Assignee
UNITY SEMICONDUCTOR CORP
205 granted patents·25 pending applications·5,848 citations·filing 2002–2022
Top patents by PatentIndex Score
230 records- 0199US7902868B2Field programmable gate arrays using resistivity sensitive memoriesUNITY SEMICONDUCTOR CORP·Filed 2010·Granted Mar 8, 2011·57 cites·8 claims
- 0299US7898841B2Preservation circuit and methods to maintain values representing data in one or more layers of memoryUNITY SEMICONDUCTOR CORP·Filed 2010·Granted Mar 1, 2011·49 cites·28 claims
- 0399US7719876B2Preservation circuit and methods to maintain values representing data in one or more layers of memoryUNITY SEMICONDUCTOR CORP·Filed 2008·Granted May 18, 2010·239 cites·5 claims
- 0499US6753561B1Cross point memory array using multiple thin filmsUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Jun 22, 2004·425 cites·34 claims
- 0598US8848425B2Conductive metal oxide structures in non volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2013·Granted Sep 30, 2014·59 cites·20 claims
- 0698US8045364B2Non-volatile memory device ion barrierUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Oct 25, 2011·121 cites·32 claims
- 0798US7701791B2Low read current architecture for memoryUNITY SEMICONDUCTOR CORP·Filed 2007·Granted Apr 20, 2010·73 cites·15 claims
- 0898US7538338B2Memory using variable tunnel barrier widthsUNITY SEMICONDUCTOR CORP·Filed 2004·Granted May 26, 2009·144 cites·30 claims
- 0998US7379364B2Sensing a signal in a two-terminal memory array having leakage currentUNITY SEMICONDUCTOR CORP·Filed 2006·Granted May 27, 2008·99 cites·24 claims
- 1098US7372753B1Two-cycle sensing in a two-terminal memory array having leakage currentUNITY SEMICONDUCTOR CORP·Filed 2006·Granted May 13, 2008·109 cites·25 claims
- 1198US7149108B2Memory array of a non-volatile RAMUNITY SEMICONDUCTOR CORP·Filed 2005·Granted Dec 12, 2006·73 cites·26 claims
- 1298US7054183B2Adaptive programming technique for a re-writable conductive memory deviceUNITY SEMICONDUCTOR CORP·Filed 2005·Granted May 30, 2006·104 cites·8 claims
- 1398US7020006B2Discharge of conductive array lines in fast memoryUNITY SEMICONDUCTOR CORP·Filed 2004·Granted Mar 28, 2006·195 cites·43 claims
- 1498US6965137B2Multi-layer conductive memory deviceUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Nov 15, 2005·168 cites·45 claims
- 1598US6859382B2Memory array of a non-volatile ramUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Feb 22, 2005·133 cites·15 claims
- 1698US6834008B2Cross point memory array using multiple modes of operationUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Dec 21, 2004·161 cites·17 claims
- 1797US9312307B2Vertical cross point arrays for ultra high density memory applicationsUNITY SEMICONDUCTOR CORP·Filed 2014·Granted Apr 12, 2016·13 cites·20 claims
- 1897US9117495B2Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variationsUNITY SEMICONDUCTOR CORP·Filed 2013·Granted Aug 25, 2015·21 cites·18 claims
- 1997US8363443B2Circuits and techniques to compensate data signals for variations of parameters affecting memory cells in cross-point arraysUNITY SEMICONDUCTOR CORP·Filed 2011·Granted Jan 29, 2013·28 cites·24 claims
- 2097US7888711B2Continuous plane of thin-film materials for a two-terminal cross-point memoryUNITY SEMICONDUCTOR CORP·Filed 2010·Granted Feb 15, 2011·41 cites·20 claims
- 2197US7884349B2Selection device for re-writable memoryUNITY SEMICONDUCTOR CORP·Filed 2008·Granted Feb 8, 2011·76 cites·39 claims
- 2297US7742323B2Continuous plane of thin-film materials for a two-terminal cross-point memoryUNITY SEMICONDUCTOR CORP·Filed 2007·Granted Jun 22, 2010·56 cites·31 claims
- 2397US7400006B1Conductive memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2006·Granted Jul 15, 2008·58 cites·24 claims
- 2497US7327600B2Storage controller for multiple configurations of vertical memoryUNITY SEMICONDUCTOR CORP·Filed 2006·Granted Feb 5, 2008·86 cites·13 claims
- 2597US7067862B2Conductive memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jun 27, 2006·142 cites·43 claims
- 2697US6917539B2High-density NVRAMUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jul 12, 2005·134 cites·52 claims
- 2797US6870755B2Re-writable memory with non-linear memory elementUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Mar 22, 2005·137 cites·18 claims
- 2897US6856536B2Non-volatile memory with a single transistor and resistive memory elementUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Feb 15, 2005·170 cites·8 claims
- 2997US6836421B2Line drivers that fit within a specified line pitchUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Dec 28, 2004·149 cites·21 claims
- 3096US9570515B2Memory element with a reactive metal layerUNITY SEMICONDUCTOR CORP·Filed 2015·Granted Feb 14, 2017·12 cites·19 claims
- 3196US9390796B2Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variationsUNITY SEMICONDUCTOR CORP·Filed 2015·Granted Jul 12, 2016·15 cites·20 claims
- 3296US7985963B2Memory using variable tunnel barrier widthsUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Jul 26, 2011·36 cites·33 claims
- 3396US6970375B2Providing a reference voltage to a cross point memory arrayUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Nov 29, 2005·108 cites·16 claims
- 3496US6940744B2Adaptive programming technique for a re-writable conductive memory deviceUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Sep 6, 2005·100 cites·37 claims
- 3595US9806130B2Memory element with a reactive metal layerUNITY SEMICONDUCTOR CORP·Filed 2016·Granted Oct 31, 2017·10 cites·27 claims
- 3695US9691480B2Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variationsUNITY SEMICONDUCTOR CORP·Filed 2016·Granted Jun 27, 2017·12 cites·19 claims
- 3795US9159408B2Memory element with a reactive metal layerUNITY SEMICONDUCTOR CORP·Filed 2014·Granted Oct 13, 2015·12 cites·15 claims
- 3895US8003511B2Memory cell formation using ion implant isolated conductive metal oxideUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Aug 23, 2011·26 cites·43 claims
- 3995US7897951B2Continuous plane of thin-film materials for a two-terminal cross-point memoryUNITY SEMICONDUCTOR CORP·Filed 2007·Granted Mar 1, 2011·27 cites·14 claims
- 4095US7889539B2Multi-resistive state memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Feb 15, 2011·19 cites·20 claims
- 4195US7830701B2Contemporaneous margin verification and memory access for memory cells in cross point memory arraysUNITY SEMICONDUCTOR CORP·Filed 2008·Granted Nov 9, 2010·27 cites·17 claims
- 4295US7633790B2Multi-resistive state memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2008·Granted Dec 15, 2009·23 cites·8 claims
- 4395US7227775B2Two terminal memory array having reference cellsUNITY SEMICONDUCTOR CORP·Filed 2006·Granted Jun 5, 2007·30 cites·18 claims
- 4495US6992922B2Cross point memory array exhibiting a characteristic hysteresisUNITY SEMICONDUCTOR CORP·Filed 2005·Granted Jan 31, 2006·36 cites·11 claims
- 4595US6850455B2Multiplexor having a reference voltage on unselected linesUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Feb 1, 2005·106 cites·25 claims
- 4694US11367751B2Vertical cross-point arrays for ultra-high-density memory applicationsUNITY SEMICONDUCTOR CORP·Filed 2020·Granted Jun 21, 2022·2 cites·20 claims
- 4794US7593284B2Memory emulation using resistivity-sensitive memoryUNITY SEMICONDUCTOR CORP·Filed 2007·Granted Sep 22, 2009·26 cites·14 claims
- 4894US7436723B2Method for two-cycle sensing in a two-terminal memory array having leakage currentUNITY SEMICONDUCTOR CORP·Filed 2008·Granted Oct 14, 2008·30 cites·25 claims
- 4994US7394679B2Multi-resistive state element with reactive metalUNITY SEMICONDUCTOR CORP·Filed 2006·Granted Jul 1, 2008·20 cites·17 claims
- 5094US7075817B2Two terminal memory array having reference cellsUNITY SEMICONDUCTOR CORP·Filed 2004·Granted Jul 11, 2006·66 cites·27 claims
Showing the top 50 of 230 patent records by PatentIndex Score.
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