Inventor · disambiguated record
Michiharu Matsui
Also filed as: MATSUI MICHIHARU
25 granted patents·1 pending application·378 citations·filing 1995–2015
97Inventor score
Top patents by PatentIndex Score
26 records- 0194US7049653B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2005·Granted May 23, 2006·18 cites·4 claims
- 0293US6894341B2Semiconductor device and manufacturing methodTOSHIBA KK·Filed 2002·Granted May 17, 2005·61 cites·16 claims
- 0392US6835978B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2001·Granted Dec 28, 2004·43 cites·9 claims
- 0491US6853029B2Non-volatile semiconductor memory device with multi-layer gate structureTOSHIBA KK·Filed 2002·Granted Feb 8, 2005·58 cites·12 claims
- 0591US6661052B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2002·Granted Dec 9, 2003·34 cites·9 claims
- 0689US7939406B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2009·Granted May 10, 2011·9 cites·19 claims
- 0788US7573092B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2006·Granted Aug 11, 2009·9 cites·15 claims
- 0885US7382016B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Jun 3, 2008·7 cites·6 claims
- 0985US6998673B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Feb 14, 2006·7 cites·10 claims
- 1083US7352027B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2007·Granted Apr 1, 2008·6 cites·21 claims
- 1182US7449745B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2007·Granted Nov 11, 2008·5 cites·9 claims
- 1281US7348627B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2006·Granted Mar 25, 2008·5 cites·12 claims
- 1380US7045423B2Non-volatile semiconductor memory device with multi-layer gate structureTOSHIBA KK·Filed 2004·Granted May 16, 2006·24 cites·4 claims
- 1476US6902976B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Jun 7, 2005·12 cites·5 claims
- 1576US6844590B2Semiconductor device with trench isolation between two regions having different gate insulating filmsTOSHIBA KK·Filed 2002·Granted Jan 18, 2005·20 cites·16 claims
- 1672US6927449B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2004·Granted Aug 9, 2005·9 cites·9 claims
- 1768US8405139B2Nonvolatile semiconductor memory device having element isolating region of trench typeMATSUI MICHIHARU·Filed 2011·Granted Mar 26, 2013·1 cites·24 claims
- 1866US7417281B2Semiconductor device with a selection gate and a peripheral gateTOSHIBA KK·Filed 2007·Granted Aug 26, 2008·2 cites·20 claims
- 1965US7538380B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2006·Granted May 26, 2009·1 cites·14 claims
- 2065US6441427B1NOR-type flash memory and method for manufacturing the sameTOSHIBA KK·Filed 1999·Granted Aug 27, 2002·21 cites·7 claims
- 2164US9059300B2Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2013·Granted Jun 16, 2015·1 cites·10 claims
- 2261US6969660B2Method of manufacturing a semiconductor device with trench isolation between two regions having different gate insulating filmsTOSHIBA KK·Filed 2004·Granted Nov 29, 2005·8 cites·8 claims
- 2360US8421143B2Nonvolatile semiconductor memory device having element isolating region of trench typeMATSUI MICHIHARU·Filed 2012·Granted Apr 16, 2013·1 cites·20 claims
- 2451US5559736ANon-volatile semiconductor memory device capable of preventing excessive-writingTOSHIBA KK·Filed 1995·Granted Sep 24, 1996·13 cites·33 claims
- 2551US2015243670A1Nonvolatile semiconductor memory device having element isolating region of trench typeTOSHIBA KK·Filed 2015·Application pending·0 cites
- 2650US7504294B2Method of manufacturing an electrically erasable programmable read-only memory (EEPROM)TOSHIBA KK·Filed 2004·Granted Mar 17, 2009·3 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →