Vertical electrode structure of gallium nitride based light emitting diode

Abstract

A vertical electrode structure of GaN-based light emitting diode discloses an oxide window layer constructing the GaN-based light emitting diode of vertical electrode structure, which effectively decreases the Fresnel reflection loss and total reflection, and further advances the luminous efficiency. Moreover, the further included metal reflecting layer causes the reflection without the selective angle of incidence, thus increasing the coverage of the reflecting angles and further reflecting the light emitted from a light emitting layer effectively. In addition, the invented structure can also advance the function of heat elimination and the electrostatic discharge (ESD) so as to the increase the operating life of the component and to be applicable to the using under the high current driving. Moreover, the vertical electrode structure of the present invention is able to lower down the manufacturing square of the chip and facilitate the post stage of the conventional wire bonding process.

1 . A vertical structure of a kind of GaN-based light emitting diode, wherein the structure comprising: 
 a first electrode;    a conductive substrate with said first electrode there-under;    a metal reflection layer with said conductive substrate there-under;    a GaN-based semiconductor stacked structure with said metal reflection layer there-under;    a oxide window layer with said GaN-based semiconductor stacked structure there-under; and    a second electrode with said oxide window layer there-under.    
   
   
       2 . The vertical electrode structure of GaN-based light emitting diode as claim in  claim 1 , wherein said oxide window layer refers to a N-type transparent conductive layer, which can be selected from the group consisting of indium tin oxide (ITO), indium molybdenum oxide (IMO), indium oxide, tin oxide, cadmium tin oxide, gallium oxide, indium zinc oxide, gallium zinc oxide, or zinc oxide.  
   
   
       3 . The vertical electrode structure of GaN-based light emitting diode as claim in  claim 1 , wherein said oxide window layer has a texturing structure.  
   
   
       4 . The vertical electrode structure of GaN-based light emitting diode as claim in  claim 1 , wherein the surface of said GaN-based semiconductor stacked structure and said oxide window layer all have the texturing structure.  
   
   
       5 . The vertical electrode structure of GaN-based light emitting diode as claim in  claim 1 , wherein a current blocking layer is further included between said GaN-based semiconductor stacked structure and said metal reflecting layer.  
   
   
       6 . The vertical electrode structure of GaN-based light emitting diode as claim in  claim 1 , wherein a current blocking area is further included between said GaN-based semiconductor stacked structure and said oxide window layer.  
   
   
       7 . The vertical electrode structure of GaN-based light emitting diode as claim in  claim 1 , wherein the surface of said GaN-based semiconductor stacked structure has a metal texturing layer.  
   
   
       8 . The vertical electrode structure of GaN-based light emitting diode as claim in  claim 1 , wherein said oxide window layer has a texturing structure and further includes a current blocking area between said GaN-based semiconductor stacked structure and said oxide window layer.  
   
   
       9 . The vertical electrode structure of GaN-based light emitting diode as claim in  claim 1 , wherein said GaN-based semiconductor stacked structure sequentially includes: 
 a P-type transparent ohmic contact metal layer;    a P-type ohmic contact layer;    a light emitting layer; and    a N-type ohmic contact layer.    
   
   
       10 . A vertical electrode structure of a kind of GaN-based light emitting diode, wherein the structure comprising: 
 a first electrode;    a conductive substrate with said first electrode there-under;    a metal reflecting layer with said conductive substrate there-under;    a GaN-based semiconductor stacked structure with said metal reflecting layer there-under, wherein the surface of said GaN-based semiconductor stacked structure has a texturing structure;    a oxide window layer with said GaN-based semiconductor stacked structure there-under; and    a second electrode with said oxide window layer there-under.    
   
   
       11 . The vertical electrode structure of GaN-based light emitting diode as claim in  claim 10 , wherein said oxide window layer refers a N-type transparent conductive layer, which can be selected from the group consisting of indium tin oxide (ITO), indium molybdenum oxide (IMO), indium oxide, tin oxide, cadmium tin oxide, gallium oxide, indium zinc oxide, gallium zinc oxide, or zinc oxide.  
   
   
       12 . The vertical electrode structure of GaN-based light emitting diode as claim in  claim 10 , wherein the surface of said GaN-based semiconductor stacked structure has a metal texturing layer.  
   
   
       13 . The vertical electrode structure of GaN-based light emitting diode as claim in  claim 10 , wherein a current blocking area is further included between said GaN-based semiconductor stacked structure and said metal reflecting layer.  
   
   
       14 . The vertical electrode structure of GaN-based light emitting diode as claim in  claim 10 , wherein a current blocking layer is further included between said GaN-based semiconductor stacked structure and oxide window layer.  
   
   
       15 . The vertical electrode structure of GaN-based light emitting diode as claim in  claim 10 , wherein said GaN-based semiconductor stacked structure sequentially comprises: 
 a P-type transparent ohmic contact metal layer;    a P-type ohmic contact layer;    a light emitting layer; and    a N-type ohmic contact layer.