Inventor · disambiguated record
Mengyu Pan
Also filed as: PAN MENGYU
6 granted patents·1 pending application·33 citations·filing 2006–2018
81Inventor score
Top patents by PatentIndex Score
7 records- 0183US8053315B2Method to manufacture split gate with high density plasma oxide layer as inter-polysilicon insulation layerALPHA & OMEGA SEMICONDUCTOR·Filed 2009·Granted Nov 8, 2011·10 cites·10 claims
- 0281US8084304B2Method for preventing gate oxide damage of a trench MOSFET during wafer processing while adding an ESD protection module atopPAN MENGYU·Filed 2010·Granted Dec 27, 2011·9 cites·19 claims
- 0379US7585705B2Method for preventing gate oxide damage of a trench MOSFET during wafer processing while adding an ESD protection module atopALPHA & OMEGA SEMICONDUCTOR·Filed 2007·Granted Sep 8, 2009·8 cites·19 claims
- 0476US10038089B2SGT MOSFET with adjustable CRSS and CISSHU JUN·Filed 2015·Granted Jul 31, 2018·2 cites·10 claims
- 0571US7728385B2Trench MOSFET with an ONO insulating layer sandwiched between an ESD protection module atop and a semiconductor substrateALPHA & OMEGA SEMICONDUCTOR·Filed 2009·Granted Jun 1, 2010·4 cites·2 claims
- 0649US10923588B2SGT MOSFET with adjustable CRSS and CISSHUNTECK SEMICONDUCTOR SHANGHAI CO LTD·Filed 2018·Granted Feb 16, 2021·0 cites·10 claims
- 0745US2008150013A1Split gate formation with high density plasma (HDP) oxide layer as inter-polysilicon insulation layerALPHA & OMEGA SEMICONDUCTOR·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →