Semiconductor device formed in semiconductor layer arranged on substrate with one of insulating film and cavity interposed between the substrate and the semiconductor layer

Abstract

A semiconductor device according to an aspect of the present invention comprises a first semiconductor layer and a plurality of second semiconductor layers. The first semiconductor layer is formed in a first region of a semiconductor substrate with one of an insulating film and a cavity interposed between the semiconductor substrate and the first semiconductor layer. The plurality of second semiconductor layers is formed in second regions of the semiconductor substrate.

1 - 24 . (canceled)  
   
   
       25 . A semiconductor device comprising: 
 a plurality of first semiconductor layers formed in a first region of a semiconductor substrate with one of an insulating film and a cavity interposed between said semiconductor substrate and said plurality of first semiconductor layers; and    a second semiconductor layer formed in a second region of said semiconductor substrate,    wherein at least a portion of said second semiconductor layer is formed within the range of a radius of 5 mm from a certain point on said plurality of first semiconductor layers.    
   
   
       26 . A semiconductor device according to  claim 25 , wherein logic circuits are formed in said plurality of first semiconductor layers, and at least one of a storage element, an analog element, and a signal input/output circuit is formed in said second semiconductor layer.  
   
   
       27 . A semiconductor device according to  claim 25 , wherein said plurality of first semiconductor layers are arranged to be symmetrical with respect to a certain point on said semiconductor substrate.  
   
   
       28 . A semiconductor device according to  claim 25 , wherein said plurality of first semiconductor layers are arranged to be symmetrical with respect to a certain straight line on said semiconductor substrate.  
   
   
       29 . A semiconductor device according to  claim 25 , wherein the area of said second semiconductor layer is larger than the sum of the areas of said plurality of first semiconductor layers.  
   
   
       30 . A semiconductor device according to  claim 25 , wherein said second semiconductor layer is deposited by epitaxial growth.  
   
   
       31 . A semiconductor device comprising: 
 a first semiconductor layer formed on a semiconductor substrate with one of an insulating film and a cavity interposed between said semiconductor substrate and said first semiconductor layer, said first semiconductor layer being a rectangle; and    a second semiconductor layer formed on an outerperipheral of said semiconductor substrate, said second semiconductor layer surrounding said first semiconductor layer, said second semiconductor layer being formed such that a corner of the rectangular first semiconductor layer has a cutaway shape,    wherein at least a portion of said second semiconductor layer is formed within the range of a radius of 5 mm from any point on said first semiconductor layer.