Inventor · disambiguated record
Steve Kuo-Ren Hsia
Also filed as: CHEVALLIER CHRISTOPHE J · HSIA STEVE · HSIA STEVE K · HSIA STEVE KUO-REN
47 granted patents·3 pending applications·2,720 citations·filing 1984–2020
99Inventor score
Files withUNITY SEMICONDUCTOR CORP31CATALYST SEMICONDUCTOR INC4NEXFLASH TECHNOLOGIES INC4HEFEI RELIANCE MEMORY LTD3RINERSON DARRELL2
Top patents by PatentIndex Score
50 records- 0199US6753561B1Cross point memory array using multiple thin filmsUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Jun 22, 2004·425 cites·34 claims
- 0298US6965137B2Multi-layer conductive memory deviceUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Nov 15, 2005·168 cites·45 claims
- 0398US6834008B2Cross point memory array using multiple modes of operationUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Dec 21, 2004·161 cites·17 claims
- 0497US7884349B2Selection device for re-writable memoryUNITY SEMICONDUCTOR CORP·Filed 2008·Granted Feb 8, 2011·76 cites·39 claims
- 0597US7400006B1Conductive memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2006·Granted Jul 15, 2008·58 cites·24 claims
- 0697US7067862B2Conductive memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jun 27, 2006·142 cites·43 claims
- 0797US6917539B2High-density NVRAMUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jul 12, 2005·134 cites·52 claims
- 0897US6870755B2Re-writable memory with non-linear memory elementUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Mar 22, 2005·137 cites·18 claims
- 0996US9570515B2Memory element with a reactive metal layerUNITY SEMICONDUCTOR CORP·Filed 2015·Granted Feb 14, 2017·12 cites·19 claims
- 1096US6970375B2Providing a reference voltage to a cross point memory arrayUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Nov 29, 2005·108 cites·16 claims
- 1195US9806130B2Memory element with a reactive metal layerUNITY SEMICONDUCTOR CORP·Filed 2016·Granted Oct 31, 2017·10 cites·27 claims
- 1295US9159408B2Memory element with a reactive metal layerUNITY SEMICONDUCTOR CORP·Filed 2014·Granted Oct 13, 2015·12 cites·15 claims
- 1395US8675389B2Memory element with a reactive metal layerCHEVALLIER CHRISTOPHE·Filed 2011·Granted Mar 18, 2014·13 cites·28 claims
- 1495US7889539B2Multi-resistive state memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Feb 15, 2011·19 cites·20 claims
- 1595US7633790B2Multi-resistive state memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2008·Granted Dec 15, 2009·23 cites·8 claims
- 1695US4577391AMethod of manufacturing CMOS devicesMONOLITHIC MEMORIES INC·Filed 1984·Granted Mar 25, 1986·100 cites·10 claims
- 1794US7394679B2Multi-resistive state element with reactive metalUNITY SEMICONDUCTOR CORP·Filed 2006·Granted Jul 1, 2008·20 cites·17 claims
- 1894US7071008B2Multi-resistive state material that uses dopantsUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jul 4, 2006·69 cites·22 claims
- 1994US7038935B22-terminal trapped charge memory device with voltage switchable multi-level resistanceUNITY SEMICONDUCTOR CORP·Filed 2003·Granted May 2, 2006·85 cites·46 claims
- 2093US8062942B2Method for fabricating multi-resistive state memory devicesRINERSON DARRELL·Filed 2008·Granted Nov 22, 2011·17 cites·19 claims
- 2193US6873004B1Virtual ground single transistor memory cell, memory array incorporating same, and method of operation thereofNEXFLASH TECHNOLOGIES INC·Filed 2003·Granted Mar 29, 2005·97 cites·14 claims
- 2293US6850429B2Cross point memory array with memory plugs exhibiting a characteristic hysteresisUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Feb 1, 2005·73 cites·16 claims
- 2392US10340312B2Memory element with a reactive metal layerHEFEI RELIANCE MEMORY LTD·Filed 2017·Granted Jul 2, 2019·6 cites·20 claims
- 2492US7082052B2Multi-resistive state element with reactive metalUNITY SEMICONDUCTOR CORP·Filed 2004·Granted Jul 25, 2006·35 cites·15 claims
- 2591US6798685B2Multi-output multiplexorUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Sep 28, 2004·60 cites·23 claims
- 2690US6972985B2Memory element having islandsUNITY SEMICONDUCTOR CORP·Filed 2004·Granted Dec 6, 2005·55 cites·13 claims
- 2789US7439082B2Conductive memory stack with non-uniform widthUNITY SEMICONDUCTOR CORP·Filed 2006·Granted Oct 21, 2008·20 cites·1 claims
- 2889US7326979B2Resistive memory device with a treated interfaceUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Feb 5, 2008·51 cites·8 claims
- 2988US5313429AMemory circuit with pumped voltage for erase and program operationsCATALYST SEMICONDUCTOR INC·Filed 1992·Granted May 17, 1994·67 cites·24 claims
- 3088US5185718AMemory array architecture for flash memoryCATALYST SEMICONDUCTOR CORP·Filed 1991·Granted Feb 9, 1993·75 cites·8 claims
- 3187US7042035B2Memory array with high temperature wiringUNITY SEMICONDUCTOR CORP·Filed 2004·Granted May 9, 2006·45 cites·47 claims
- 3287US6747899B2Method and apparatus for multiple byte or page mode programming of a flash memory arrayNEXFLASH TECHNOLOGIES INC·Filed 2001·Granted Jun 8, 2004·55 cites·11 claims
- 3386US6731544B2Method and apparatus for multiple byte or page mode programming of a flash memory arrayNEXFLASH TECHNOLOGIES INC·Filed 2001·Granted May 4, 2004·45 cites·11 claims
- 3484US5033023AHigh density EEPROM cell and process for making the cellCATALYST SEMICONDUCTOR INC·Filed 1988·Granted Jul 16, 1991·51 cites·15 claims
- 3582US7528405B2Conductive memory stack with sidewallUNITY SEMICONDUCTOR CORP·Filed 2007·Granted May 5, 2009·9 cites·11 claims
- 3681US4861730AProcess for making a high density split gate nonvolatile memory cellCATALYST SEMICONDUCTOR INC·Filed 1988·Granted Aug 29, 1989·59 cites·3 claims
- 3779US7186569B2Conductive memory stack with sidewallUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Mar 6, 2007·20 cites·21 claims
- 3877US6909632B2Multiple modes of operation in a cross point arrayUNITY SEMICONDUCTOR CORP·Filed 2004·Granted Jun 21, 2005·21 cites·8 claims
- 3974US11502249B2Memory element with a reactive metal layerHEFEI RELIANCE MEMORY LTD·Filed 2020·Granted Nov 15, 2022·0 cites·19 claims
- 4072US4894802ANonvolatile memory cell for eeprom including a floating gate to drain tunnel area positioned away from the channel region to prevent trapping of electrons in the gate oxide during cell eraseCATALYST SEMICONDUCTOR INC·Filed 1988·Granted Jan 16, 1990·28 cites·3 claims
- 4170US5969397ALow defect density composite dielectricTEXAS INSTRUMENTS INC·Filed 1997·Granted Oct 19, 1999·41 cites·16 claims
- 4267US7847330B2Four vertically stacked memory layers in a non-volatile re-writeable memory deviceUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Dec 7, 2010·4 cites·16 claims
- 4366US8611130B2Method for fabricating multi-resistive state memory devicesRINERSON DARRELL·Filed 2011·Granted Dec 17, 2013·1 cites·28 claims
- 4464US7063984B2Low temperature deposition of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuitsUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jun 20, 2006·10 cites·36 claims
- 4562US10833125B2Memory element with a reactive metal layerHEFEI RELIANCE MEMORY LTD·Filed 2019·Granted Nov 10, 2020·0 cites·19 claims
- 4649US2011186803A1Multi-resistive state memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2011·Application pending·0 cites
- 4744US2011080767A1Integrated circuit including four layers of vertically stacked embedded re-writeable non-volatile two-terminal memoryUNITY SEMICONDUCTOR CORP·Filed 2010·Application pending·0 cites
- 4839US6728140B2Threshold voltage convergenceNEXFLASH TECHNOLOGIES INC·Filed 2001·Granted Apr 27, 2004·2 cites·51 claims
- 4929US6562724B1Self-aligned stack formationTEXAS INSTRUMENTS INC·Filed 1998·Granted May 13, 2003·1 cites·7 claims
- 5029US2001038131A1Using an elevated silicide as diffusion source for deep sub-micron and beyond cmosFiled 1999·Application pending·0 cites
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