Inventor · disambiguated record
Lee Luo
Also filed as: LUO LEE · LUO LEE SHAWN
32 granted patents·6 pending applications·4,235 citations·filing 1996–2008
98Inventor score
Top patents by PatentIndex Score
38 records- 0199US6129044AApparatus for substrate processing with improved throughput and yieldAPPLIED MATERIALS INC·Filed 1999·Granted Oct 10, 2000·578 cites·21 claims
- 0299US5846332AThermally floating pedestal collar in a chemical vapor deposition chamberAPPLIED MATERIALS INC·Filed 1996·Granted Dec 8, 1998·863 cites·22 claims
- 0398US6189482B1High temperature, high flow rate chemical vapor deposition apparatus and related methodsAPPLIED MATERIALS INC·Filed 1997·Granted Feb 20, 2001·447 cites·38 claims
- 0498US5993916AMethod for substrate processing with improved throughput and yieldAPPLIED MATERIALS INC·Filed 1997·Granted Nov 30, 1999·311 cites·13 claims
- 0597US6210485B1Chemical vapor deposition vaporizerAPPLIED MATERIALS INC·Filed 1999·Granted Apr 3, 2001·450 cites·56 claims
- 0696US7745329B2Tungsten nitride atomic layer deposition processesAPPLIED MATERIALS INC·Filed 2008·Granted Jun 29, 2010·36 cites·14 claims
- 0796US6833161B2Cyclical deposition of tungsten nitride for metal oxide gate electrodeAPPLIED MATERIALS INC·Filed 2002·Granted Dec 21, 2004·143 cites·53 claims
- 0896US6392290B1Vertical structure for semiconductor wafer-level chip scale packagesSILICONIX INC·Filed 2000·Granted May 21, 2002·171 cites·23 claims
- 0996US5983906AMethods and apparatus for a cleaning process in a high temperature, corrosive, plasma environmentAPPLIED MATERIALS INC·Filed 1997·Granted Nov 16, 1999·153 cites·27 claims
- 1096US5968379AHigh temperature ceramic heater assembly with RF capability and related methodsAPPLIED MATERIALS INC·Filed 1997·Granted Oct 19, 1999·262 cites·35 claims
- 1196US5964947ARemovable pumping channel liners within a chemical vapor deposition chamberAPPLIED MATERIALS INC·Filed 1997·Granted Oct 12, 1999·96 cites·20 claims
- 1295US6051286AHigh temperature, high deposition rate process and apparatus for depositing titanium layersAPPLIED MATERIALS INC·Filed 1997·Granted Apr 18, 2000·170 cites·30 claims
- 1393US6949203B2System level in-situ integrated dielectric etch process particularly useful for copper dual damasceneAPPLIED MATERIALS INC·Filed 2003·Granted Sep 27, 2005·69 cites·46 claims
- 1493US6713127B2Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVDAPPLIED MATERIALS INC·Filed 2001·Granted Mar 30, 2004·82 cites·10 claims
- 1590US8336488B2Multi-station plasma reactor with multiple plasma regionsCHEN AIHUA·Filed 2007·Granted Dec 25, 2012·11 cites·28 claims
- 1690US7429516B2Tungsten nitride atomic layer deposition processesAPPLIED MATERIALS INC·Filed 2006·Granted Sep 30, 2008·12 cites·11 claims
- 1790US5994678AApparatus for ceramic pedestal and metal shaft assemblyAPPLIED MATERIALS INC·Filed 1997·Granted Nov 30, 1999·89 cites·22 claims
- 1888US6582522B2Emissivity-change-free pumping plate kit in a single wafer chamberAPPLIED MATERIALS INC·Filed 2001·Granted Jun 24, 2003·37 cites·13 claims
- 1988US6500357B1System level in-situ integrated dielectric etch process particularly useful for copper dual damasceneAPPLIED MATERIALS INC·Filed 2000·Granted Dec 31, 2002·38 cites·14 claims
- 2087US7115499B2Cyclical deposition of tungsten nitride for metal oxide gate electrodeAPPLIED MATERIALS INC·Filed 2004·Granted Oct 3, 2006·28 cites·23 claims
- 2182US6270859B2Plasma treatment of titanium nitride formed by chemical vapor depositionAPPLIED MATERIALS INC·Filed 1998·Granted Aug 7, 2001·42 cites·22 claims
- 2281US7335266B2Method of forming a controlled and uniform lightly phosphorous doped silicon filmAPPLIED MATERIALS INC·Filed 2005·Granted Feb 26, 2008·7 cites·6 claims
- 2380US6559039B2Doped silicon deposition process in resistively heated single wafer chamberAPPLIED MATERIALS INC·Filed 2001·Granted May 6, 2003·23 cites·41 claims
- 2476US7608300B2Methods and devices to reduce defects in dielectric stack structuresAPPLIED MATERIALS INC·Filed 2003·Granted Oct 27, 2009·12 cites·6 claims
- 2576US6884464B2Methods for forming silicon comprising films using hexachlorodisilane in a single-wafer deposion chamberAPPLIED MATERIALS INC·Filed 2002·Granted Apr 26, 2005·21 cites·20 claims
- 2676US6559074B1Method of forming a silicon nitride layer on a substrateAPPLIED MATERIALS INC·Filed 2001·Granted May 6, 2003·19 cites·14 claims
- 2771US6726955B1Method of controlling the crystal structure of polycrystalline siliconAPPLIED MATERIALS INC·Filed 2000·Granted Apr 27, 2004·14 cites·28 claims
- 2870US6077562AMethod for depositing barium strontium titanateAPPLIED MATERIALS INC·Filed 1998·Granted Jun 20, 2000·19 cites·10 claims
- 2968US6802906B2Emissivity-change-free pumping plate kit in a single wafer chamberAPPLIED MATERIALS INC·Filed 2002·Granted Oct 12, 2004·11 cites·24 claims
- 3064US2008257864A1Methods and devices to reduce defects in dielectric stack structuresAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 3162US6982214B2Method of forming a controlled and uniform lightly phosphorous doped silicon filmAPPLIED MATERIALS INC·Filed 2002·Granted Jan 3, 2006·7 cites·15 claims
- 3262US6566183B1Method of making a transistor, in particular spacers of the transistorFiled 2001·Granted May 20, 2003·9 cites·20 claims
- 3358US6793835B2System level in-situ integrated dielectric etch process particularly useful for copper dual damasceneFiled 2002·Granted Sep 21, 2004·5 cites·12 claims
- 3439US2003124818A1Method and apparatus for forming silicon containing filmsAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
- 3539US2004206621A1Integrated equipment set for forming a low K dielectric interconnect on a substrateFiled 2004·Application pending·0 cites
- 3636US2003059535A1Cycling deposition of low temperature films in a cold wall single wafer process chamberFiled 2001·Application pending·0 cites
- 3733US2004009680A1Seedless method of forming a silicon germanium layer on a gate dielectric layerAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 3831US2003124873A1Method of annealing an oxide filmFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →