Inventor · disambiguated record
Yasuhisa Oana
Also filed as: OANA YASUHISA
18 granted patents·2 pending applications·727 citations·filing 1981–2006
96Inventor score
Files withTOSHIBA KK10ADV LCD TECH DEV CT CO LTD3IBM3TOKYO SHIBAURA ELECTRIC CO2LG PHILIPS LCD CO LTD1
Top patents by PatentIndex Score
20 records- 0193US4905066AThin-film transistorTOSHIBA KK·Filed 1989·Granted Feb 27, 1990·124 cites·6 claims
- 0290US5028551AElectrode interconnection material, semiconductor device using this material and driving circuit substrate for display deviceTOSHIBA KK·Filed 1990·Granted Jul 2, 1991·109 cites·5 claims
- 0389US4946259AColor liquid crystal display and method of manufactureIBM·Filed 1990·Granted Aug 7, 1990·96 cites·13 claims
- 0488US6008869ADisplay device substrate and method of manufacturing the sameTOSHIBA KK·Filed 1995·Granted Dec 28, 1999·115 cites·28 claims
- 0588US4963240ASputtering alloy target and method of producing an alloy filmTOSHIBA KK·Filed 1988·Granted Oct 16, 1990·38 cites·9 claims
- 0680US7348598B2Thin film transistor and liquid crystal display device using the sameLG PHILIPS LCD CO LTD·Filed 2006·Granted Mar 25, 2008·8 cites·10 claims
- 0778US5142392AColor liquid crystal display having light shielding layers and method of manufacturing thereofIBM·Filed 1991·Granted Aug 25, 1992·45 cites·3 claims
- 0876US5170244AElectrode interconnection material, semiconductor device using this material and driving circuit substrate for display deviceTOSHIBA KK·Filed 1991·Granted Dec 8, 1992·54 cites·18 claims
- 0971US5083853AColor liquid crystal display device having light-shielding conductive layersIBM·Filed 1988·Granted Jan 28, 1992·27 cites·3 claims
- 1068US4975760AElectrode interconnection material, semiconductor device using this material and driving circuit substrate for display deviceTOSHIBA KK·Filed 1989·Granted Dec 4, 1990·28 cites·6 claims
- 1167US4534622ASolid-state device having a plurality of optical functionsTOKYO SHIBAURA ELECTRIC CO·Filed 1984·Granted Aug 13, 1985·25 cites·10 claims
- 1265US6146929AMethod for manufacturing semiconductor device using multiple steps continuously without exposing substrate to the atmosphereTOSHIBA KK·Filed 1999·Granted Nov 14, 2000·21 cites·19 claims
- 1357US6372083B1Method of manufacturing semiconductor device and apparatus for manufacturing the sameTOSHIBA KK·Filed 2000·Granted Apr 16, 2002·7 cites·10 claims
- 1448US7067404B2Thin film semiconductor device having a gate electrode insulator formed through high-heat oxidizationADV LCD TECH DEV CT CO LTD·Filed 2005·Granted Jun 27, 2006·0 cites·6 claims
- 1547US4447825AIII-V Group compound semiconductor light-emitting element having a doped tantalum barrier layerTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted May 8, 1984·12 cites·5 claims
- 1644US4709990AMethod of manufacturing a color-matrix-type liquid crystal display deviceTOSHIBA KK·Filed 1985·Granted Dec 1, 1987·9 cites·19 claims
- 1741US2003071312A1Thin film semiconductor device having a gate electrode insulator formed through high-heat oxidizationFiled 2002·Application pending·0 cites
- 1840US5227901ALiquid crystal display deviceTOSHIBA KK·Filed 1992·Granted Jul 13, 1993·9 cites·11 claims
- 1940US2005085002A1Thin film semiconductor device and its substrate sheet as well as the method for production thereofADV LCD TECH DEV CT CO LTD·Filed 2004·Application pending·0 cites
- 2037US6828178B2Thin film semiconductor device having arrayed configuration of semiconductor crystals and a method for producing itADV LCD TECH DEV CT CO LTD·Filed 2002·Granted Dec 7, 2004·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →