Processing system for forming film on target object

Abstract

A processing system for forming a film on a target object having thereon an insulating layer that is made of a low-k film and having a recess is provided. The processing system comprises: a processing apparatus configured to form a first-metal-containing film containing a first metal on a surface of the target object; a processing apparatus configured to form a second-metal-containing film containing Mn as a second metal having a barrier property against a filling metal to be filled in the recess; a processing apparatus configured to form a thin film made of a third metal as the filling metal to be filled; a common transfer chamber connected with each of the processing apparatuses; a transfer unit for transferring the target object into each of the processing apparatuses; and a system controller that controls the whole processing system so as to perform a film forming method.

What is claimed is: 
     
         1 . A processing system for forming a film on a target object having thereon an insulating layer that is made of a low-k film and having a recess whose bottom is exposed to a metallic layer, the processing system comprising:
 a processing apparatus configured to form a first-metal-containing film containing a first metal on the surface of the target object;   a processing apparatus configured to form, on the surface of the target object, a second-metal-containing film containing Mn as a second metal having a barrier property against a filling metal to be filled in the recess;   a processing apparatus configured to form a thin film made of a third metal as the filling metal on the surface of the target object;   a common transfer chamber connected with each of the processing apparatuses;   a transfer unit, provided within the common transfer chamber, for transferring the target object into each of the processing apparatuses; and   a system controller that controls the whole processing system so as to perform a film forming method for forming the film on the target object,   wherein the film forming method comprises:   forming the first-metal-containing film containing the first metal; and   after forming the first-metal-containing film, forming the second-metal-containing film containing the second metal having the barrier property against the filling metal to be filled in the recess.   
     
     
         2 . A processing system for forming a film on a target object having thereon an insulating layer that is made of a low-k film and having a recess whose bottom is exposed to a metallic layer, the processing system comprising:
 a processing apparatus configured to form, on the surface of the target object, a first-metal-containing film containing a first metal and form a second-metal-containing film containing Mn as a second metal having a barrier property against a filling metal to be filled in the recess;   a processing apparatus configured to form, on the surface of the target object, a thin film made of a third metal as the filling metal to be filled;   a common transfer chamber connected with each of the processing apparatuses;   a transfer unit, provided within the common transfer chamber, for transferring the target object into each of the processing apparatuses; and   a system controller that controls the whole processing system so as to perform a film forming method for forming the film on the target object,   wherein the film forming method comprises:   forming the first-metal-containing film containing the first metal; and   after forming the first-metal-containing film, forming the second-metal-containing film containing the second metal having the barrier property against the filling metal to be filled in the recess.   
     
     
         3 . A processing system for forming a film on a target object having thereon an insulating layer that is made of a low-k film and having a recess whose bottom is exposed to a metallic layer, the processing system comprising:
 a processing apparatus configured to form an alloy film containing a first metal, Mn as a second metal having a barrier property against a filling metal to be filled in the recess, and a third metal as a material of the filling metal to be filled;   a common transfer chamber connected with the processing apparatus;   a transfer unit, provided within the common transfer chamber, for transferring the target object into the processing apparatus; and   a system controller that controls the whole processing system so as to perform a film forming method for forming the film on the target object,   wherein the film forming method comprises:   forming the alloy film containing the first metal, the second metal having the barrier property against the filling metal to be filled in the recess, and the third metal as the material of the filling metal.   
     
     
         4 . A non-transitory computer readable storage medium having stored thereon computer-executable instructions that, in response to execution, cause the processing system as claimed in  claim 1  to perform the film forming method. 
     
     
         5 . A non-transitory computer readable storage medium having stored thereon computer-executable instructions that, in response to execution, cause the processing system as claimed in  claim 2  to perform the film forming method. 
     
     
         6 . A non-transitory computer readable storage medium having stored thereon computer-executable instructions that, in response to execution, cause the processing system as claimed in  claim 3  to perform the film forming method. 
     
     
         7 . A semiconductor device having a film structure formed by a film forming method for forming a film on a target object having thereon an insulating layer that is made of a low-k film and having a recess whose bottom surface is exposed to a metallic layer, the film forming method comprising:
 forming a first-metal-containing film containing a first metal; and   after forming the first-metal-containing film, forming a second-metal-containing film containing a second metal having a barrier property against a filling metal to be filled in the recess,   wherein the second metal is Mn.   
     
     
         8 . An electronic apparatus having a film structure formed by a film forming method for forming a film on a target object having thereon an insulating layer that is made of a low-k film and having a recess whose bottom surface is exposed to a metallic layer, the film forming method comprising:
 forming a first-metal-containing film containing a first metal; and   after forming the first-metal-containing film, forming a second-metal-containing film containing a second metal having a barrier property against a filling metal to be filled in the recess,   wherein the second metal is Mn.