Inventor · disambiguated record
Seung-Chang Lee
Also filed as: LEE SEUNG-CHANG
34 granted patents·5 pending applications·226 citations·filing 1994–2023
97Inventor score
Files withLEE SEUNG CHANG12STC UNM12UNM RAINFOREST INNOVATIONS11BRUECK STEVEN R J3KOREA ELECTRONICS TELECOMM1
Top patents by PatentIndex Score
39 records- 0198US11342442B2Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestalUNM RAINFOREST INNOVATIONS·Filed 2020·Granted May 24, 2022·4 cites·22 claims
- 0298US8313967B1Cubic phase, nitrogen-based compound semiconductor films epitaxially grown on a grooved Si <001> substrateLEE SEUNG-CHANG·Filed 2010·Granted Nov 20, 2012·42 cites·29 claims
- 0397US9461112B1Cubic phase, nitrogen-based compound semiconductor filmsLEE SEUNG-CHANG·Filed 2015·Granted Oct 4, 2016·15 cites·9 claims
- 0497US9142400B1Method of making a heteroepitaxial layer on a seed areaSTC UNM·Filed 2013·Granted Sep 22, 2015·15 cites·10 claims
- 0597US8030108B1Epitaxial growth of in-plane nanowires and nanowire devicesSTC UNM·Filed 2009·Granted Oct 4, 2011·54 cites·15 claims
- 0694US9752252B1Cubic phase, nitrogen-based compound semiconductor filmsLEE SEUNG-CHANG·Filed 2016·Granted Sep 5, 2017·7 cites·16 claims
- 0794US9076813B1Gate-all-around metal-oxide-semiconductor transistors with gate oxidesLEE SEUNG-CHANG·Filed 2014·Granted Jul 7, 2015·16 cites·15 claims
- 0893US10141418B1Device with heteroepitaxial structure made using a growth maskBRUECK STEVEN R J·Filed 2015·Granted Nov 27, 2018·6 cites·5 claims
- 0993US9153431B1Cubic phase, nitrogen-based compound semiconductor filmsSTC UNM·Filed 2012·Granted Oct 6, 2015·11 cites·17 claims
- 1091US12183852B2Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structureUNM RAINFOREST INNOVATIONS·Filed 2021·Granted Dec 31, 2024·2 cites·19 claims
- 1191US11374106B2Method of making heteroepitaxial structures and device formed by the methodUNM RAINFOREST INNOVATIONS·Filed 2020·Granted Jun 28, 2022·2 cites·24 claims
- 1288US9466739B1Surface plasma wave coupled detectorsBRUECK STEVEN R J·Filed 2014·Granted Oct 11, 2016·4 cites·18 claims
- 1387US9520472B2Growth of cubic crystalline phase strucure on silicon substrates and devices comprising the cubic crystalline phase structureSTC UNM·Filed 2013·Granted Dec 13, 2016·9 cites·20 claims
- 1485US9257535B2Gate-all-around metal-oxide-semiconductor transistors with gate oxidesLEE SEUNG-CHANG·Filed 2015·Granted Feb 9, 2016·4 cites·16 claims
- 1584US8785226B2Epitaxial growth of in-plane nanowires and nanowire devicesSTC UNM·Filed 2013·Granted Jul 22, 2014·4 cites·18 claims
- 1683US10453996B2Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structureSTC UNM·Filed 2016·Granted Oct 22, 2019·3 cites·20 claims
- 1783US2022293768A1Method of making heteroepitaxial structures and device formed by the methodUNM RAINFOREST INNOVATIONS·Filed 2022·Application pending·0 cites
- 1883US2022285526A1Method of making heteroepitaxial structures and device formed by the methodUNM RAINFOREST INNOVATIONS·Filed 2022·Application pending·0 cites
- 1982US10164082B2Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structureSTC UNM·Filed 2017·Granted Dec 25, 2018·3 cites·11 claims
- 2082US8835851B2Plasmonic detectorsLEE SEUNG-CHANG·Filed 2010·Granted Sep 16, 2014·3 cites·20 claims
- 2182US8557622B2Epitaxial growth of in-plane nanowires and nanowire devicesLEE SEUNG CHANG·Filed 2011·Granted Oct 15, 2013·4 cites·12 claims
- 2279US8980730B1Selective nanoscale growth of lattice mismatched materialsLEE SEUNG-CHANG·Filed 2011·Granted Mar 17, 2015·3 cites·25 claims
- 2375US11456370B2Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a nanostructured pedestalUNM RAINFOREST INNOVATIONS·Filed 2020·Granted Sep 27, 2022·0 cites·21 claims
- 2475US11349011B2Method of making heteroepitaxial structures and device formed by the methodUNM RAINFOREST INNOVATIONS·Filed 2020·Granted May 31, 2022·0 cites·25 claims
- 2575US11342441B2Method of forming a seed area and growing a heteroepitaxial layer on the seed areaUNM RAINFOREST INNOVATIONS·Filed 2020·Granted May 24, 2022·0 cites·25 claims
- 2674US2020212198A1Method of making heteroepitaxial structures and device formed by the methodSTC UNM·Filed 2020·Application pending·0 cites
- 2772US10644144B2Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structureSTC UNM·Filed 2018·Granted May 5, 2020·1 cites·9 claims
- 2869US11342438B1Device with heteroepitaxial structure made using a growth maskUNM RAINFOREST INNOVATIONS·Filed 2018·Granted May 24, 2022·0 cites·30 claims
- 2968US7432161B2Fabrication of optical-quality facets vertical to a (001) orientation substrate by selective epitaxial growthSTC UNM·Filed 2006·Granted Oct 7, 2008·2 cites·16 claims
- 3066US2025360153A1Pharmaceutical composition for preventing or treating acneLEE SEUNG CHANG·Filed 2023·Application pending·0 cites
- 3162US11469104B2Nanowire bending for planar device process on (001) Si substratesUNM RAINFOREST INNOVATIONS·Filed 2019·Granted Oct 11, 2022·0 cites·20 claims
- 3261US10957819B2Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structureUNM RAINFOREST INNOVATIONS·Filed 2019·Granted Mar 23, 2021·0 cites·9 claims
- 3358US10109480B2Selective nanoscale growth of lattice mismatched materialsSTC UNM·Filed 2017·Granted Oct 23, 2018·0 cites·20 claims
- 3456US10283667B1Surface plasma wave coupled detectorsBRUECK STEVEN R J·Filed 2016·Granted May 7, 2019·0 cites·14 claims
- 3556US8841756B2Fabrication of optical-quality facets vertical to a (001) orientation substrate by selective epitaxial growthLEE SEUNG-CHANG·Filed 2008·Granted Sep 23, 2014·0 cites·8 claims
- 3653US9685324B2Selective nanoscale growth of lattice mismatched materialsLEE SEUNG-CHANG·Filed 2015·Granted Jun 20, 2017·0 cites·14 claims
- 3752US10483105B2Nanowire bending for planar device process on (001) Si substratesSTC UNM·Filed 2016·Granted Nov 19, 2019·0 cites·20 claims
- 3845US2013036693A1Doughtnut-shaped hollow core body, bidirectional hollow core slab using the same, and construction method thereofLEE SEUNG CHANG·Filed 2010·Application pending·0 cites
- 3942US5500389AProcess for formation for hetero junction structured film utilizing V groovesKOREA ELECTRONICS TELECOMM·Filed 1994·Granted Mar 19, 1996·12 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →