Inventor · disambiguated record
Unoh Kwon
Also filed as: KWON UNOH
94 granted patents·15 pending applications·947 citations·filing 2009–2024
99Inventor score
Top patents by PatentIndex Score
109 records- 0199US9748145B1Semiconductor devices with varying threshold voltage and fabrication methods thereofGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 29, 2017·494 cites·17 claims
- 0296US9613870B2Gate stack formed with interrupted deposition processes and laser annealingIBM·Filed 2015·Granted Apr 4, 2017·13 cites·20 claims
- 0396US9613866B2Gate stack formed with interrupted deposition processes and laser annealingIBM·Filed 2016·Granted Apr 4, 2017·11 cites·13 claims
- 0496US9553092B2Alternative threshold voltage scheme via direct metal gate patterning for high performance CMOS FinFETsGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 24, 2017·15 cites·11 claims
- 0596US9397199B1Methods of forming multi-Vt III-V TFET devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 19, 2016·14 cites·1 claims
- 0696US8647972B1Multi-layer work function metal replacement gateANDO TAKASHI·Filed 2012·Granted Feb 11, 2014·40 cites·19 claims
- 0795US9343372B1Metal stack for reduced gate resistanceGLOBALFOUNDRIES INC·Filed 2014·Granted May 17, 2016·23 cites·20 claims
- 0894US9905476B2Alternative threshold voltage scheme via direct metal gate patterning for high performance CMOS FinFETsGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 27, 2018·9 cites·20 claims
- 0994US9548381B1Method and structure for III-V nanowire tunnel FETsGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 17, 2017·11 cites·8 claims
- 1094US9330938B2Method of patterning dopant films in high-k dielectrics in a soft mask integration schemeIBM·Filed 2014·Granted May 3, 2016·12 cites·12 claims
- 1194US8420473B2Replacement gate devices with barrier metal for simultaneous processingANDO TAKASHI·Filed 2010·Granted Apr 16, 2013·18 cites·21 claims
- 1294US8232148B2Structure and method to make replacement metal gate and contact metalLI ZHENGWEN·Filed 2010·Granted Jul 31, 2012·19 cites·12 claims
- 1394US7838908B2Semiconductor device having dual metal gates and method of manufactureIBM·Filed 2009·Granted Nov 23, 2010·28 cites·14 claims
- 1493US9589806B1Integrated circuit with replacement gate stacks and method of forming sameGLOBALFOUNDRIES INC·Filed 2015·Granted Mar 7, 2017·10 cites·13 claims
- 1593US9105745B2Fabrication of low threshold voltage and inversion oxide thickness scaling for a high-k metal gate p-type MOSFETIBM·Filed 2012·Granted Aug 11, 2015·13 cites·10 claims
- 1693US8629014B2Replacement metal gate structures for effective work function controlKWON UNOH·Filed 2010·Granted Jan 14, 2014·18 cites·11 claims
- 1791US8912607B2Replacement metal gate structures providing independent control on work function and gate leakage currentIBM·Filed 2013·Granted Dec 16, 2014·11 cites·20 claims
- 1890US9515164B2Methods and structure to form high K metal gate stack with single work-function metalIBM·Filed 2014·Granted Dec 6, 2016·7 cites·20 claims
- 1990US9231072B2Multi-composition gate dielectric field effect transistorsIBM·Filed 2014·Granted Jan 5, 2016·10 cites·10 claims
- 2090US8581351B2Replacement gate with reduced gate leakage currentANDO TAKASHI·Filed 2011·Granted Nov 12, 2013·10 cites·20 claims
- 2189US9484427B2Field effect transistors having multiple effective work functionsGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 1, 2016·7 cites·10 claims
- 2289US7691701B1Method of forming gate stack and structure thereofIBM·Filed 2009·Granted Apr 6, 2010·16 cites·27 claims
- 2388US8759172B2Etch stop layer formation in metal gate processLI ZHENGWEN·Filed 2012·Granted Jun 24, 2014·7 cites·11 claims
- 2488US8450169B2Replacement metal gate structures providing independent control on work function and gate leakage currentKWON UNOH·Filed 2010·Granted May 28, 2013·10 cites·19 claims
- 2587US9824930B2Method of patterning dopant films in high-k dielectrics in a soft mask integration schemeIBM·Filed 2016·Granted Nov 21, 2017·3 cites·10 claims
- 2685US9799656B2Semiconductor device having a gate stack with tunable work functionIBM·Filed 2017·Granted Oct 24, 2017·3 cites·11 claims
- 2785US8354313B2Method to optimize work function in complementary metal oxide semiconductor (CMOS) structuresIBM·Filed 2010·Granted Jan 15, 2013·8 cites·12 claims
- 2884US9318336B2Non-volatile memory structure employing high-k gate dielectric and metal gateBREIL NICOLAS·Filed 2011·Granted Apr 19, 2016·6 cites·19 claims
- 2984US9224826B2Multiple thickness gate dielectrics for replacement gate field effect transistorsIBM·Filed 2014·Granted Dec 29, 2015·6 cites·10 claims
- 3083US8941177B2Semiconductor devices having different gate oxide thicknessesADAMS CHARLOTTE DEWAN·Filed 2012·Granted Jan 27, 2015·8 cites·10 claims
- 3183US8659077B1Multi-layer work function metal replacement gateANDO TAKASHI·Filed 2012·Granted Feb 25, 2014·6 cites·18 claims
- 3283US8343839B2Scaled equivalent oxide thickness for field effect transistor devicesIBM·Filed 2010·Granted Jan 1, 2013·4 cites·10 claims
- 3382US9627508B2Replacement channel TFETGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 18, 2017·3 cites·20 claims
- 3482US8283217B2Prevention of oxygen absorption into high-K gate dielectric of silicon-on-insulator based finFET devicesGUO DECHAO·Filed 2010·Granted Oct 9, 2012·6 cites·15 claims
- 3581US9583400B1Gate stack with tunable work functionIBM·Filed 2016·Granted Feb 28, 2017·3 cites·19 claims
- 3680US9087722B2Semiconductor devices having different gate oxide thicknessesIBM·Filed 2014·Granted Jul 21, 2015·4 cites·3 claims
- 3779US8735996B2Scavenging metal stack for a high-K gate dielectricANDO TAKASHI·Filed 2012·Granted May 27, 2014·4 cites·7 claims
- 3879US8643115B2Structure and method of Tinv scaling for high κ metal gate technologyCHUDZIK MICHAEL P·Filed 2011·Granted Feb 4, 2014·4 cites·16 claims
- 3979US8420491B2Structure and method for replacement metal gate field effect transistorsUTOMO HENRY K·Filed 2010·Granted Apr 16, 2013·7 cites·12 claims
- 4078US9293461B2Replacement metal gate structures for effective work function controlGLOBALFOUNDRIES INC·Filed 2013·Granted Mar 22, 2016·4 cites·9 claims
- 4178US8546211B2Replacement gate having work function at valence band edgeWONG KEITH KWONG HON·Filed 2010·Granted Oct 1, 2013·4 cites·16 claims
- 4277US9660027B2Expitaxially regrown heterostructure nanowire lateral tunnel field effect transistorGLOBALFOUNDRIES INC·Filed 2015·Granted May 23, 2017·2 cites·10 claims
- 4377US8716118B2Replacement gate structure for transistor with a high-K gate stackANDO TAKASHI·Filed 2012·Granted May 6, 2014·4 cites·9 claims
- 4475US9997361B2Gate stack formed with interrupted deposition processes and laser annealingIBM·Filed 2017·Granted Jun 12, 2018·1 cites·20 claims
- 4575US9997610B2Gate stack formed with interrupted deposition processes and laser annealingIBM·Filed 2017·Granted Jun 12, 2018·1 cites·20 claims
- 4674US10985075B2Gate formation scheme for n-type and p-type transistors having separately tuned threshold voltagesIBM·Filed 2018·Granted Apr 20, 2021·1 cites·6 claims
- 4774US10354999B2Structure and method to suppress work function effect by patterning boundary proximity in replacement metal gateIBM·Filed 2017·Granted Jul 16, 2019·1 cites·10 claims
- 4874US8557649B2Method for controlling structure heightVENIGALLA RAJASEKHAR·Filed 2011·Granted Oct 15, 2013·4 cites·5 claims
- 4973US9721842B2Method of patterning dopant films in high-k dielectrics in a soft mask integration schemeIBM·Filed 2016·Granted Aug 1, 2017·1 cites·12 claims
- 5073US9087784B2Structure and method of Tinv scaling for high k metal gate technologyIBM·Filed 2014·Granted Jul 21, 2015·2 cites·16 claims
Showing the top 50 of 109 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →