Inventor · disambiguated record
Eiichi Nishimura
Also filed as: NISHIMURA EIICHI
93 granted patents·37 pending applications·1,299 citations·filing 1981–2019
99Inventor score
Files withTOKYO ELECTRON LTD73NISHIMURA EIICHI14KUSHIBIKI MASATO8OKI ELECTRIC IND CO LTD7HITACHI LTD5
Top patents by PatentIndex Score
130 records- 0198US8491805B2Semiconductor device manufacturing method and plasma etching apparatusKUSHIBIKI MASATO·Filed 2011·Granted Jul 23, 2013·211 cites·8 claims
- 0297US10217933B2Method for etching multilayer filmTOKYO ELECTRON LTD·Filed 2015·Granted Feb 26, 2019·40 cites·16 claims
- 0397US7402523B2Etching methodTOKYO ELECTRON LTD·Filed 2006·Granted Jul 22, 2008·59 cites·18 claims
- 0496US8993352B2Plasma processing method and plasma processing apparatusTOKYO ELECTRON LTD·Filed 2013·Granted Mar 31, 2015·43 cites·17 claims
- 0595US8551289B2Plasma processing apparatusNISHIMURA EIICHI·Filed 2010·Granted Oct 8, 2013·46 cites·19 claims
- 0694US9647206B2Method for etching layer to be etchedTOKYO ELECTRON LTD·Filed 2014·Granted May 9, 2017·14 cites·4 claims
- 0793US7344993B2Low-pressure removal of photoresist and etch residueTOKYO ELECTRON LTD INC·Filed 2005·Granted Mar 18, 2008·39 cites·43 claims
- 0891US5741552ACoating composition and method for forming multi-layer coatingNIPPON PAINT CO LTD·Filed 1996·Granted Apr 21, 1998·73 cites·20 claims
- 0991US5147493APlasma generating apparatusTOKYO ELECTRON LTD·Filed 1991·Granted Sep 15, 1992·95 cites·9 claims
- 1090US5314603APlasma processing apparatus capable of detecting and regulating actual RF power at electrode within chamberTEL YAMANISHI KK·Filed 1992·Granted May 24, 1994·162 cites·21 claims
- 1189US9859102B2Method of etching porous filmTOKYO ELECTRON LTD·Filed 2016·Granted Jan 2, 2018·5 cites·11 claims
- 1286US9340158B2Outer mirrorMURAKAMI CORP·Filed 2013·Granted May 17, 2016·11 cites·4 claims
- 1386US8383521B2Substrate processing methodTOKYO ELECTRON LTD·Filed 2010·Granted Feb 26, 2013·8 cites·8 claims
- 1486US7871908B2Method of manufacturing semiconductor deviceTOKYO ELECTRON LTD·Filed 2009·Granted Jan 18, 2011·11 cites·11 claims
- 1586US7169440B2Method for removing photoresist and etch residuesTOKYO ELECTRON LTD·Filed 2002·Granted Jan 30, 2007·38 cites·38 claims
- 1686US4740694AMethod and apparatus for analyzing positron extinction and electron microscope having said apparatusHITACHI LTD·Filed 1986·Granted Apr 26, 1988·34 cites·33 claims
- 1785US7622392B2Method of processing substrate, method of manufacturing solid-state imaging device, method of manufacturing thin film device, and programs for implementing the methodsTOKYO ELECTRON LTD·Filed 2006·Granted Nov 24, 2009·11 cites·12 claims
- 1885US7510972B2Method of processing substrate, post-chemical mechanical polishing cleaning method, and method of and program for manufacturing electronic deviceTOKYO ELECTRON LTD·Filed 2006·Granted Mar 31, 2009·11 cites·18 claims
- 1984US8353986B2Substrate processing apparatusTOKYO ELECTRON LTD·Filed 2006·Granted Jan 15, 2013·15 cites·22 claims
- 2084US5445709AAnisotropic etching method and apparatusHITACHI LTD·Filed 1993·Granted Aug 29, 1995·84 cites·15 claims
- 2183US10053773B2Method of cleaning plasma processing apparatusTOKYO ELECTRON LTD·Filed 2015·Granted Aug 21, 2018·3 cites·13 claims
- 2280US7993540B2Substrate processing method and substrate processing apparatusTOKYO ELECTRON LTD·Filed 2007·Granted Aug 9, 2011·6 cites·12 claims
- 2379US9412618B2Pattern forming methodTOKYO ELECTRON LTD·Filed 2014·Granted Aug 9, 2016·4 cites·2 claims
- 2478US10074800B2Method for etching magnetic layer including isopropyl alcohol and carbon dioxideTOKYO ELECTRON LTD·Filed 2016·Granted Sep 11, 2018·2 cites·6 claims
- 2577US9660182B2Plasma processing method and plasma processing apparatusTOKYO ELECTRON LTD·Filed 2013·Granted May 23, 2017·5 cites·8 claims
- 2677US8741396B2Method for forming amorphous carbon nitride film, amorphous carbon nitride film, multilayer resist film, method for manufacturing semiconductor device, and storage medium in which control program is storedISHIKAWA HIRAKU·Filed 2009·Granted Jun 3, 2014·5 cites·10 claims
- 2777US7985699B2Substrate processing method and storage mediumTOKYO ELECTRON LTD·Filed 2007·Granted Jul 26, 2011·5 cites·12 claims
- 2876US8043472B2Substrate processing apparatus and focus ringTOKYO ELECTRON LTD·Filed 2008·Granted Oct 25, 2011·5 cites·3 claims
- 2976US7682517B2Method of processing substrate, and method of and program for manufacturing electronic deviceTOKYO ELECTRON LTD·Filed 2006·Granted Mar 23, 2010·9 cites·12 claims
- 3074US8778206B2Substrate processing method and storage mediumNISHIMURA EIICHI·Filed 2012·Granted Jul 15, 2014·3 cites·10 claims
- 3174US4451428AControl rods and method of producing sameHITACHI LTD·Filed 1981·Granted May 29, 1984·29 cites·16 claims
- 3273US9126229B2Deposit removal methodTAHARA SHIGERU·Filed 2012·Granted Sep 8, 2015·3 cites·8 claims
- 3373US7736942B2Substrate processing apparatus, substrate processing method and storage mediumTOKYO ELECTRON LTD·Filed 2008·Granted Jun 15, 2010·4 cites·20 claims
- 3472US8585831B2Substrate cleaning methodMATSUI HIDEFUMI·Filed 2010·Granted Nov 19, 2013·3 cites·6 claims
- 3572US8273258B2Fine pattern forming methodSONE TAKASHI·Filed 2010·Granted Sep 25, 2012·3 cites·14 claims
- 3671US9208997B2Method of etching copper layer and maskTOKYO ELECTRON LTD·Filed 2013·Granted Dec 8, 2015·2 cites·3 claims
- 3771US8877081B2Etching method and etching apparatusTOKYO ELECTRON LTD·Filed 2013·Granted Nov 4, 2014·2 cites·9 claims
- 3871US8241511B2Substrate processing methodKUSHIBIKI MASATO·Filed 2008·Granted Aug 14, 2012·3 cites·7 claims
- 3971US8173357B2Method of forming etching mask, etching method using the etching mask, and method of fabricating semiconductor device including the etching methodNISHIMURA EIICHI·Filed 2009·Granted May 8, 2012·3 cites·9 claims
- 4070US8715520B2Substrate processing method and storage mediumSONE TAKASHI·Filed 2012·Granted May 6, 2014·2 cites·6 claims
- 4170US8642136B2Substrate processing method and substrate processing apparatus for performing a deposition process and calculating a termination time of the deposition processKUSHIBIKI MASATO·Filed 2009·Granted Feb 4, 2014·3 cites·5 claims
- 4270US7700494B2Low-pressure removal of photoresist and etch residueTOKYO ELECTRON LTD INC·Filed 2004·Granted Apr 20, 2010·14 cites·45 claims
- 4369US8679985B2Dry etching method for silicon nitride filmNISHIMURA EIICHI·Filed 2010·Granted Mar 25, 2014·2 cites·8 claims
- 4469US8210742B2Method and apparatus for detecting foreign matter attached to peripheral edge of substrate, and storage mediumMORIYA TSUYOSHI·Filed 2009·Granted Jul 3, 2012·2 cites·5 claims
- 4569US7532717B2Echo canceler with automatic gain control of echo cancellation signalOKI ELECTRIC IND CO LTD·Filed 2001·Granted May 12, 2009·10 cites·7 claims
- 4669US4995696AOptical amplifier moduleOKI ELECTRIC IND CO LTD·Filed 1990·Granted Feb 26, 1991·27 cites·24 claims
- 4768US9165784B2Substrate processing method and storage mediumNISHIMURA EIICHI·Filed 2012·Granted Oct 20, 2015·2 cites·4 claims
- 4867US6925177B2Echo canceler compensating for amplifier saturation and echo amplificationOKI ELECTRIC IND CO LTD·Filed 2002·Granted Aug 2, 2005·8 cites·17 claims
- 4967US5766498AAnisotropic etching method and apparatusHITACHI LTD·Filed 1996·Granted Jun 16, 1998·31 cites·23 claims
- 5066US8961737B2Plasma processing apparatusNISHIMURA EIICHI·Filed 2009·Granted Feb 24, 2015·1 cites·6 claims
Showing the top 50 of 130 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →