Inventor · disambiguated record
Ashok Challa
Also filed as: CHALLA ASHOK
40 granted patents·3 pending applications·1,478 citations·filing 2000–2023
98Inventor score
Files withFAIRCHILD SEMICONDUCTOR25CHALLA ASHOK4SEMICONDUCTOR COMPONENTS IND LLC3YEDINAK JOSEPH A3BENCUYA IZAK2
Top patents by PatentIndex Score
43 records- 0199US7638841B2Power semiconductor devices and methods of manufactureFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Dec 29, 2009·106 cites·17 claims
- 0298US7982265B2Trenched shield gate power semiconductor devices and methods of manufactureFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Jul 19, 2011·81 cites·23 claims
- 0398US7393749B2Charge balance field effect transistorFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Jul 1, 2008·86 cites·14 claims
- 0498US7345342B2Power semiconductor devices and methods of manufactureFAIRCHILD SEMICONDUCTOR·Filed 2004·Granted Mar 18, 2008·402 cites·18 claims
- 0597US8304829B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsYEDINAK JOSEPH A·Filed 2009·Granted Nov 6, 2012·52 cites·28 claims
- 0697US8143124B2Methods of making power semiconductor devices with thick bottom oxide layerCHALLA ASHOK·Filed 2008·Granted Mar 27, 2012·148 cites·6 claims
- 0797US7625799B2Method of forming a shielded gate field effect transistorFAIRCHILD SEMICONDUCTOR·Filed 2009·Granted Dec 1, 2009·26 cites·18 claims
- 0897US7514322B2Shielded gate field effect transistorFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Apr 7, 2009·39 cites·18 claims
- 0997US7446374B2High density trench FET with integrated Schottky diode and method of manufactureFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Nov 4, 2008·78 cites·28 claims
- 1096US8803207B2Shielded gate field effect transistorsGREBS THOMAS E·Filed 2011·Granted Aug 12, 2014·26 cites·20 claims
- 1196US7768064B2Structure and method for improving shielded gate field effect transistorsFAIRCHILD SEMICONDUCTOR·Filed 2007·Granted Aug 3, 2010·33 cites·28 claims
- 1295US8592895B2Field effect transistor with source, heavy body region and shielded gateFAIRCHILD SEMICONDUCTOR·Filed 2012·Granted Nov 26, 2013·12 cites·20 claims
- 1395US7485532B2Method of forming trench gate FETs with reduced gate to drain chargeFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Feb 3, 2009·29 cites·19 claims
- 1495US7416948B2Trench FET with improved body to gate alignmentFAIRCHILD SEMICONDUCTOR·Filed 2006·Granted Aug 26, 2008·30 cites·44 claims
- 1595US7382019B2Trench gate FETs with reduced gate to drain chargeFAIRCHILD SEMICONDUCTOR·Filed 2005·Granted Jun 3, 2008·33 cites·23 claims
- 1694US7855415B2Power semiconductor devices having termination structures and methods of manufactureFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted Dec 21, 2010·51 cites·7 claims
- 1794US7713822B2Method of forming high density trench FET with integrated Schottky diodeFAIRCHILD SEMICONDUCTOR·Filed 2008·Granted May 11, 2010·31 cites·19 claims
- 1892US8963212B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsFAIRCHILD SEMICONDUCTOR·Filed 2013·Granted Feb 24, 2015·8 cites·23 claims
- 1992US8786045B2Power semiconductor devices having termination structuresCHALLA ASHOK·Filed 2010·Granted Jul 22, 2014·14 cites·20 claims
- 2092US6696726B1Vertical MOSFET with ultra-low resistance and low gate chargeFAIRCHILD SEMICONDUCTOR·Filed 2000·Granted Feb 24, 2004·60 cites·10 claims
- 2191US8742401B2Field effect transistor with gated and non-gated trenchesFAIRCHILD SEMICONDUCTOR·Filed 2013·Granted Jun 3, 2014·6 cites·21 claims
- 2290US8936985B2Methods related to power semiconductor devices with thick bottom oxide layersCHALLA ASHOK·Filed 2012·Granted Jan 20, 2015·6 cites·12 claims
- 2389US12051967B2Integrated transistor and resistor-diode-capacitor snubberSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Granted Jul 30, 2024·1 cites·20 claims
- 2488US8193581B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsYEDINAK JOSEPH A·Filed 2009·Granted Jun 5, 2012·10 cites·16 claims
- 2588US6683363B2Trench structure for semiconductor devicesFAIRCHILD SEMICONDUCTOR·Filed 2001·Granted Jan 27, 2004·51 cites·12 claims
- 2686US8564024B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsYEDINAK JOSEPH A·Filed 2009·Granted Oct 22, 2013·8 cites·23 claims
- 2784US9748329B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsFAIRCHILD SEMICONDUCTOR·Filed 2015·Granted Aug 29, 2017·3 cites·22 claims
- 2884US7767524B2Method and structure for forming a shielded gate field effect transistorFAIRCHILD SEMICONDUCTOR CORPOR·Filed 2009·Granted Aug 3, 2010·7 cites·8 claims
- 2982US8193570B2Synchronous buck converter using shielded gate field effect transistorsSAPP STEVEN·Filed 2010·Granted Jun 5, 2012·6 cites·20 claims
- 3081US10868113B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsFAIRCHILD SEMICONDUCTOR·Filed 2017·Granted Dec 15, 2020·2 cites·18 claims
- 3179US9293526B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsFAIRCHILD SEMICONDUCTOR·Filed 2012·Granted Mar 22, 2016·3 cites·27 claims
- 3279US8101484B2Method of forming a FET having ultra-low on-resistance and low gate chargeBENCUYA IZAK·Filed 2010·Granted Jan 24, 2012·4 cites·30 claims
- 3378US7745289B2Method of forming a FET having ultra-low on-resistance and low gate chargeFAIRCHILD SEMICONDUCTOR·Filed 2004·Granted Jun 29, 2010·18 cites·13 claims
- 3472US9391193B2Trench-based power semiconductor devices with increased breakdown voltage characteristicsFAIRCHILD SEMICONDUCTOR·Filed 2015·Granted Jul 12, 2016·1 cites·18 claims
- 3571US8710584B2FET device having ultra-low on-resistance and low gate chargeBENCUYA IZAK·Filed 2012·Granted Apr 29, 2014·2 cites·20 claims
- 3665US9679890B2Junction-less insulated gate current limiter deviceFAIRCHILD SEMICONDUCTOR·Filed 2014·Granted Jun 13, 2017·1 cites·20 claims
- 3761US8072027B23D channel architecture for semiconductor devicesKIM SUKU·Filed 2009·Granted Dec 6, 2011·3 cites·24 claims
- 3859US2008197407A1Power Semiconductor Devices with Barrier Layer to Reduce Substrate Up-Diffusion and Methods of ManufactureCHALLA ASHOK·Filed 2008·Application pending·0 cites
- 3955US8598654B2MOSFET device with thick trench bottom oxidePARK CHANHO·Filed 2011·Granted Dec 3, 2013·1 cites·21 claims
- 4055US2023403003A1Integrated resistor-transistor-capacitor snubberSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Application pending·0 cites
- 4146US9018700B2Direct-drain trench FET with source and drain isolationFAIRCHILD SEMICONDUCTOR·Filed 2014·Granted Apr 28, 2015·0 cites·21 claims
- 4242US10396216B2Device including a sidewall Schottky interfaceSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Aug 27, 2019·0 cites·17 claims
- 4339US2004142523A1Method of forming vertical mosfet with ultra-low on-resistance and low gate chargeFiled 2004·Application pending·0 cites
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