Inventor · disambiguated record
Hajime Nagano
Also filed as: NAGANO HAJIME
50 granted patents·16 pending applications·809 citations·filing 2001–2022
98Inventor score
Top patents by PatentIndex Score
66 records- 0199US6531754B1Manufacturing method of partial SOI wafer, semiconductor device using the partial SOI wafer and manufacturing method thereofTOSHIBA KK·Filed 2002·Granted Mar 11, 2003·250 cites·14 claims
- 0295US7884415B2Semiconductor memory device having multiple air gaps in interelectrode insulating filmTOSHIBA KK·Filed 2009·Granted Feb 8, 2011·33 cites·6 claims
- 0395US6835981B2Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regionsTOSHIBA KK·Filed 2001·Granted Dec 28, 2004·88 cites·16 claims
- 0493US9728552B1Semiconductor memory device having voids between word lines and a source lineTOSHIBA KK·Filed 2016·Granted Aug 8, 2017·10 cites·16 claims
- 0591US10438966B2Semiconductor deviceTOSHIBA MEMORY CORP·Filed 2018·Granted Oct 8, 2019·9 cites·16 claims
- 0690US6630714B2Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layerTOSHIBA KK·Filed 2002·Granted Oct 7, 2003·47 cites·36 claims
- 0788US10186521B2Semiconductor device and method for manufacturing semiconductor deviceTOSHIBA MEMORY CORP·Filed 2017·Granted Jan 22, 2019·5 cites·1 claims
- 0888US7323748B2Semiconductor device having epitaxial layerTOSHIBA KK·Filed 2006·Granted Jan 29, 2008·13 cites·3 claims
- 0988US6906384B2Semiconductor device having one of patterned SOI and SON structureTOSHIBA KK·Filed 2002·Granted Jun 14, 2005·44 cites·19 claims
- 1086US7294562B2Semiconductor substrate, method of manufacturing the same, semiconductor device, and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Nov 13, 2007·12 cites·14 claims
- 1186US7095081B2Semiconductor device and manufacturing method thereofTOSHIBA KK·Filed 2006·Granted Aug 22, 2006·11 cites·3 claims
- 1285US7057259B2Semiconductor wafer with ID mark, equipment for and method of manufacturing semiconductor device from themTOSHIBA KK·Filed 2002·Granted Jun 6, 2006·35 cites·38 claims
- 1384US7049661B2Semiconductor device having epitaxial layerTOSHIBA KK·Filed 2003·Granted May 23, 2006·28 cites·3 claims
- 1482US7420249B2Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layerTOSHIBA KK·Filed 2007·Granted Sep 2, 2008·7 cites·7 claims
- 1580US6855976B2Semiconductor device using partial SOI substrate and manufacturing method thereofTOSHIBA KK·Filed 2002·Granted Feb 15, 2005·24 cites·8 claims
- 1677US7700381B2Semiconductor wafer with ID mark, equipment for and method of manufacturing semiconductor device from themKABUSHIKIA KAISHA TOSHIBA·Filed 2006·Granted Apr 20, 2010·9 cites·1 claims
- 1777US7561858B2Wireless communication terminalKYOCERA CORP·Filed 2006·Granted Jul 14, 2009·8 cites·6 claims
- 1877US7561859B2Wireless communication terminal, transmission control method, and computer programKYOCERA CORP·Filed 2006·Granted Jul 14, 2009·8 cites·15 claims
- 1976US9920425B2Semiconductor manufacturing apparatus and manufacturing method of semiconductor deviceTOSHIBA MEMORY CORP·Filed 2014·Granted Mar 20, 2018·3 cites·5 claims
- 2076US7265017B2Method for manufacturing partial SOI substratesTOSHIBA KK·Filed 2005·Granted Sep 4, 2007·5 cites·6 claims
- 2176US7018904B2Semiconductor chip having multiple functional blocks integrated in a single chip and method for fabricating the sameTOSHIBA KK·Filed 2004·Granted Mar 28, 2006·17 cites·13 claims
- 2274US7510945B2Element formation substrate, method of manufacturing the same, and semiconductor deviceTOSHIBA KK·Filed 2007·Granted Mar 31, 2009·5 cites·10 claims
- 2374US7148543B2Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regionsTOSHIBA KK·Filed 2004·Granted Dec 12, 2006·16 cites·17 claims
- 2472US7439112B2Semiconductor device using partial SOI substrate and manufacturing method thereofTOSHIBA KK·Filed 2006·Granted Oct 21, 2008·4 cites·5 claims
- 2569US7718483B2Method of manufacturing non-volatile semiconductor memoryTOSHIBA KK·Filed 2006·Granted May 18, 2010·4 cites·12 claims
- 2668US7763931B2Nonvolatile semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Jul 27, 2010·5 cites·7 claims
- 2767US7187035B2Semiconductor device comprising multiple layers with trenches formed on a semiconductor substrateTOSHIBA KK·Filed 2002·Granted Mar 6, 2007·9 cites·5 claims
- 2867US7075169B2Semiconductor device having a hollow region and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Jul 11, 2006·12 cites·4 claims
- 2967US6770119B2Mercury removal method and systemMITSUBISHI HEAVY IND LTD·Filed 2002·Granted Aug 3, 2004·14 cites·10 claims
- 3066US8532615B2Base station and mobile terminalNAGANO HAJIME·Filed 2009·Granted Sep 10, 2013·4 cites·5 claims
- 3166US7381389B2Wet gas purification method and system for practicing the sameMITSUBISHI HEAVY IND LTD·Filed 2003·Granted Jun 3, 2008·12 cites·6 claims
- 3265US8017990B2Nonvolatile semiconductor memory device and method of fabricating the sameTOSHIBA KK·Filed 2009·Granted Sep 13, 2011·2 cites·8 claims
- 3364US7019365B2Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layerTOSHIBA KK·Filed 2003·Granted Mar 28, 2006·8 cites·3 claims
- 3463US7122864B2Semiconductor substrate having a partial SOI structure, method of manufacturing the same, a semiconductor device having a partial SOI structure, and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Oct 17, 2006·9 cites·7 claims
- 3562US6956265B2Semiconductor device and method for manufacturing partial SOI substratesTOSHIBA KK·Filed 2003·Granted Oct 18, 2005·8 cites·7 claims
- 3659US7598562B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Oct 6, 2009·1 cites·9 claims
- 3758US6933590B2Semiconductor device comprising plurality of semiconductor areas having the same top surface and different film thicknesses and manufacturing method for the sameTOSHIBA KK·Filed 2003·Granted Aug 23, 2005·8 cites·7 claims
- 3857US7525154B2Semiconductor substrate, manufacturing method therefor, and semiconductor deviceTOSHIBA KK·Filed 2004·Granted Apr 28, 2009·7 cites·8 claims
- 3956US7285825B2Element formation substrate for forming semiconductor deviceTOSHIBA KK·Filed 2003·Granted Oct 23, 2007·6 cites·7 claims
- 4054US7749455B2Apparatus for treating COS for gas produced by gasification and method for treating COSMITSUBISHI HEAVY IND LTD·Filed 2003·Granted Jul 6, 2010·2 cites·3 claims
- 4154US2023098980A1Terminal insertion deviceYAZAKI CORP·Filed 2022·Application pending·0 cites
- 4253US7521300B2Semiconductor device substrate including a single-crystalline layer and method of manufacturing semiconductor device substrateTOSHIBA KK·Filed 2006·Granted Apr 21, 2009·0 cites·7 claims
- 4353US2023097349A1Terminal insertion method and terminal insertion deviceYAZAKI CORP·Filed 2022·Application pending·0 cites
- 4452US2023096446A1Terminal insertion deviceYAZAKI CORP·Filed 2022·Application pending·0 cites
- 4550US7071039B2Manufacturing method of partial SOI wafer, semiconductor device using the partial SOI wafer and manufacturing method thereofTOSHIBA KK·Filed 2003·Granted Jul 4, 2006·3 cites·10 claims
- 4649US7112822B2Semiconductor device using partial SOI substrate and manufacturing method thereofTOSHIBA KK·Filed 2004·Granted Sep 26, 2006·2 cites·9 claims
- 4749US2009298472A1Base station and mobile stationKYOCERA CORP·Filed 2009·Application pending·0 cites
- 4848US2005156245A1Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layerFiled 2005·Application pending·0 cites
- 4946US2009047777A1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2008·Application pending·0 cites
- 5046US2011104883A1Method of fabricating semiconductor deviceTOSHIBA KK·Filed 2011·Application pending·0 cites
Showing the top 50 of 66 patent records by PatentIndex Score.
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