Inventor · disambiguated record
Jin Onuki
Also filed as: ONUKI JIN
21 granted patents·2 pending applications·881 citations·filing 1977–2021
96Inventor score
Top patents by PatentIndex Score
23 records- 0196US4999096AMethod of and apparatus for sputteringHITACHI LTD·Filed 1988·Granted Mar 12, 1991·196 cites·20 claims
- 0289US6434008B1Semiconductor deviceHITACHI LTD·Filed 1998·Granted Aug 13, 2002·84 cites·11 claims
- 0389US6353258B1Semiconductor moduleHITACHI LTD·Filed 2000·Granted Mar 5, 2002·65 cites·44 claims
- 0489US5956231ASemiconductor device having power semiconductor elementsHITACHI LTD·Filed 1995·Granted Sep 21, 1999·85 cites·20 claims
- 0589US4965656ASemiconductor deviceHITACHI LTD·Filed 1989·Granted Oct 23, 1990·84 cites·12 claims
- 0686US4482912AStacked structure having matrix-fibered composite layers and a metal layerHITACHI LTD·Filed 1982·Granted Nov 13, 1984·62 cites·12 claims
- 0783US6225598B1Method of high frequency pulse arc welding and apparatus thereforHITACHI LTD·Filed 1998·Granted May 1, 2001·52 cites·16 claims
- 0876US5175608AMethod of and apparatus for sputtering, and integrated circuit deviceHITACHI LTD·Filed 1990·Granted Dec 29, 1992·55 cites·5 claims
- 0969US7141741B2Circuit boardHITACHI HARAMACHI ELECTRONICS·Filed 2003·Granted Nov 28, 2006·12 cites·1 claims
- 1069US4976393ASemiconductor device and production process thereof, as well as wire bonding device used thereforHITACHI LTD·Filed 1987·Granted Dec 11, 1990·40 cites·33 claims
- 1162US5019891ASemiconductor device and method of fabricating the sameHITACHI LTD·Filed 1989·Granted May 28, 1991·29 cites·39 claims
- 1260US12363927B2Wide gap semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2021·Granted Jul 15, 2025·0 cites·8 claims
- 1355US5539244APower semiconductor deviceHITACHI LTD·Filed 1994·Granted Jul 23, 1996·23 cites·16 claims
- 1453US4912544ACorrosion-resistant aluminum electronic materialHITACHI LTD·Filed 1983·Granted Mar 27, 1990·16 cites·9 claims
- 1553US4542398ASemiconductor devices of multi-emitter typeHITACHI LTD·Filed 1984·Granted Sep 17, 1985·16 cites·15 claims
- 1651US5767577AMethod of solder bonding and power semiconductor device manufactured by the methodHITACHI LTD·Filed 1995·Granted Jun 16, 1998·17 cites·64 claims
- 1749US5051812ASemiconductor device and method for manufacturing the sameHITACHI LTD·Filed 1990·Granted Sep 24, 1991·19 cites·20 claims
- 1846US2023042772A1Wide gap semiconductor device and method for manufacturing wide gap semiconductor deviceSHINDENGEN ELECTRIC MFG·Filed 2021·Application pending·0 cites
- 1942US4500904ASemiconductor deviceHITACHI LTD·Filed 1983·Granted Feb 19, 1985·11 cites·15 claims
- 2039US2003016502A1Semiconductor deviceFiled 2002·Application pending·0 cites
- 2134US4110783ASolder layer for a semi-conductor device consisting of at least one group V element, at least one rare element and aluminumHITACHI LTD·Filed 1977·Granted Aug 29, 1978·6 cites·4 claims
- 2233US5153704ASemiconductor device using annealed bonding wireHITACHI LTD·Filed 1992·Granted Oct 6, 1992·5 cites·22 claims
- 2332US4246693AMethod of fabricating semiconductor device by bonding together silicon substrate and electrode or the like with aluminumHITACHI LTD·Filed 1979·Granted Jan 27, 1981·4 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →