Inventor · disambiguated record
Ali Razavieh
Also filed as: RAZAVIEH ALI
19 granted patents·2 pending applications·304 citations·filing 2017–2024
93Inventor score
Top patents by PatentIndex Score
21 records- 0199US9991352B1Methods of forming a nano-sheet transistor device with a thicker gate stack and the resulting deviceGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 5, 2018·90 cites·20 claims
- 0298US10236292B1Complementary FETs with wrap around contacts and methods of forming sameGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 19, 2019·33 cites·9 claims
- 0398US10192867B1Complementary FETs with wrap around contacts and method of forming sameGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 29, 2019·134 cites·6 claims
- 0496US10170520B1Negative-capacitance steep-switch field effect transistor with integrated bi-stable resistive systemIBM·Filed 2018·Granted Jan 1, 2019·19 cites·20 claims
- 0595US10818803B1Fin-type field-effect transistors including a two-dimensional materialGLOBALFOUNDRIES INC·Filed 2019·Granted Oct 27, 2020·13 cites·20 claims
- 0694US11967637B2Fin-based lateral bipolar junction transistor with reduced base resistance and methodGLOBALFOUNDRIES US INC·Filed 2022·Granted Apr 23, 2024·2 cites·20 claims
- 0792US10256316B1Steep-switch field effect transistor with integrated bi-stable resistive systemIBM·Filed 2018·Granted Apr 9, 2019·7 cites·9 claims
- 0879US11043588B2Vertical field effect transistorGLOBALFOUNDRIES US INC·Filed 2019·Granted Jun 22, 2021·2 cites·20 claims
- 0977US11049934B2Transistor comprising a matrix of nanowires and methods of making such a transistorGLOBALFOUNDRIES US INC·Filed 2019·Granted Jun 29, 2021·2 cites·15 claims
- 1075US2025022915A1Device with vertical nanowire channel regionGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 1174US11094794B2Air spacer structuresGLOBALFOUNDRIES US INC·Filed 2019·Granted Aug 17, 2021·1 cites·8 claims
- 1273US10566436B2Steep-switch field effect transistor with integrated bi-stable resistive systemIBM·Filed 2019·Granted Feb 18, 2020·1 cites·9 claims
- 1370US12170315B2Field effect transistor with vertical nanowire in channel region and bottom spacer between the vertical nanowire and gate dielectric materialGLOBALFOUNDRIES US INC·Filed 2022·Granted Dec 17, 2024·0 cites·20 claims
- 1470US10991808B2Steep-switch field effect transistor with integrated bi-stable resistive systemIBM·Filed 2020·Granted Apr 27, 2021·0 cites·9 claims
- 1567US11605672B2Steep-switch field effect transistor with integrated bi-stable resistive systemIBM·Filed 2020·Granted Mar 14, 2023·0 cites·18 claims
- 1656US10964750B2Steep-switch field effect transistor with integrated bi-stable resistive systemIBM·Filed 2018·Granted Mar 30, 2021·0 cites·6 claims
- 1754US11462632B2Lateral bipolar junction transistor device and method of making such a deviceGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 4, 2022·0 cites·16 claims
- 1848US11362177B2Epitaxial semiconductor material regions for transistor devices and methods of forming sameGLOBALFOUNDRIES US INC·Filed 2020·Granted Jun 14, 2022·0 cites·13 claims
- 1947US11205699B2Epitaxial semiconductor material regions for transistor devices and methods of forming sameGLOBALFOUNDRIES US INC·Filed 2019·Granted Dec 21, 2021·0 cites·20 claims
- 2044US10872962B2Steep-switch field effect transistor with integrated bi-stable resistive systemIBM·Filed 2018·Granted Dec 22, 2020·0 cites·6 claims
- 2140US2020373410A1Contact structures over an active region of a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2019·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →