Inventor · disambiguated record
Nobuhiro Tsuji
Also filed as: TSUJI NOBUHIRO
24 granted patents·12 pending applications·89 citations·filing 2001–2025
94Inventor score
Top patents by PatentIndex Score
36 records- 0196US11244711B2Semiconductor apparatus and method for controlling semiconductor apparatusKIOXIA CORP·Filed 2020·Granted Feb 8, 2022·6 cites·15 claims
- 0284US6836001B2Semiconductor device having epitaxially-filled trench and method for manufacturing semiconductor device having epitaxially-filled trenchDENSO CORP·Filed 2003·Granted Dec 28, 2004·30 cites·1 claims
- 0384US6406982B2Method of improving epitaxially-filled trench by smoothing trench prior to fillingDENSO CORP·Filed 2001·Granted Jun 18, 2002·27 cites·22 claims
- 0477US10621034B2Memory device that changes a writable region of a data buffer based on an operational state of an ECC circuitTOSHIBA MEMORY CORP·Filed 2017·Granted Apr 14, 2020·2 cites·16 claims
- 0577US9891987B2Memory device that communicates error correction results to a hostTOSHIBA MEMORY CORP·Filed 2016·Granted Feb 13, 2018·2 cites·20 claims
- 0676US10769011B2Memory device that changes a writable region of a data buffer based on an operational state of an ECC circuitTOSHIBA MEMORY CORP·Filed 2016·Granted Sep 8, 2020·2 cites·20 claims
- 0774US2025279436A1Electrode and batteryPANASONIC HOLDINGS CORP·Filed 2025·Application pending·0 cites
- 0874US2025273686A1Electrode and batteryPANASONIC HOLDINGS CORP·Filed 2025·Application pending·0 cites
- 0972US2025273692A1Current collector, electrode, and batteryPANASONIC HOLDINGS CORP·Filed 2025·Application pending·0 cites
- 1070US9959937B2Memory system including test circuitTOSHIBA MEMORY CORP·Filed 2016·Granted May 1, 2018·3 cites·20 claims
- 1170US9728275B2Memory system that handles access to bad blocksTOSHIBA KK·Filed 2016·Granted Aug 8, 2017·3 cites·20 claims
- 1269US10289482B2Memory device that updates parameters transmitted to a host based on operational settingsTOSHIBA MEMORY CORP·Filed 2016·Granted May 14, 2019·3 cites·14 claims
- 1364US9492856B2Element wire, electric wire and process for producing element wireHANAZAKI KENICHI·Filed 2008·Granted Nov 15, 2016·2 cites·4 claims
- 1464US2023142712A1Electrode and method for producing all-solid-state batteryTOYOTA MOTOR CO LTD·Filed 2022·Application pending·0 cites
- 1562US9747994B2Memory systemTOSHIBA KK·Filed 2016·Granted Aug 29, 2017·1 cites·18 claims
- 1659US9034721B2Method for manufacturing semiconductor substrateSUMCO CORP·Filed 2014·Granted May 19, 2015·0 cites·2 claims
- 1759US8956947B2Method for manufacturing semiconductor substrateSUMCO CORP·Filed 2014·Granted Feb 17, 2015·0 cites·9 claims
- 1858US7063751B2Semiconductor substrate formed by epitaxially filling a trench in a semiconductor substrate with a semiconductor material after smoothing the surface and rounding the cornersDENSO CORP·Filed 2002·Granted Jun 20, 2006·5 cites·5 claims
- 1956US12197774B2Semiconductor device and control methodKIOXIA CORP·Filed 2022·Granted Jan 14, 2025·0 cites·18 claims
- 2056US2025291517A1Semiconductor memory device, memory system, and methodKIOXIA CORP·Filed 2024·Application pending·0 cites
- 2154US10445174B2Memory device that communicates error correction results to a hostTOSHIBA MEMORY CORP·Filed 2017·Granted Oct 15, 2019·0 cites·17 claims
- 2253US10235070B2Memory system having a semiconductor memory device with protected blocksTOSHIBA MEMORY CORP·Filed 2017·Granted Mar 19, 2019·0 cites·18 claims
- 2351US7026248B2Method for manufacturing semiconductor device with semiconductor region inserted into trenchDENSO CORP·Filed 2003·Granted Apr 11, 2006·3 cites·24 claims
- 2451US2010178526A1Process for working metal members and structuresUNIV OSAKA·Filed 2007·Application pending·0 cites
- 2550US7656215B2Clock generator circuit, clock selector circuit, and semiconductor integrated circuitNEC ELECTRONICS CORP·Filed 2008·Granted Feb 2, 2010·0 cites·14 claims
- 2649US2009273102A1Semiconductor Substrate and Method for Manufacturing the SameNOGAMI SYOUJI·Filed 2006·Application pending·0 cites
- 2748US8835276B2Method for manufacturing semiconductor substrateNOGAMI SYOUJI·Filed 2010·Granted Sep 16, 2014·0 cites·2 claims
- 2846US2007084529A1High strength and high ductility steel sheet having ultrafine crystalline grain structure obtained by low strain processing and annealing of ordinary low carbon steel, and a method for producing thereofSAITO YOSHIHIRO·Filed 2006·Application pending·0 cites
- 2945US10535385B2Semiconductor integrated circuit and semiconductor deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Jan 14, 2020·0 cites·12 claims
- 3045US2008211063A1Semiconductor wafer and manufacturing method of semiconductor deviceDENSO CORP·Filed 2008·Application pending·0 cites
- 3144US10403341B2Semiconductor integrated circuit and semiconductor deviceTOSHIBA MEMORY CORP·Filed 2018·Granted Sep 3, 2019·0 cites·20 claims
- 3242US2024087777A1Thermistor layer, electrode for battery, battery, and thermistorELIIY POWER CO LTD·Filed 2021·Application pending·0 cites
- 3341US10310755B2Memory system having a semiconductor memory device with protected blocksTOSHIBA MEMORY CORP·Filed 2016·Granted Jun 4, 2019·0 cites·16 claims
- 3439US2005045996A1Semiconductor device having epitaxially-filled trench and method for manufacturing semiconductor device having epitaxially-filled trenchFiled 2004·Application pending·0 cites
- 3538US9620230B2Memory device that performs an advance reading operationTOSHIBA KK·Filed 2016·Granted Apr 11, 2017·0 cites·17 claims
- 3636US2006046146A1Method for producing non-expanded graphite powderNIPPON GRAPHITE IND CO LTD·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →