Inventor · disambiguated record
Siddarth A. Krishnan
Also filed as: KRISHNAN SIDDARTH · KRISHNAN SIDDARTH A
86 granted patents·20 pending applications·875 citations·filing 2008–2024
99Inventor score
Top patents by PatentIndex Score
106 records- 0199US9748145B1Semiconductor devices with varying threshold voltage and fabrication methods thereofGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 29, 2017·494 cites·17 claims
- 0298US9502307B1Forming a semiconductor structure for reduced negative bias temperature instabilityIBM·Filed 2015·Granted Nov 22, 2016·36 cites·8 claims
- 0397US9741720B1Higher ‘K’ gate dielectric cap for replacement metal gate (RMG) FINFET devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 22, 2017·22 cites·18 claims
- 0496US9679810B1Integrated circuit having improved electromigration performance and method of forming sameGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 13, 2017·18 cites·15 claims
- 0596US9553092B2Alternative threshold voltage scheme via direct metal gate patterning for high performance CMOS FinFETsGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 24, 2017·15 cites·11 claims
- 0696US9397199B1Methods of forming multi-Vt III-V TFET devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 19, 2016·14 cites·1 claims
- 0794US9905476B2Alternative threshold voltage scheme via direct metal gate patterning for high performance CMOS FinFETsGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 27, 2018·9 cites·20 claims
- 0894US9548381B1Method and structure for III-V nanowire tunnel FETsGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 17, 2017·11 cites·8 claims
- 0994US9330938B2Method of patterning dopant films in high-k dielectrics in a soft mask integration schemeIBM·Filed 2014·Granted May 3, 2016·12 cites·12 claims
- 1094US8420473B2Replacement gate devices with barrier metal for simultaneous processingANDO TAKASHI·Filed 2010·Granted Apr 16, 2013·18 cites·21 claims
- 1194US7838908B2Semiconductor device having dual metal gates and method of manufactureIBM·Filed 2009·Granted Nov 23, 2010·28 cites·14 claims
- 1293US9576958B1Forming a semiconductor structure for reduced negative bias temperature instabilityIBM·Filed 2016·Granted Feb 21, 2017·6 cites·14 claims
- 1391US10074574B2Integrated circuit with replacement gate stacks and method of forming sameIBM·Filed 2017·Granted Sep 11, 2018·5 cites·19 claims
- 1491US8912607B2Replacement metal gate structures providing independent control on work function and gate leakage currentIBM·Filed 2013·Granted Dec 16, 2014·11 cites·20 claims
- 1590US9515164B2Methods and structure to form high K metal gate stack with single work-function metalIBM·Filed 2014·Granted Dec 6, 2016·7 cites·20 claims
- 1690US8581351B2Replacement gate with reduced gate leakage currentANDO TAKASHI·Filed 2011·Granted Nov 12, 2013·10 cites·20 claims
- 1789US9484427B2Field effect transistors having multiple effective work functionsGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 1, 2016·7 cites·10 claims
- 1889US7691701B1Method of forming gate stack and structure thereofIBM·Filed 2009·Granted Apr 6, 2010·16 cites·27 claims
- 1988US8759172B2Etch stop layer formation in metal gate processLI ZHENGWEN·Filed 2012·Granted Jun 24, 2014·7 cites·11 claims
- 2088US8450169B2Replacement metal gate structures providing independent control on work function and gate leakage currentKWON UNOH·Filed 2010·Granted May 28, 2013·10 cites·19 claims
- 2187US9824930B2Method of patterning dopant films in high-k dielectrics in a soft mask integration schemeIBM·Filed 2016·Granted Nov 21, 2017·3 cites·10 claims
- 2286US9748354B2Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereofAPPLIED MATERIALS INC·Filed 2016·Granted Aug 29, 2017·5 cites·20 claims
- 2386US8952460B2Germanium oxide free atomic layer deposition of silicon oxide and high-k gate dielectric on germanium containing channel for CMOS devicesIBM·Filed 2013·Granted Feb 10, 2015·7 cites·7 claims
- 2485US9799656B2Semiconductor device having a gate stack with tunable work functionIBM·Filed 2017·Granted Oct 24, 2017·3 cites·11 claims
- 2585US8354313B2Method to optimize work function in complementary metal oxide semiconductor (CMOS) structuresIBM·Filed 2010·Granted Jan 15, 2013·8 cites·12 claims
- 2685US7498271B1Nitrogen based plasma process for metal gate MOS deviceIBM·Filed 2008·Granted Mar 3, 2009·10 cites·2 claims
- 2784US9922884B2Integrated circuit with replacement gate stacks and method of forming sameIBM·Filed 2015·Granted Mar 20, 2018·3 cites·17 claims
- 2884US9412658B2Constrained nanosecond laser anneal of metal interconnect structuresIBM·Filed 2014·Granted Aug 9, 2016·7 cites·19 claims
- 2984US9318336B2Non-volatile memory structure employing high-k gate dielectric and metal gateBREIL NICOLAS·Filed 2011·Granted Apr 19, 2016·6 cites·19 claims
- 3083US11616195B2Dual oxide analog switch for neuromorphic switchingAPPLIED MATERIALS INC·Filed 2020·Granted Mar 28, 2023·1 cites·10 claims
- 3183US11127458B1Non-uniform state spacing in multi-state memory element for low-power operationAPPLIED MATERIALS INC·Filed 2020·Granted Sep 21, 2021·2 cites·20 claims
- 3283US8941177B2Semiconductor devices having different gate oxide thicknessesADAMS CHARLOTTE DEWAN·Filed 2012·Granted Jan 27, 2015·8 cites·10 claims
- 3382US11837285B2Bias temperature instability correction in memory arraysAPPLIED MATERIALS INC·Filed 2021·Granted Dec 5, 2023·1 cites·18 claims
- 3482US9627508B2Replacement channel TFETGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 18, 2017·3 cites·20 claims
- 3581US10553498B2Integrated circuit with replacement gate stacks and method of forming sameIBM·Filed 2017·Granted Feb 4, 2020·2 cites·20 claims
- 3681US9583400B1Gate stack with tunable work functionIBM·Filed 2016·Granted Feb 28, 2017·3 cites·19 claims
- 3781US8901706B2Thermally stable high-K tetragonal HFO2 layer within high aspect ratio deep trenchesCHUDZIK MICHAEL P·Filed 2012·Granted Dec 2, 2014·4 cites·14 claims
- 3880US9087722B2Semiconductor devices having different gate oxide thicknessesIBM·Filed 2014·Granted Jul 21, 2015·4 cites·3 claims
- 3980US7947549B2Gate effective-workfunction modification for CMOSIBM·Filed 2008·Granted May 24, 2011·7 cites·7 claims
- 4079US8643115B2Structure and method of Tinv scaling for high κ metal gate technologyCHUDZIK MICHAEL P·Filed 2011·Granted Feb 4, 2014·4 cites·16 claims
- 4177US9660027B2Expitaxially regrown heterostructure nanowire lateral tunnel field effect transistorGLOBALFOUNDRIES INC·Filed 2015·Granted May 23, 2017·2 cites·10 claims
- 4276US12178146B2Dual oxide analog switch for neuromorphic switchingAPPLIED MATERIALS INC·Filed 2023·Granted Dec 24, 2024·0 cites·19 claims
- 4376US11017856B1Soft reset for multi-level programming of memory cells in non-Von Neumann architecturesAPPLIED MATERIALS INC·Filed 2020·Granted May 25, 2021·1 cites·11 claims
- 4473US9721842B2Method of patterning dopant films in high-k dielectrics in a soft mask integration schemeIBM·Filed 2016·Granted Aug 1, 2017·1 cites·12 claims
- 4573US9704758B2Forming a semiconductor structure for reduced negative bias temperature instabilityIBM·Filed 2016·Granted Jul 11, 2017·1 cites·10 claims
- 4673US9087784B2Structure and method of Tinv scaling for high k metal gate technologyIBM·Filed 2014·Granted Jul 21, 2015·2 cites·16 claims
- 4773US8318565B2High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereofBU HUIMING·Filed 2010·Granted Nov 27, 2012·3 cites·10 claims
- 4872US10395993B2Methods and structure to form high K metal gate stack with single work-function metalIBM·Filed 2016·Granted Aug 27, 2019·1 cites·20 claims
- 4972US9960233B2Expitaxially regrown heterostructure nanowire lateral tunnel field effect transistorGLOBALFOUNDRIES INC·Filed 2017·Granted May 1, 2018·1 cites·20 claims
- 5071US8809176B2Replacement gate with reduced gate leakage currentIBM·Filed 2013·Granted Aug 19, 2014·2 cites·20 claims
Showing the top 50 of 106 patent records by PatentIndex Score.
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