Inventor · disambiguated record
Johannes Von Kluge
Also filed as: VON KLUGE JOHANNES
7 granted patents·4 pending applications·10 citations·filing 2007–2015
76Inventor score
Top patents by PatentIndex Score
11 records- 0172US7763514B2Method of manufacturing a transistor and memory cell arrayQIMONDA AG·Filed 2007·Granted Jul 27, 2010·5 cites·9 claims
- 0270US9054041B2Methods for etching dielectric materials in the fabrication of integrated circuitsGLOBALFOUNDRIES INC·Filed 2013·Granted Jun 9, 2015·2 cites·5 claims
- 0368US8115277B2Integrated circuit having a material structured by a projectionVON KLUGE JOHANNES·Filed 2010·Granted Feb 14, 2012·3 cites·20 claims
- 0452US7888230B2Method of making an integrated circuit including structuring a materialQIMONDA AG·Filed 2008·Granted Feb 15, 2011·0 cites·20 claims
- 0550US9209174B2Circuit element including a layer of a stress-creating material providing a variable stress and method for the formation thereofGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 8, 2015·0 cites·26 claims
- 0644US9537006B2Circuit element including a layer of a stress-creating material providing a variable stressGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 3, 2017·0 cites·17 claims
- 0744US8716136B1Method of forming a semiconductor structure including a wet etch process for removing silicon nitrideGLOBALFOUNDRIES INC·Filed 2012·Granted May 6, 2014·0 cites·19 claims
- 0843US2015235906A1Methods for etching dielectric materials in the fabrication of integrated circuitsGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
- 0941US2009321805A1Insulator material over buried conductive lineQIMONDA AG·Filed 2008·Application pending·0 cites
- 1036US2009176368A1Manufacturing method for an integrated circuit structure comprising a selectively deposited oxide layerWU NAN·Filed 2008·Application pending·0 cites
- 1129US2014042549A1Methods of forming stress-inducing layers on semiconductor devicesVON KLUGE JOHANNES·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →