Inventor · disambiguated record
Shom Ponoth
Also filed as: PONOTH SHOM · PONOTH SHOM S · PONOTH SHOM SURENDRAN
223 granted patents·41 pending applications·1,830 citations·filing 2002–2018
99Inventor score
Top patents by PatentIndex Score
264 records- 0199US8482132B2Pad bonding employing a self-aligned plated liner for adhesion enhancementYANG CHIH-CHAO·Filed 2009·Granted Jul 9, 2013·237 cites·6 claims
- 0298US9257348B2Methods of forming replacement gate structures for transistors and the resulting devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 9, 2016·43 cites·27 claims
- 0398US9064801B1Bi-layer gate cap for self-aligned contact formationIBM·Filed 2014·Granted Jun 23, 2015·49 cites·17 claims
- 0498US8785284B1FinFETs and fin isolation structuresIBM·Filed 2013·Granted Jul 22, 2014·34 cites·18 claims
- 0598US8569152B1Cut-very-last dual-epi flowBASKER VEERARAGHAVAN S·Filed 2012·Granted Oct 29, 2013·65 cites·20 claims
- 0698US8420459B1Bulk fin-field effect transistors with well defined isolationCHENG KANGGUO·Filed 2011·Granted Apr 16, 2013·67 cites·20 claims
- 0797US9219153B2Methods of forming gate structures for FinFET devices and the resulting semiconductor productsGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 22, 2015·32 cites·20 claims
- 0897US8999774B2Bulk fin-field effect transistors with well defined isolationIBM·Filed 2013·Granted Apr 7, 2015·18 cites·15 claims
- 0997US8604539B2Bulk fin-field effect transistors with well defined isolationCHENG KANGGUO·Filed 2012·Granted Dec 10, 2013·18 cites·20 claims
- 1097US8581320B1MOS capacitors with a finfet processCHENG KANGGUO·Filed 2012·Granted Nov 12, 2013·28 cites·20 claims
- 1197US8299625B2Borderless interconnect line structure self-aligned to upper and lower level contact viasPONOTH SHOM·Filed 2010·Granted Oct 30, 2012·45 cites·11 claims
- 1296US9177820B2Sub-lithographic semiconductor structures with non-constant pitchIBM·Filed 2012·Granted Nov 3, 2015·20 cites·12 claims
- 1396US8987790B2Fin isolation in multi-gate field effect transistorsIBM·Filed 2012·Granted Mar 24, 2015·22 cites·15 claims
- 1496US8906807B2Single fin cut employing angled processing methodsIBM·Filed 2012·Granted Dec 9, 2014·23 cites·20 claims
- 1596US8623712B2Bulk fin-field effect transistors with well defined isolationIBM·Filed 2013·Granted Jan 7, 2014·15 cites·20 claims
- 1696US8492274B2Metal alloy cap integrationIBM·Filed 2012·Granted Jul 23, 2013·19 cites·9 claims
- 1796US8390079B2Sealed air gap for semiconductor chipHORAK DAVID V·Filed 2010·Granted Mar 5, 2013·26 cites·4 claims
- 1896US8288268B2Microelectronic structure including air gapEDELSTEIN DANIEL C·Filed 2010·Granted Oct 16, 2012·24 cites·20 claims
- 1996US8232618B2Semiconductor structure having a contact-level air gap within the interlayer dielectrics above a semiconductor device and a method of forming the semiconductor structure using a self-assembly approachBREYTA GREGORY·Filed 2010·Granted Jul 31, 2012·33 cites·12 claims
- 2095US9935168B2Gate contact with vertical isolation from source-drainIBM·Filed 2017·Granted Apr 3, 2018·8 cites·20 claims
- 2195US8932918B2FinFET with self-aligned punchthrough stopperCHENG KANGGUO·Filed 2012·Granted Jan 13, 2015·17 cites·20 claims
- 2295US8896067B2Method of forming finFET of variable channel widthIBM·Filed 2013·Granted Nov 25, 2014·20 cites·13 claims
- 2394US9711503B2Gate structures with protected end surfaces to eliminate or reduce unwanted EPI material growthGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 18, 2017·9 cites·15 claims
- 2494US9269792B2Method and structure for robust finFET replacement metal gate integrationIBM·Filed 2014·Granted Feb 23, 2016·17 cites·20 claims
- 2594US9263290B2Sub-lithographic semiconductor structures with non-constant pitchGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 16, 2016·8 cites·7 claims
- 2694US9147576B2Gate contact with vertical isolation from source-drainIBM·Filed 2014·Granted Sep 29, 2015·12 cites·17 claims
- 2794US9000522B2FinFET with dielectric isolation by silicon-on-nothing and method of fabricationIBM·Filed 2013·Granted Apr 7, 2015·13 cites·9 claims
- 2894US8928067B2Bulk fin-field effect transistors with well defined isolationIBM·Filed 2013·Granted Jan 6, 2015·10 cites·20 claims
- 2994US8592290B1Cut-very-last dual-EPI flowBASKER VEERARAGHAVAN S·Filed 2012·Granted Nov 26, 2013·16 cites·20 claims
- 3094US8525339B2Hybrid copper interconnect structure and method of fabricating sameYANG CHIH-CHAO·Filed 2011·Granted Sep 3, 2013·16 cites·16 claims
- 3194US7790601B1Forming interconnects with air gapsIBM·Filed 2009·Granted Sep 7, 2010·26 cites·18 claims
- 3293US9269629B2Dummy fin formation by gas cluster ion beamGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 23, 2016·11 cites·8 claims
- 3393US9105693B2Microelectronic structure including air gapEDELSTEIN DANIEL C·Filed 2012·Granted Aug 11, 2015·11 cites·8 claims
- 3493US8946792B2Dummy fin formation by gas cluster ion beamIBM·Filed 2012·Granted Feb 3, 2015·12 cites·2 claims
- 3593US8941156B2Self-aligned dielectric isolation for FinFET devicesIBM·Filed 2013·Granted Jan 27, 2015·13 cites·16 claims
- 3693US8227339B2Creation of vias and trenches with different depthsPONOTH SHOM·Filed 2009·Granted Jul 24, 2012·17 cites·15 claims
- 3792US9171757B2Dual shallow trench isolation liner for preventing electrical shortsIBM·Filed 2013·Granted Oct 27, 2015·8 cites·9 claims
- 3892US9034703B2Self aligned contact with improved robustnessCHENG KANGGUO·Filed 2012·Granted May 19, 2015·13 cites·20 claims
- 3992US8835305B2Method of fabricating a profile control in interconnect structuresYANG CHIH-CHAO·Filed 2012·Granted Sep 16, 2014·12 cites·13 claims
- 4092US8703604B2Creation of vias and trenches with different depthsPONOTH SHOM·Filed 2012·Granted Apr 22, 2014·10 cites·13 claims
- 4192US7943480B2Sub-lithographic dimensioned air gap formation and related structureIBM·Filed 2008·Granted May 17, 2011·18 cites·13 claims
- 4291US9406570B2FinFET deviceGlobalfoundries·Filed 2015·Granted Aug 2, 2016·6 cites·6 claims
- 4391US9349838B2Semiconductor structure with deep trench thermal conductionIBM·Filed 2014·Granted May 24, 2016·9 cites·4 claims
- 4491US9209202B2Enabling bulk FINFET-based devices for FINFET technology with dielectric isolationBROADCOM CORP·Filed 2014·Granted Dec 8, 2015·14 cites·12 claims
- 4591US9082853B2Bulk finFET with punchthrough stopper region and method of fabricationIBM·Filed 2012·Granted Jul 14, 2015·18 cites·12 claims
- 4691US8937359B2Contact formation for ultra-scaled devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 20, 2015·12 cites·20 claims
- 4791US8828876B2Dual mandrel sidewall image transfer processesIBM·Filed 2013·Granted Sep 9, 2014·10 cites·19 claims
- 4891US8703550B2Dual shallow trench isolation liner for preventing electrical shortsDORIS BRUCE B·Filed 2012·Granted Apr 22, 2014·8 cites·11 claims
- 4991US8492265B2Pad bonding employing a self-aligned plated liner for adhesion enhancementYANG CHIH-CHAO·Filed 2012·Granted Jul 23, 2013·11 cites·20 claims
- 5091US8211776B2Integrated circuit line with electromigration barriersHORAK DAVID V·Filed 2010·Granted Jul 3, 2012·11 cites·12 claims
Showing the top 50 of 264 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →