Inventor · disambiguated record
Katsunori Onishi
Also filed as: ONISHI KATSUNORI
25 granted patents·9 pending applications·96 citations·filing 1985–2019
94Inventor score
Top patents by PatentIndex Score
34 records- 0192US10056303B1Integration scheme for gate height control and void free RMG fillGLOBALFOUNDRIES INC·Filed 2017·Granted Aug 21, 2018·8 cites·10 claims
- 0288US7714358B2Semiconductor structure and method of forming the structureIBM·Filed 2007·Granted May 11, 2010·12 cites·19 claims
- 0385US9136321B1Low energy ion implantation of a junction butting regionIBM·Filed 2014·Granted Sep 15, 2015·6 cites·12 claims
- 0480US10242982B2Method for forming a protection device having an inner contact spacer and the resulting devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Mar 26, 2019·3 cites·18 claims
- 0580US9761679B2Performance optimized gate structures having memory device and logic device, the memory device with silicided source/drain regions that are raised with respect to silicided source/drain regions of the logic deviceIBM·Filed 2016·Granted Sep 12, 2017·2 cites·13 claims
- 0680US7932144B2Semiconductor structure and method of forming the structureIBM·Filed 2010·Granted Apr 26, 2011·4 cites·19 claims
- 0779US7610590B2Optical disc apparatusFUNAI ELECTRIC CO·Filed 2006·Granted Oct 27, 2009·5 cites·4 claims
- 0873US7160771B2Forming gate oxides having multiple thicknessesIBM·Filed 2003·Granted Jan 9, 2007·20 cites·7 claims
- 0966US11598086B2Joint structure for H-beamBUILDING SYSTEM DESIGN CO LTD·Filed 2018·Granted Mar 7, 2023·3 cites·9 claims
- 1063US7767579B2Protection of SiGe during etch and clean operationsIBM·Filed 2007·Granted Aug 3, 2010·1 cites·20 claims
- 1160US9240482B2Asymmetric stressor DRAMGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 19, 2016·1 cites·20 claims
- 1259US10658363B2Cut inside replacement metal gate trench to mitigate N-P proximity effectGLOBALFOUNDRIES INC·Filed 2019·Granted May 19, 2020·0 cites·15 claims
- 1359US9455195B2Method of forming performance optimized gate structures by silicidizing lowered source and drain regionsIBM·Filed 2014·Granted Sep 27, 2016·0 cites·15 claims
- 1456US10354928B2Integration scheme for gate height control and void free RMG fillGLOBALFOUNDRIES INC·Filed 2018·Granted Jul 16, 2019·0 cites·11 claims
- 1556US9735058B2Method of forming performance optimized gate structures by silicidizing lowered source and drain regionsIBM·Filed 2016·Granted Aug 15, 2017·0 cites·8 claims
- 1654US10446550B2Cut inside replacement metal gate trench to mitigate N-P proximity effectGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 15, 2019·0 cites·17 claims
- 1753US5592000ANon-volatile semiconductor memory device programmable and erasable at low voltageMACRONIX INT CO LTD·Filed 1995·Granted Jan 7, 1997·15 cites·3 claims
- 1852US4690348AApparatus for winding a sheet-formed articleINOUE MTP KK·Filed 1985·Granted Sep 1, 1987·9 cites·20 claims
- 1950US7231647B2Disk apparatusFUNAI ELECTRIC CO·Filed 2004·Granted Jun 12, 2007·1 cites·6 claims
- 2048US2015348974A1Low energy ion implantation of a junction butting regionGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
- 2146US2009146223A1Process and method to lower contact resistanceIBM·Filed 2007·Application pending·0 cites
- 2243US2015348972A1Asymmetric stressor dramIBM·Filed 2014·Application pending·0 cites
- 2341US2008188089A1Method for reducing top notching effects in pre-doped gate structuresIBM·Filed 2007·Application pending·0 cites
- 2440US10741668B2Short channel and long channel devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Aug 11, 2020·0 cites·18 claims
- 2539US7781239B2Semiconductor device defect type determination method and structureIBM·Filed 2008·Granted Aug 24, 2010·0 cites·11 claims
- 2638US2019131424A1Methods for forming ic structure having recessed gate spacers and related ic structuresGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
- 2737US2011199885A1Disk UnitFUNAI ELECTRIC CO·Filed 2011·Application pending·0 cites
- 2836US2019096679A1Gate stack processes and structuresGLOBALFOUNDRIES INC·Filed 2017·Application pending·0 cites
- 2936US2020056370A1Coupling structure and construction structure bodyBUILDING SYSTEM DESIGN CO LTD·Filed 2018·Application pending·0 cites
- 3035US2017338325A1Method, apparatus and system for providing nitride cap layer in replacement metal gate structureGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
- 3133US6057979AMagnetic tape cassette with fail-safe inserting apparatusFUNAI ELECTRIC CO·Filed 1997·Granted May 2, 2000·2 cites·3 claims
- 3233US6021018ALoading mechanism for a video cassetteFUNAI ELECTRIC CO·Filed 1998·Granted Feb 1, 2000·2 cites·4 claims
- 3331US6111713ARecording-medium mis-recording preventing mechanismFUNAI ELECTRIC CO·Filed 1998·Granted Aug 29, 2000·1 cites·10 claims
- 3429US5975787ADevice for securing a part to a chassisFUNAI ELECTRIC CO·Filed 1997·Granted Nov 2, 1999·1 cites·5 claims
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