Mass production method of semiconductor integrated circuit device and manufacturing method of electronic device

Abstract

In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).

1 - 54 . (cancelled)  
     
     
         55 . A fabrication method of a semiconductor integrated circuit device comprising the steps of: 
 (a) depositing a transition metal-containing film on individual wafers subjected to a wafer process;    (b) removing the transition metal-containing film from outer edge portions of a device side and an entire area of a back side of the individual wafers, on which the transition metal-containing film has been deposited;    wherein the individual wafers are supported with pins in contact with the side surfaces of the wafers; and    (c) subjecting the individual wafers, from which said transition metal-containing film has been removed, to a lithography step, an inspection step or a thermal treating step that is common to a plurality of wafers belonging to a group on which lower layer steps are performed.    
     
     
         56 . A fabrication method of a semiconductor integrated circuit as defined in  claim 55 , wherein the removal of said transition metal-containing film is carried out substantially over all surfaces of the back side of said individual wafers.  
     
     
         57 . A fabrication method of a semiconductor integrated circuit as defined in  claim 55 , wherein the removal of said transition metal-containing film is carried out substantially over all outer edge portions of said device side of said individual wafers.  
     
     
         58 . A fabrication method of a semiconductor integrated circuit as defined in  claim 55 , wherein the removal of said transition metal-containing film is carried out substantially over all surfaces of said back side and substantially over all outer edge portions of said device side of said individual wafers.  
     
     
         59 . A fabrication method of a semiconductor integrated circuit as defined in  claim 55 , wherein said transition metal is made of a platinum group metal.  
     
     
         60 . A fabrication method of a semiconductor integrated circuit as defined in  claim 55 , wherein said transition metal is made of ruthenium.  
     
     
         61 . A fabrication method of a semiconductor integrated circuit as defined in  claim 55 , wherein said transition metal-containing film is made of copper.  
     
     
         62 . A fabrication method of a semiconductor integrated circuit as defined in  claim 55 , wherein said transition metal-containing film is made of a perovskite-type high dielectric or ferrodielectric.  
     
     
         63 . A fabrication method of a semiconductor integrated circuit as defined in  claim 62 , wherein said perovskite-type high dielectric or ferrodielectric is made of BST.  
     
     
         64 . A fabrication method of a semiconductor integrated circuit as defined in  claim 55 , wherein said transition metal-containing film is made of tantalum.  
     
     
         65 . A fabrication method of a semiconductor integrated circuit device comprising the steps of: 
 (a) depositing a transition metal-containing film on individual wafers subjected to a wafer process;    (b) removing the transition metal-containing film from outer edge portions of a device side and an entire area of a back side of the individual wafers, on which the transition metal-containing film has been deposited, by using a Bernoulli chuck-type etching device or apparatus; and    (c) subjecting the individual wafers, from which said transition metal-containing film has been removed, to a lithographic step, an inspection step or a thermal treating step that is common to a plurality of wafers belonging to a group on which lower layer steps are performed.    
     
     
         66 . A fabrication method of a semiconductor integrated circuit as defined in  claim 65 , wherein the removal of said transition metal-containing film is carried out substantially over all surfaces of the back side of said individual wafers.  
     
     
         67 . A fabrication method of a semiconductor integrated circuit as defined in  claim 65 , wherein the removal of said transition metal-containing film is carried out substantially over all outer edge portions of said device side of said individual wafers.  
     
     
         68 . A fabrication method of a semiconductor integrated circuit as defined in  claim 65 , wherein the removal of said transition metal-containing film is carried out substantially over all surfaces of said back side and substantially over all outer edge portions of said device side of said individual wafers.  
     
     
         69 . A fabrication method of a semiconductor integrated circuit as defined in  claim 65 , wherein said transition metal is made of a platinum group metal.  
     
     
         70 . A fabrication method of a semiconductor integrated circuit as defined in  claim 65 , wherein said transition metal is made of ruthenium.  
     
     
         71 . A fabrication method of a semiconductor integrated circuit as defined in  claim 65 , wherein said transition metal-containing film is made of copper.  
     
     
         72 . A fabrication method of a semiconductor integrated circuit as defined in  claim 65 , wherein said transition metal-containing film is made of a perovskite-type high dielectric or ferrodielectric.  
     
     
         73 . A fabrication method of a semiconductor integrated circuit as defined in  claim 72 , wherein said perovskite-type high dielectric or ferrodielectric is made of BST.  
     
     
         74 . A fabrication method of a semiconductor integrated circuit as defined in  claim 65 , wherein said transition metal-containing film is made of tantalum