Method for manufacturing a semiconductor device using a nitrogen containing oxide layer

Abstract

The present invention provides a method for forming a semiconductor device, as well as a semiconductor device. The method for manufacturing a semiconductor device, among others, includes providing a gate structure over a substrate, the gate structure including a gate electrode located over a nitrided gate dielectric, and forming a nitrided region over a sidewall of the nitrided gate dielectric.

1 . A method for manufacturing a semiconductor device, comprising: 
 providing a gate structure over a substrate, the gate structure including a gate electrode located over a nitrided gate dielectric; and    forming a nitride region in a sidewall of the nitrided gate dielectric.    
   
   
       2 . The method as recited in  claim 1  wherein forming a nitride region includes subjecting the sidewall to a nitrogen containing plasma.  
   
   
       3 . The method as recited in  claim 2  wherein the nitrogen containing plasma uses an RF plasma or a microwave plasma.  
   
   
       4 . The method as recited in  claim 1  wherein forming a nitride region in the sidewall further includes forming a nitride region in sidewalls of the gate electrode.  
   
   
       5 . The method as recited in  claim 1  further including subjecting the nitride region to a reoxidation step prior to forming a nitrogen containing oxide layer thereover.  
   
   
       6 . The method as recited in  claim 5  wherein the reoxidation step uses a temperature ranging from about 400° C. to about 600° C. for a time period ranging from about 30 seconds to about 60 seconds.  
   
   
       7 . The method as recited in  claim 1  further including forming a nitrogen containing oxide layer over the nitride region.  
   
   
       8 . The method as recited in  claim 7  wherein forming the nitrogen containing oxide layer includes forming the nitrogen containing oxide layer by the oxynitridation of the nitride region in the presence of a nitrogen containing gas.  
   
   
       9 . The method as recited in  claim 8  wherein the nitrogen containing gas is nitrous oxide (N 2 O) or nitric oxide (NO) or its mixtures.  
   
   
       10 . The method as recited in  claim 7  wherein forming the nitrogen containing oxide layer over the nitride region further includes forming the nitrogen containing oxide layer over sidewalls of the gate electrode.  
   
   
       11 . The method as recited in  claim 1  further including forming a dielectric layer having interconnects therein over the gate structure to form an operational integrated circuit.  
   
   
       12 . A semiconductor device, comprising: 
 a gate structure positioned over a substrate, the gate structure including a gate electrode located over a nitrided gate dielectric; and    a nitride region located in a sidewall of the nitrided gate dielectric.    
   
   
       13 . The semiconductor device as recited in  claim 12  wherein the nitride region has a thickness ranging from about 0.5 nm and about 1.0 nm.  
   
   
       14 . The semiconductor device as recited in  claim 12  wherein the nitride region is further located in sidewalls of the gate electrode.  
   
   
       15 . The semiconductor device as recited in  claim 12  further including a nitrogen containing oxide layer located over the nitride region.  
   
   
       16 . The semiconductor device as recited in  claim 15  wherein the nitrogen containing oxide layer is further located over sidewalls of the gate electrode.  
   
   
       17 . The semiconductor device as recited in  claim 15  wherein the nitrogen containing oxide layer has a thickness ranging from about 1.0 nm to about 1.5 nm.  
   
   
       18 . The semiconductor device as recited in  claim 12  wherein edges of the nitrided gate dielectric have a higher concentration of nitrogen than a center of the nitrided gate dielectric.  
   
   
       19 . The semiconductor device as recited in  claim 12  wherein edges of the nitrided gate dielectric have substantially the same concentration of nitrogen than a center of the nitrided gate dielectric.  
   
   
       20 . The semiconductor device as recited in  claim 12  further including a dielectric layer having interconnects therein located over the gate structure.