the other of the first and second gate electrodes includes a second electrically conductive oxide film where a work function (eV) is in a range of 4.77≦Φm≦5.57.   
   
   
       13 . The method for manufacturing a semiconductor device according to  claim 11 ,
 wherein one of the first and second gate electrodes includes a first electrically conductive oxide film comprising a Perovskite structure type oxide represented by ABO 3  or a Perovskite structure type oxynitride represented by ABOn, where A is at least one element selected from an A 1  or A 2  group, and B is least one element selected from a B 1  or B 2  group, the A 1  group being alkaline earth metals and rare earth metals, the A 2  group being La and Y, the B 1  group being Ti, Zr, Hf, and Ce, and the B 2  group being Ta, Nb, and V, and   the first electrically conductive oxide film including at least one element selected from the A 2  group or the B 2  group,   and wherein the other of the first and second gate electrodes includes a second electrically conductive oxide film comprising a Perovskite structure type oxide represented by CDO 3 , or a Perovskite structure type oxynitride represented by CDON, where C is at least one element selected from a C 1  or C 2  group, and D is at least one element selected from a D 1  or D 2  group, the C 1  group being alkaline earth metals and rare earth metals, the C 2  group being La and Y, the D 1  group being Ti, Zr, Hf, and Ce, and the D 2  group being W, Mo, Cr, Re, Tc, Mn, Os, Ru, Fe, Ir, Rh, Co, Pt, Pd, and Ni.   
   
   
       14 . The method for manufacturing a semiconductor device according to  claim 11 ,
 wherein one of the first and second gate electrodes includes a first electrically conductive oxide film comprising a rutile structure type oxide represented by AO 2  or a rutile structure type oxynitride represented by AON, where A includes at least one element selected from an A 1  group and at least one element selected from an A 2  group, the A 1  group being Ti, Zr, Hf, and Ce, and the A 2  group is constituted of being Ta, Nb, and V,   and wherein the other of the first and second gate electrodes includes a second electrically conductive oxide film comprising a rutile structure type oxide represented by XO 2  or a rutile structure type oxynitride represented by XON, where X includes at least one element selected from an X 1  or X 2  group, the X 1  group being Ti, Zr, Hf, and Ce, and the X 2  group being W, Mo, Cr, Re, Tc, Mn, Os, Ru, Fe, Ir, Rh, Co, Pt, Pd, and Ni.   
   
   
       15 . A method for manufacturing a semiconductor device comprising:
 stacking a dummy insulating film and a dummy electrode material film on a first region and a second region of a semiconductor substrate, respectively;   patterning the dummy electrode material film and the dummy insulating film to a dummy gate electrode and a dummy insulating film on the first and second regions;   forming insulating films on side portions of the dummy gate electrode and dummy gate insulating film on the first and the second regions;   removing the dummy gate electrode and dummy gate insulating film to form first and second gate grooves on the first and the second regions;   embedding first electrode material films with a first conductivity type in the first and second gate grooves to form first gate electrodes;   causing the semiconductor substrate and the first gate electrodes to react with each other to form a gate insulating films between the semiconductor substrate and the first gate electrodes by performing anneal in predetermined atmosphere; and   introducing material that transform the first conductivity type to a second conductivity type into the first gate electrode on the second region to reform the first gate electrode on the second region to a second gate electrode with the second conductivity type.   
   
   
       16 . The method for manufacturing a semiconductor device according to  claim 15 , wherein one of the first and second gate electrodes includes a first electrically conductive oxide film where a work function (eV) is in a range of 3.65≦Φm≦4.45, and
 the other of the first and second gate electrodes includes a second electrically conductive oxide film where a work function (eV) is in a range of 4.77≦Φm≦5.57.   
   
   
       17 . The method for manufacturing a semiconductor device according to  claim 15 ,
 wherein one of the first and second gate electrodes includes a first electrically conductive oxide film comprising a Perovskite structure type oxide represented by ABO 3  or a Perovskite structure type oxynitride represented by ABON, where A is at least one element selected from an A 1  or A 2  group, and B is at least one element selected from a B 1  or a B 2  group, the A 1  group being alkaline earth metals and rare earth metals, the A 2  group being La and Y, the B 1  group being Ti, Zr, Hf, and Ce, and the B 2  group being Ta, Nb, and V, and   the first electrically conductive oxide film including at least one element selected from the A 2  group or the B 2  group,   and wherein the other of the first and second gate electrodes includes a second electrically conductive oxide film comprising a Perovskite structure type oxide represented by CDO 3  or a Perovskite structure type oxynitride represented by CDON, where C is at least one element selected a C 1  or C 2  group, D is at least one element selected from a D 1  or D 2  group, the C 1  group being alkaline earth metals and rare earth metals, the C 2  group being La and Y, the D 1  group being Ti, Zr, Hf, and Ce, and the D 2  group being W, Mo, Cr, Re, Tc, Mn, Os, Ru, Fe, Ir, Rh, Co, Pt, Pd, and Ni.   
   
   
       18 . The method for manufacturing a semiconductor device according to  claim 15 ,
 wherein one of the first and second gate electrodes includes a first electrically conductive oxide film comprising a rutile structure type oxide represented by AO 2  or a rutile structure type oxynitride represented by AON, where A includes at least one element selected from an A 1  group and at least one element selected from an A 2  group, the A 1  group being Ti, Zr, Hf, and Ce, and the A 2  group being Ta, Nb, and V,   and wherein the other of the first and second gate electrodes includes a second electrically conductive oxide film comprising a rutile structure type oxide represented by XO 2  or a rutile structure type oxynitride represented by XON, where X includes at least one element selected from an X 1  or X 2  group, the X 1  group being Ti, Zr, Hf, and Ce, and the X 2  group being W, Mo, Cr, Re, Tc, Mn, Os, Ru, Fe, Ir, Rh, Co, Pt, Pd, and Ni.