Inventor · disambiguated record
Takuya Futase
Also filed as: FUTASE TAKUYA
37 granted patents·6 pending applications·219 citations·filing 2002–2021
97Inventor score
Files withSANDISK TECHNOLOGIES INC11RENESAS ELECTRONICS CORP10RENESAS TECH CORP5FUTASE TAKUYA4SANDISK TECHNOLOGIES LLC4
Top patents by PatentIndex Score
43 records- 0197US9443910B1Silicided bit line for reversible-resistivity memorySANDISK 3D LLC·Filed 2015·Granted Sep 13, 2016·28 cites·25 claims
- 0290US7923319B2Method for manufacturing a semiconductor integrated circuit device circuit deviceRENESAS ELECTRONICS CORP·Filed 2009·Granted Apr 12, 2011·15 cites·17 claims
- 0390US6586161B2Mass production method of semiconductor integrated circuit device and manufacturing method of electronic deviceHITACHI LTD·Filed 2002·Granted Jul 1, 2003·39 cites·46 claims
- 0489US6737221B2Mass production method of semiconductor integrated circuit device and manufacturing method of electronic deviceRENESAS TECH CORP·Filed 2003·Granted May 18, 2004·33 cites·3 claims
- 0588US10297312B1Resistive memory cell programmed by metal alloy formation and method of operating thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 21, 2019·8 cites·27 claims
- 0688US9177853B1Barrier layer stack for bit line air gap formationSANDISK TECHNOLOGIES INC·Filed 2014·Granted Nov 3, 2015·9 cites·20 claims
- 0787US9524904B2Early bit line air gap formationSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 20, 2016·12 cites·26 claims
- 0886US7994049B2Manufacturing method of semiconductor device including filling a connecting hole with metal filmRENESAS ELECTRONICS CORP·Filed 2008·Granted Aug 9, 2011·11 cites·41 claims
- 0985US9401305B2Air gaps structures for damascene metal patterningSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jul 26, 2016·7 cites·15 claims
- 1082US9847249B2Buried etch stop layer for damascene bit line formationSANDISK TECHNOLOGIES LLC·Filed 2014·Granted Dec 19, 2017·5 cites·9 claims
- 1182US8293648B2Mass production method of semiconductor integrated circuit device and manufacturing method of electronic deviceFUTASE TAKUYA·Filed 2011·Granted Oct 23, 2012·4 cites·5 claims
- 1281US9391081B1Metal indentation to increase inter-metal breakdown voltageSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jul 12, 2016·4 cites·20 claims
- 1378US8541297B2Manufacturing method of semiconductor deviceYAMAGUCHI TADASHI·Filed 2011·Granted Sep 24, 2013·4 cites·18 claims
- 1478US7964500B2Method of manufacturing semiconductor integrated circuit deviceRENESAS ELECTRONICS CORP·Filed 2010·Granted Jun 21, 2011·4 cites·20 claims
- 1576US9799527B2Double trench isolationSANDISK TECHNOLOGIES LLC·Filed 2014·Granted Oct 24, 2017·3 cites·10 claims
- 1675US8110457B2Method of manufacturing semiconductor deviceFUTASE TAKUYA·Filed 2009·Granted Feb 7, 2012·5 cites·17 claims
- 1775US7955925B2Method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2008·Granted Jun 7, 2011·5 cites·43 claims
- 1874US7700448B2Manufacturing method of semiconductor deviceRENESAS TECH CORP·Filed 2008·Granted Apr 20, 2010·6 cites·17 claims
- 1973US7566662B2Method of dry cleaning silicon surface prior to forming self-aligned nickel silicide layerRENESAS TECH CORP·Filed 2007·Granted Jul 28, 2009·4 cites·22 claims
- 2072US7964509B2Mass production method of semiconductor integrated circuit device and manufacturing method of electronic deviceRENESAS ELECTRONICS CORP·Filed 2008·Granted Jun 21, 2011·2 cites·10 claims
- 2171US8034717B2Mass production method of semiconductor integrated circuit device and manufacturing method of electronic deviceRENESAS ELECTRONICS CORP·Filed 2008·Granted Oct 11, 2011·2 cites·9 claims
- 2270US9768183B2Source line formation and structureSANDISK TECHNOLOGIES LLC·Filed 2015·Granted Sep 19, 2017·2 cites·15 claims
- 2369US8268682B2Method for manufacturing a semiconductor integrated circuit deviceFUTASE TAKUYA·Filed 2011·Granted Sep 18, 2012·2 cites·8 claims
- 2468US9466523B2Contact hole collimation using etch-resistant wallsSANDISK TECHNOLOGIES INC·Filed 2014·Granted Oct 11, 2016·2 cites·15 claims
- 2567US11721392B2Low resistance monosilicide electrode for phase change memory and methods of making the sameWESTERN DIGITAL TECH INC·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 2666US11114157B1Low resistance monosilicide electrode for phase change memory and methods of making the sameWESTERN DIGITAL TECH INC·Filed 2020·Granted Sep 7, 2021·0 cites·8 claims
- 2763US8039378B2Method of manufacturing a semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2009·Granted Oct 18, 2011·1 cites·16 claims
- 2863US7851355B2Method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2007·Granted Dec 14, 2010·1 cites·11 claims
- 2959US9245898B2NAND flash memory integrated circuits and processes with controlled gate heightSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 26, 2016·1 cites·10 claims
- 3057US8222133B2Manufacturing method of semiconductor deviceFUTASE TAKUYA·Filed 2007·Granted Jul 17, 2012·0 cites·48 claims
- 3154US11758831B2Low resistance multi-layer electrode for phase change memory and methods of making the sameWESTERN DIGITAL TECH INC·Filed 2020·Granted Sep 12, 2023·0 cites·19 claims
- 3248US8021979B2Method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2010·Granted Sep 20, 2011·0 cites·12 claims
- 3348US2009149020A1Method of manufacturing a semiconductor deviceRENESAS TECH CORP·Filed 2008·Application pending·0 cites
- 3447US9478461B2Conductive line structure with openingsSANDISK TECHNOLOGIES INC·Filed 2014·Granted Oct 25, 2016·0 cites·21 claims
- 3543US2004259300A1Mass production method of semiconductor integrated circuit device and manufacturing method of electronic deviceRENESAS TECH CORP·Filed 2004·Application pending·0 cites
- 3642US8278199B2Method of manufacturing a semiconductor deviceOKADA SHIGENARI·Filed 2011·Granted Oct 2, 2012·0 cites·13 claims
- 3741US11424292B2Memory array containing capped aluminum access lines and method of making the sameWESTERN DIGITAL TECH INC·Filed 2020·Granted Aug 23, 2022·0 cites·2 claims
- 3841US9607997B1Metal line with increased inter-metal breakdown voltageSANDISK TECHNOLOGIES INC·Filed 2015·Granted Mar 28, 2017·0 cites·20 claims
- 3937US2011248355A1Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2011·Application pending·0 cites
- 4033US2016204059A1Conductive Lines with Protective SidewallsSANDISK TECHNOLOGIES INC·Filed 2015·Application pending·0 cites
- 4132US10096654B2Three-dimensional resistive random access memory containing self-aligned memory elementsSANDISK 3D LLC·Filed 2015·Granted Oct 9, 2018·0 cites·16 claims
- 4231US2017025354A1Contact Plug Extension for Bit Line ConnectionSANDISK TECHNOLOGIES INC·Filed 2015·Application pending·0 cites
- 4331US2017040333A1Contact Plug Constrained By Dielectric PortionsSANDISK TECHNOLOGIES INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →