Device and method for forming film

Abstract

The present disclosure relates to a film forming apparatus for forming a thin film on a surface of an object to be processed by using an organic metal raw material gas within a processing chamber configured to exhaust air, wherein a hydrophobic layer is installed on a surface of a member exposed to the atmosphere within the processing chamber.

1 - 12 . (canceled) 
     
     
         13 . A film forming apparatus for forming a thin film on a surface of an object to be processed by using an organic metal raw material gas within a processing chamber configured to exhaust air,
 wherein a hydrophobic layer is installed on a surface of a member exposed to the atmosphere within the processing chamber.   
     
     
         14 . A film forming apparatus for forming a thin film on a surface of an object to be processed by using an organic metal raw material gas and an oxygen-containing gas within a processing chamber configured to exhaust air,
 wherein a hydrophobic layer is installed on a surface of a member exposed to the atmosphere within the processing chamber.   
     
     
         15 . The apparatus of  claim 13 , wherein the member includes one or more selected from the group consisting of the processing chamber, a shower head unit configured to introduce a gas into the processing chamber, a mounting table structure configured to support the object to be processed, and a gate valve opened when the object to be processed is carried in or out of the processing chamber. 
     
     
         16 . The apparatus of  claim 13 , wherein the hydrophobic layer is also formed on the interior of an exhaust pipe connected to the processing chamber. 
     
     
         17 . The apparatus of  claim 13 , wherein the hydrophobic layer is configured as one layer selected from the group consisting of an SiOC layer, a fluorinated resin layer, and a hydrophobized silicon layer. 
     
     
         18 . The apparatus of  claim 13 , wherein a metal included in the organic metal raw material gas is one or more metals selected from the group consisting of Mn, Nb, Zr, Cr, V, Y, Pd, Ni, Pt, Rh, Tc, Al, Mg, Sn, Ge, Ti, and Re. 
     
     
         19 . The apparatus of  claim 18 , wherein the organic metal material including the Mn is one or more materials selected from the group consisting of (EtCp) 2 Mn[=Mn(C 2 H 5 C 5 H 4 ) 2 ], Cp 2 Mn[=Mn(C 5 H 5 ) 2 ], (MeCp) 2 Mn[=Mn(CH 3 C 5 H 4 ) 2 ], (i-PrCp) 2 Mn[=Mn(C 3 H 7 C 5 H 4 ) 2 ], MeCpMn(CO) 3 [=(CH 3 C 5 H 4 )Mn(CO) 3 ], (t-BuCp) 2 Mn[=Mn(C 4 H 9 C 5 H 4 ) 2 ], CH 3 Mn(CO) 5 , Mn(DPM) 3 [=Mn(C 11 H 19 O 2 ) 3 ], Mn(DMPD)(EtCp)[=Mn(C 7 H 11 C 2 H 5 C 5 H 4 )], Mn(acac) 2 [=Mn(C 5 H 7 O 2 ) 2 ], Mn(DPM) 2 [=Mn(C 11 H 19 O 2 ) 2 ], Mn(acac) 3 [=Mn(C 5 H 7 O 2 ) 3 ], Mn(hfac) 2 [=Mn(C 5 HF 6 O 2 ) 3 ], ((CH 3 ) 5 Cp) 2 Mn[=Mn((CH 3 ) 5 C 5 H 4 ) 2 ], [Mn(iPr-AMD) 2 ][=Mn(C 3 H 7 NC(CH 3 )NC 3 H 7 ) 2 ], and [Mn(tBu-AMD) 2 ][=Mn(C 4 H 9 NC(CH 3 )NC 4 H 9 ) 2 ]. 
     
     
         20 . The apparatus of  claim 14 , wherein the member includes one or more selected from the group consisting of the processing chamber, a shower head unit configured to introduce a gas into the processing chamber, a mounting table structure configured to support the object to be processed, and a gate valve opened when the object to be processed is carried in or out of the processing chamber. 
     
     
         21 . The apparatus of  claim 14 , wherein the hydrophobic layer is also formed on the interior of an exhaust pipe connected to the processing chamber.