Inventor · disambiguated record
Yoshikazu Tsunemine
Also filed as: TSUNEMINE YOSHIKAZU
14 granted patents·5 pending applications·279 citations·filing 1996–2018
93Inventor score
Top patents by PatentIndex Score
19 records- 0183US5699291ASemiconductor memory device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Dec 16, 1997·64 cites·12 claims
- 0282US6078072ASemiconductor device having a capacitorMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jun 20, 2000·49 cites·4 claims
- 0380US6746876B2Capacitor manufacturing method having dielectric formed before electrodeRENESAS TECH CORP·Filed 2002·Granted Jun 8, 2004·27 cites·14 claims
- 0476US5981331AMethod of manufacturing a semiconductor memory device with a high dielectric constant capacitorMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Nov 9, 1999·47 cites·6 claims
- 0573US6049103ASemiconductor capacitorMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Apr 11, 2000·30 cites·2 claims
- 0668US6384443B1Stacked capacitor and method of manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted May 7, 2002·12 cites·6 claims
- 0766US9929042B2Semiconductor device having a discontinued part between a first insulating film and a second insulating filmRENESAS ELECTRONICS CORP·Filed 2016·Granted Mar 27, 2018·1 cites·15 claims
- 0865US6278150B1Conductive layer connecting structure and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 21, 2001·30 cites·18 claims
- 0955US6501113B2Semiconductor device with capacitor using high dielectric constant film or ferroelectric filmMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Dec 31, 2002·5 cites·6 claims
- 1053US2018358301A1Semiconductor device and its manufacturing methodRENESAS ELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 1152US10096554B2Semiconductor device having an epitaxial layer and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2017·Granted Oct 9, 2018·0 cites·7 claims
- 1250US2018174900A1Semiconductor device having a discontinued part between a first insulating film and second insulating filmRENESAS ELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 1349US5939744ASemiconductor device with x-ray absorption layerMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 17, 1999·10 cites·4 claims
- 1436US6853026B2Semiconductor deviceRENESAS TECH CORP·Filed 2002·Granted Feb 8, 2005·0 cites·3 claims
- 1536US2002125524A1Semiconductor device and method of manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 1635US6670232B2Providing a conductive material in an openingRENESAS TECH CORP·Filed 2002·Granted Dec 30, 2003·0 cites·11 claims
- 1735US6144053ASemiconductor device having a capacitor with a high dielectric constant filmMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Nov 7, 2000·4 cites·14 claims
- 1834US2016118343A1Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 1929US2001045591A1Semiconductor device and method of manufacturing the sameFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →