Inventor · disambiguated record
Reima Laaksonen
Also filed as: LAAKSONEN REIMA · LAAKSONEN REIMA T · LAAKSONEN REIMA TAPANI
17 granted patents·4 pending applications·302 citations·filing 1998–2011
94Inventor score
Top patents by PatentIndex Score
21 records- 0190US6624068B2Polysilicon processing using an anti-reflective dual layer hardmask for 193 nm lithographyTEXAS INSTRUMENTS INC·Filed 2001·Granted Sep 23, 2003·64 cites·15 claims
- 0286US6362111B1Tunable gate linewidth reduction processTEXAS INSTRUMENTS INC·Filed 1999·Granted Mar 26, 2002·88 cites·14 claims
- 0385US6866974B2Semiconductor process using delay-compensated exposureTEXAS INSTRUMENTS INC·Filed 2002·Granted Mar 15, 2005·24 cites·7 claims
- 0481US7393787B2Formation of nitrogen containing dielectric layers having a uniform nitrogen distribution therein using a high temperature chemical treatmentTEXAS INSTRUMENTS INC·Filed 2005·Granted Jul 1, 2008·9 cites·11 claims
- 0580US6803661B2Polysilicon processing using an anti-reflective dual layer hardmask for 193 nm lithographyTEXAS INSTRUMENTS INC·Filed 2003·Granted Oct 12, 2004·23 cites·3 claims
- 0678US6762130B2Method of photolithographically forming extremely narrow transistor gate elementsTEXAS INSTRUMENTS INC·Filed 2002·Granted Jul 13, 2004·23 cites·15 claims
- 0777US7435651B2Method to obtain uniform nitrogen profile in gate dielectricsTEXAS INSTRUMENTS INC·Filed 2005·Granted Oct 14, 2008·6 cites·18 claims
- 0875US7459390B2Method for forming ultra thin low leakage multi gate devicesTEXAS INSTRUMENTS INC·Filed 2006·Granted Dec 2, 2008·6 cites·19 claims
- 0973US8802577B2Method for manufacturing a semiconductor device using a nitrogen containing oxide layerNIIMI HIROAKI·Filed 2011·Granted Aug 12, 2014·3 cites·17 claims
- 1065US6482688B2Utilizing amorphorization of polycrystalline structures to achieve T-shaped MOSFET gateTEXAS INSTRUMENTS INC·Filed 2001·Granted Nov 19, 2002·14 cites·28 claims
- 1160US7670913B2Method for forming ultra-thin low leakage multiple gate devices using a masking layer over the semiconductor substrateTEXAS INSTRUMENTS INC·Filed 2006·Granted Mar 2, 2010·2 cites·32 claims
- 1253US6214736B1Silicon processing methodTEXAS INSTRUMENTS INC·Filed 1999·Granted Apr 10, 2001·20 cites·3 claims
- 1349US6737325B1Method and system for forming a transistor having source and drain extensionsTEXAS INSTRUMENTS INC·Filed 2003·Granted May 18, 2004·2 cites·21 claims
- 1449US2008315324A1Method to obtain uniform nitrogen profile in gate dielectricsTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 1548US8492291B2Formation of gate dielectrics with uniform nitrogen distributionNIIMI HIROAKI·Filed 2011·Granted Jul 23, 2013·0 cites·22 claims
- 1648US6582973B1Method for controlling a semiconductor manufacturing processTEXAS INSTRUMENTS INC·Filed 2002·Granted Jun 24, 2003·5 cites·13 claims
- 1748US6087220AStack etch method for flash memory devicesTEXAS INSTRUMENTS INC·Filed 1998·Granted Jul 11, 2000·12 cites·14 claims
- 1848US2007066021A1Formation of gate dielectrics with uniform nitrogen distributionTEXAS INSTRUMENTS INC·Filed 2005·Application pending·0 cites
- 1945US2007196970A1Method for manufacturing a semiconductor device using a nitrogen containing oxide layerTEXAS INSTRUMENTS INC·Filed 2006·Application pending·0 cites
- 2042US7799649B2Method for forming multi gate devices using a silicon oxide masking layerTEXAS INSTRUMENTS INC·Filed 2006·Granted Sep 21, 2010·1 cites·20 claims
- 2134US2002072225A1Hard-mask etch processFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →