Inventor · disambiguated record
Jiro Yugami
Also filed as: YUGAMI JIRO
33 granted patents·8 pending applications·316 citations·filing 1989–2016
97Inventor score
Files withRENESAS TECH CORP15HITACHI LTD7RENESAS ELECTRONICS CORP7HITACHI ULSI SYS CO LTD3HITACHI INT ELECTRIC INC2
Top patents by PatentIndex Score
41 records- 0189US5091761ASemiconductor device having an arrangement of IGFETs and capacitors stacked thereoverHITACHI LTD·Filed 1989·Granted Feb 25, 1992·70 cites·42 claims
- 0288US6833582B2Nonvolatile semiconductor memory deviceRENESAS TECH CORP·Filed 2004·Granted Dec 21, 2004·52 cites·20 claims
- 0388US6521943B1Semiconductor device having thin electrode layer adjacent gate insulator and method of manufactureHITACHI LTD·Filed 2000·Granted Feb 18, 2003·37 cites·23 claims
- 0482US7915686B2Semiconductor device and manufacturing of the sameRENESAS ELECTRONICS CORP·Filed 2006·Granted Mar 29, 2011·8 cites·6 claims
- 0582US6656804B2Semiconductor device and production method thereofHITACHI LTD·Filed 2001·Granted Dec 2, 2003·26 cites·3 claims
- 0680US6144062ASemiconductor device having thin electrode layer adjacent gate insulator and method of manufactureHITACHI LTD·Filed 1998·Granted Nov 7, 2000·35 cites·2 claims
- 0778US10607833B2Method of manufacturing semiconductor device, substrate processing apparatus, and recording mediumHITACHI INT ELECTRIC INC·Filed 2016·Granted Mar 31, 2020·2 cites·15 claims
- 0878US9343527B2Semiconductor device including an isolation film buried in a grooveRENESAS ELECTRONICS CORP·Filed 2012·Granted May 17, 2016·3 cites·7 claims
- 0976US6953728B2Semiconductor device and method of manufacturing thereofHITACHI LTD·Filed 2004·Granted Oct 11, 2005·17 cites·5 claims
- 1076US6727146B2Semiconductor device and method of manufacturing thereofHITACHI LTD·Filed 2002·Granted Apr 27, 2004·17 cites·2 claims
- 1174US8293632B2Manufacturing method of semiconductor deviceKADOSHIMA MASARU·Filed 2010·Granted Oct 23, 2012·5 cites·19 claims
- 1273US6710383B2MISFET semiconductor device having a high dielectric constant insulating film with tapered end portionsRENESAS TECH CORP·Filed 2001·Granted Mar 23, 2004·13 cites·23 claims
- 1371US7855134B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2009·Granted Dec 21, 2010·4 cites·20 claims
- 1468US7863125B2Manufacturing method of CMOS type semiconductor device, and CMOS type semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2009·Granted Jan 4, 2011·3 cites·7 claims
- 1564US7196384B2Semiconductor device and method for manufacturing thereofHITACHI ULSI SYS CO LTD·Filed 2005·Granted Mar 27, 2007·1 cites·2 claims
- 1657US7741201B2Semiconductor device and method of manufacturing a gate stackRENESAS TECH CORP·Filed 2006·Granted Jun 22, 2010·1 cites·7 claims
- 1756US8664053B2Semiconductor device with isolation structures and gate insulating film that contain an element for threshold reduction and method of manufacturing the sameYUGAMI JIRO·Filed 2011·Granted Mar 4, 2014·1 cites·3 claims
- 1855US8796780B2Semiconductor device and manufacturing method thereofYAMAMOTO YOSHIKI·Filed 2009·Granted Aug 5, 2014·1 cites·2 claims
- 1955US6897104B2Semiconductor device and method for manufacturing thereofHITACHI ULSI SYS CO LTD·Filed 2003·Granted May 24, 2005·3 cites·5 claims
- 2054US8823110B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Sep 2, 2014·0 cites·5 claims
- 2150US2014131807A1Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 2249US7193281B2Semiconductor device and process for producing the sameRENESAS TECH CORP·Filed 2005·Granted Mar 20, 2007·0 cites·7 claims
- 2349US6777296B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2002·Granted Aug 17, 2004·2 cites·4 claims
- 2448US6833296B2Method of making a MISFET semiconductor device having a high dielectric constant insulating film with tapered end portionsRENESAS TECH CORP·Filed 2004·Granted Dec 21, 2004·2 cites·12 claims
- 2548US2008308869A1Semiconductor device which has mos structure and method of manufacturing the sameRENESAS TECH CORP·Filed 2008·Application pending·0 cites
- 2648US2016181147A1Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2016·Application pending·0 cites
- 2747US6723625B2Semiconductor device having thin electrode laye adjacent gate insulator and method of manufactureRENESAS TECH CORP·Filed 2002·Granted Apr 20, 2004·2 cites·25 claims
- 2846US7569890B2Manufacturing method of CMOS type semiconductor device, and CMOS type semiconductor deviceRENESAS TECH CORP·Filed 2006·Granted Aug 4, 2009·0 cites·4 claims
- 2946US6849513B2Semiconductor device and production method thereofRENESAS TECH CORP·Filed 2003·Granted Feb 1, 2005·2 cites·3 claims
- 3045US6982468B2Semiconductor device and method for manufacturing thereofHITACHI ULSI SYS CO LTD·Filed 2004·Granted Jan 3, 2006·0 cites·1 claims
- 3145US4989056ASemiconductor capacitorHITACHI LTD·Filed 1989·Granted Jan 29, 1991·9 cites·23 claims
- 3245US2016218012A1Method of forming fine pattern, method of manufacturing semiconductor device, substrate processing apparatus and recording mediumHITACHI INT ELECTRIC INC·Filed 2014·Application pending·0 cites
- 3344US2007007602A1Semiconductor device which has MOS structure and method of manufacturing the sameRENESAS TECH CORP·Filed 2006·Application pending·0 cites
- 3443US8501558B2Semiconductor device and manufacturing method of the sameSHIMAMOTO YASUHIRO·Filed 2011·Granted Aug 6, 2013·0 cites·5 claims
- 3542US8552507B2Semiconductor device and method of manufacturing the sameYUGAMI JIRO·Filed 2009·Granted Oct 8, 2013·0 cites·24 claims
- 3642US2006208325A1Semiconductor device with gate insulating film and manufacturing method thereofRENESAS TECH CORP·Filed 2006·Application pending·0 cites
- 3741US7064400B2Semiconductor device and process for producing the sameRENESAS TECH CORP·Filed 2004·Granted Jun 20, 2006·0 cites·5 claims
- 3841US2008121999A1Semiconductor device which has mos structure and method of manufacturing the sameRENESAS TECH CORP·Filed 2007·Application pending·0 cites
- 3939US8120118B2Semiconductor device and manufacturing method of the sameSAKASHITA SHINSUKE·Filed 2010·Granted Feb 21, 2012·0 cites·5 claims
- 4039US7537987B2Semiconductor device manufacturing methodRENESAS TECH CORP·Filed 2006·Granted May 26, 2009·0 cites·3 claims
- 4137US2002045360A1Semiconductor device and method of manufacturing thereofFiled 2001·Application pending·0 cites
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