Inventor · disambiguated record
Mu-Jen Lai
Also filed as: LAI MU-JEN
24 granted patents·19 pending applications·433 citations·filing 1999–2006
96Inventor score
Files withSUPERNOVA OPTOELECTRONICS CORP17LAI MU-JEN11VTERA TECHNOLOGY INC3HON SCHANG-JING2SUPER NOVA OPTOELECTRONICS COR2
Top patents by PatentIndex Score
43 records- 0193US7453098B2Vertical electrode structure of gallium nitride based light emitting diodeSUPERNOVA OPTOELECTRONICS CORP·Filed 2006·Granted Nov 18, 2008·22 cites·6 claims
- 0289US6492661B1Light emitting semiconductor device having reflection layer structureFiled 1999·Granted Dec 10, 2002·148 cites·9 claims
- 0386USD535264SElectrode layerSUPERNOVA OPTOELECTRONICS CORP·Filed 2005·Granted Jan 16, 2007·36 cites·1 claims
- 0481USD534134SElectrode layerSUPERNOVA OPTOELECTRONICS CORP·Filed 2005·Granted Dec 26, 2006·28 cites·1 claims
- 0580USD532756SElectrode layerSUPERNOVA OPTOELECTRONICS CORP·Filed 2005·Granted Nov 28, 2006·27 cites·1 claims
- 0679USD532757SElectrode layerSUPERNOVA OPTOELECTRONICS CORP·Filed 2005·Granted Nov 28, 2006·25 cites·1 claims
- 0776US6815722B2Light-emitting device with reduced lattice mismatchVETRA TECHNOLOGY INC·Filed 2003·Granted Nov 9, 2004·22 cites·9 claims
- 0870US6825498B2White light LEDVTERA TECHNOLOGY INC·Filed 2003·Granted Nov 30, 2004·21 cites·10 claims
- 0967US7285800B2Light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiencySUPERNOVA OPTOELECTRONICS CORP·Filed 2004·Granted Oct 23, 2007·19 cites·9 claims
- 1063USD533847SElectrode layerSUPERNOVA OPTOELECTRONICS CORP·Filed 2005·Granted Dec 19, 2006·13 cites·1 claims
- 1162US7772607B2GaN-series light emitting diode with high light efficiencySUPERNOVA OPTOELECTRONICS CORP·Filed 2006·Granted Aug 10, 2010·4 cites·18 claims
- 1262US7473570B2Method for forming epitaxial layers of gallium nitride-based compound semiconductorsSUPERNOVA OPTOELECTRONICS CORP·Filed 2006·Granted Jan 6, 2009·1 cites·5 claims
- 1362US7154163B2Epitaxial structure of gallium nitride series semiconductor device utilizing two buffer layersSUPERNOVA OPTOELECTRONICS CORP·Filed 2004·Granted Dec 26, 2006·6 cites·10 claims
- 1461USD534506SElectrode layerSUPERNOVA OPTOELECTRONICS CORP·Filed 2005·Granted Jan 2, 2007·12 cites·1 claims
- 1560US7098543B2Flip-chip packaged SMD-type LED with antistatic function and having no wire bondingSUPERNOVA OPTOELECTRONICS CORP·Filed 2004·Granted Aug 29, 2006·9 cites·35 claims
- 1659US7183583B2Gallium-nitride based light emitting diode structure and fabrication thereofSUPER NOVA OPTOELECTRONICS COR·Filed 2004·Granted Feb 27, 2007·7 cites·11 claims
- 1759US7001824B2Gallium nitride vertical light emitting diode structure and method of separating a substrate and a thin film in the structureSUPERNOVA OPTOELECTRONICS CORP·Filed 2004·Granted Feb 21, 2006·8 cites·7 claims
- 1859US6828169B2Method of forming group-III nitride semiconductor layer on a light-emitting deviceVETRA TECHNOLOGY INC·Filed 2003·Granted Dec 7, 2004·7 cites·20 claims
- 1958US6914315B2GaN-based heterostructure photodiodeVTERA TECHNOLOGY INC·Filed 2003·Granted Jul 5, 2005·8 cites·4 claims
- 2058US2006097272A1High light efficiency of GaN-series of light emitting diode and its manufacturing method thereofLAI MU-JEN·Filed 2005·Application pending·0 cites
- 2156US7119374B2Gallium nitride based light emitting device and the fabricating method for the sameSUPERNOVA OPTOELECTRONICS CORP·Filed 2004·Granted Oct 10, 2006·5 cites·5 claims
- 2252US2005110031A1High light efficiency of GaN-series of light emitting diode and its manufacturing method thereofFiled 2004·Application pending·0 cites
- 2351US2006175956A1Light emitting deviceLAI MU-JEN·Filed 2005·Application pending·0 cites
- 2450US7319045B2Gallium-nitride based light emitting diode structure and fabrication thereofSUPER NOVA OPTOELECTRONICS COR·Filed 2006·Granted Jan 15, 2008·0 cites·6 claims
- 2549US2006141753A1Epitaxial structure of gallium nitride series semiconductor device and process of manufacturing the sameSUPERNOVA OPTOELECTRONICS CORP·Filed 2006·Application pending·0 cites
- 2648US2006267038A1Manufacturing method and device for white light emittingLAI MU-JEN·Filed 2006·Application pending·0 cites
- 2745US2006033120A1Gallium nitride based light emitting device and the fabricating method for the sameHON SCHANG-JING·Filed 2005·Application pending·0 cites
- 2844US2006273342A1GaN-series of light emitting diode with high light extraction efficiencyLAI MU-JEN·Filed 2006·Application pending·0 cites
- 2944US2005236632A1Vertical electrode structure of gallium nitride based light emitting diodeLAI MU-JEN·Filed 2004·Application pending·0 cites
- 3042US2006267027A1Light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiencyLAI MU-JEN·Filed 2006·Application pending·0 cites
- 3142US2007051962A1Gallium nitride semiconductor light emitting deviceLAI MU-JEN·Filed 2005·Application pending·0 cites
- 3241US7208752B2Structure and manufacturing of gallium nitride light emitting diodeSUPERNOVA OPTOELECTRONICS CORP·Filed 2004·Granted Apr 24, 2007·5 cites·25 claims
- 3341US2006243987A1White light emitting deviceLAI MU-JEN·Filed 2005·Application pending·0 cites
- 3441US2005161690A1Manufacturing method and device for white light emittingFiled 2004·Application pending·0 cites
- 3540US2006054907A1Light-emitting device of gallium nitride-based III-V group compound semiconductorLAI MU-JEN·Filed 2004·Application pending·0 cites
- 3640US2005280352A1Vertical electrode structure of white light emitting diodeLAI MU-JEN·Filed 2004·Application pending·0 cites
- 3739US2004261693A1Epitaxial structure and process of GaN based compound semiconductorFiled 2003·Application pending·0 cites
- 3838US2003198301A1Method of epitaxial lateral overgrowthFiled 2003·Application pending·0 cites
- 3937US6835964B2GaN-based composition semiconductor light-emitting element and its window layer structureFiled 2003·Granted Dec 28, 2004·0 cites·10 claims
- 4035US2005218801A1Replaceable light emitting diode package assemblyHON SCHANG-JING·Filed 2004·Application pending·0 cites
- 4134US2005236636A1GaN-based light-emitting diode structureSUPERNOVA OPTOELECTRONICS CORP·Filed 2004·Application pending·0 cites
- 4230US2006108598A1Gallium nitride-based light-emitting deviceLAI MU-JEN·Filed 2004·Application pending·0 cites
- 4328US6787828B2Optical-gate transistor and method of manufacturing the sameVTERA TECHNOLOGY INC·Filed 2003·Granted Sep 7, 2004·0 cites·6 claims
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