Light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency

Abstract

A light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency that features on a substrate with concave and /or convex surface, a texturing surface layer, and a transparent conductive window layer. Therefore, the operating voltage is decreased and the efficiency of light extracting is improved.

1 . A light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiency, comprising: 
 a substrate having nano scale concave and/or convex surfaces;    a semiconductor stacked structure arranged over said substrate, and comprising:    a first gallium nitride-based III-V group compound semiconductor layer, a light-emitting layer and a second gallium nitride-based III-V group, compound semiconductor layer from the bottom up in sequence;    a micro scale texturing surface layer formed during the growth of epitaxy and arranged over said second gallium nitride-based III-V group compound semiconductor layer;    a transparent conductive window layer arranged over said micro scale texturing surface layer and establishing an ohmic contact with said micro sacle texturing surface layer;    a first electrode provided in electrical contact with said first gallium nitride-based III-V group compound semiconductor layer of said semiconductor stacked structure; and    a second electrode in electrical contacted with said transparent conductive window layer.    
   
   
       2 . The device according to  claim 1 , wherein said substrate is a single crystal whose refractive index is smaller than that of said semiconductor stacked structure.  
   
   
       3 . The device according to  claim 2 , wherein said nano scale concave and/or convex surface structure of said substrate interposed by said the first gallium nitride-based III-V group compound semiconductor laye.