Inventor · disambiguated record
Hidenori Miyoshi
Also filed as: MIYOSHI HIDENORI
25 granted patents·19 pending applications·985 citations·filing 2002–2023
95Inventor score
Files withTOKYO ELECTRON LTD22MIYOSHI HIDENORI8UBE EXSYMO CO LTD3MATSUMOTO KENJI2UNIV NAGOYA NAT UNIV CORP2
Top patents by PatentIndex Score
44 records- 0198US8999102B2Substrate processing apparatusTOKYO ELECTRON LTD·Filed 2014·Granted Apr 7, 2015·463 cites·6 claims
- 0297US8785311B2Film forming method, semiconductor device, manufacturing method thereof and substrate processing apparatus thereforMIYOSHI HIDENORI·Filed 2011·Granted Jul 22, 2014·464 cites·13 claims
- 0390US8610353B2Plasma generating apparatus, plasma processing apparatus and plasma processing methodITOH HITOSHI·Filed 2011·Granted Dec 17, 2013·7 cites·18 claims
- 0487US8354337B2Metal oxide film formation method and apparatusTOKYO ELECTRON LTD·Filed 2010·Granted Jan 15, 2013·8 cites·23 claims
- 0585US8709541B2Method for forming a filmMATSUMOTO KENJI·Filed 2010·Granted Apr 29, 2014·6 cites·3 claims
- 0685US8653665B2Barrier layer, film forming method, and processing systemMIYOSHI HIDENORI·Filed 2010·Granted Feb 18, 2014·6 cites·12 claims
- 0782US8765221B2Film forming method and film forming apparatusMIYOSHI HIDENORI·Filed 2012·Granted Jul 1, 2014·5 cites·20 claims
- 0880US8029856B2Film formation method and apparatusTOKYO ELECTRON LTD·Filed 2007·Granted Oct 4, 2011·4 cites·10 claims
- 0978US12162770B2Black powder, and method for producing sameUBE EXSYMO CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·3 claims
- 1074US8865590B2Film forming method, pretreatment device, and processing systemMATSUMOTO KENJI·Filed 2010·Granted Oct 21, 2014·3 cites·14 claims
- 1172US7279434B2Material and method for forming low-dielectric-constant filmTOKYO ELECTRON LTD·Filed 2005·Granted Oct 9, 2007·4 cites·3 claims
- 1268US8003535B2Semiconductor device manufacturing method and target substrate processing systemTOKYO ELECTRON LTD·Filed 2008·Granted Aug 23, 2011·2 cites·5 claims
- 1367US11679985B2Black powder, and method for producing sameUBE EXSYMO CO LTD·Filed 2018·Granted Jun 20, 2023·0 cites·4 claims
- 1467US8394231B2Plasma process device and plasma process methodTAKATSUKI KOICHI·Filed 2007·Granted Mar 12, 2013·3 cites·18 claims
- 1567US8114786B2Heat treatment method, heat treatment apparatus and substrate processing apparatusMIYOSHI HIDENORI·Filed 2007·Granted Feb 14, 2012·2 cites·11 claims
- 1667US7709394B2Substrate processing method and apparatus fabrication process of a semiconductor deviceTOKYO ELECTRON LTD·Filed 2007·Granted May 4, 2010·2 cites·8 claims
- 1762US7556711B2Semiconductor device manufacturing apparatus and operating method thereofTOKYO ELECTRON LTD·Filed 2006·Granted Jul 7, 2009·2 cites·10 claims
- 1859US2023312355A1Hollow inorganic particle and method for producing said hollow inorganic particleUBE EXSYMO CO LTD·Filed 2021·Application pending·0 cites
- 1953US2014190409A1Device and method for forming filmTOKYO ELECTRON LTD·Filed 2014·Application pending·0 cites
- 2053US2014117551A1Processing system for forming film on target objectTOKYO ELECTRON LTD·Filed 2014·Application pending·0 cites
- 2152US12266562B2Substrate processing method and substrate processing apparatusTOKYO ELECTRON LTD·Filed 2021·Granted Apr 1, 2025·0 cites·17 claims
- 2252US11024514B2Etching method and etching apparatusTOKYO ELECTRON LTD·Filed 2019·Granted Jun 1, 2021·0 cites·16 claims
- 2350US8310054B2Semiconductor device manufacturing method and target substrate processing systemMIYOSHI HIDENORI·Filed 2011·Granted Nov 13, 2012·0 cites·10 claims
- 2448US2009204252A1Substrate processing method and apparatus, method for manufacturing semiconductor device and storage mediumTOKYO ELECTRON LTD·Filed 2009·Application pending·0 cites
- 2547US8138095B2Method of substrate treatment, process for producing semiconductor device, substrate treating apparatus, and recording mediumMIYOSHI HIDENORI·Filed 2007·Granted Mar 20, 2012·0 cites·17 claims
- 2647US7772130B2Insulation film forming method, insulation film forming system, and semiconductor device manufacturing methodTOKYO ELECTRON LTD·Filed 2004·Granted Aug 10, 2010·4 cites·24 claims
- 2747US2008213998A1Method for manufacturing semiconductor device, semiconductor manufacturing apparatus and storage medium for executing the methodTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 2847US2010029086A1Method for manufacturing semiconductor device and storage mediumTOKYO ELECTON LTD·Filed 2009·Application pending·0 cites
- 2947US2009042397A1Copper re-deposition preventing method, semiconductor device manufacturing method, and substrate processing apparatusTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 3046US8551565B2Film forming method and film forming apparatusGUNJI ISAO·Filed 2008·Granted Oct 8, 2013·0 cites·6 claims
- 3146US2010108108A1Substrate mounting table, substrate processing apparatus and method for treating surface of substrate mounting tableTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 3245US2009324827A1Cvd film forming method and cvd film forming apparatusTOKYO ELECTRON LTD·Filed 2007·Application pending·0 cites
- 3345US2009325393A1Heat treatment method and heat treatment apparatusTOKYO ELECTRON LTD·Filed 2007·Application pending·0 cites
- 3444US2015056381A1Method for forming conductive filmUNIV NAGOYA NAT UNIV CORP·Filed 2013·Application pending·0 cites
- 3544US2009087995A1Method of substrate treatment, process for producing semiconductor device, substrate treating apparatus, and recording mediumTOKYO ELECTRON LTD·Filed 2007·Application pending·0 cites
- 3642US2014008326A1Plasma generation device, plasma processing apparatus and plasma processing methodUNIV NAGOYA NAT UNIV CORP·Filed 2013·Application pending·0 cites
- 3741US10825688B2Method for etching copper layerTOKYO ELECTRON LTD·Filed 2017·Granted Nov 3, 2020·0 cites·16 claims
- 3841US9293417B2Method for forming barrier film on wiring lineMIYOSHI HIDENORI·Filed 2012·Granted Mar 22, 2016·0 cites·17 claims
- 3941US2009206453A1Method for Preparing Modified Porous Silica Films, Modified Porous Silica Films Prepared According to This Method and Semiconductor Devices Fabricated Using the Modified Porous Silica FilmsULVAC INC·Filed 2006·Application pending·0 cites
- 4041US2013306597A1Processing apparatus and method for processing metal filmTOKYO ELECTRON LTD·Filed 2013·Application pending·0 cites
- 4139US2012006782A1Substrate processing method and substrate processing apparatusMIYOSHI HIDENORI·Filed 2011·Application pending·0 cites
- 4237US2004127033A1Plasma processing device and plasma processing methodFiled 2002·Application pending·0 cites
- 4336US2016351398A1Semiconductor element manufacturing methodTOKYO ELECTRON LTD·Filed 2016·Application pending·0 cites
- 4436US2004253777A1Method and apparatus for forming filmFiled 2002·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →