Inventor · disambiguated record
Atsushi Gomi
Also filed as: GOMI ATSUSHI
36 granted patents·35 pending applications·226 citations·filing 2003–2024
97Inventor score
Top patents by PatentIndex Score
71 records- 0192US9551060B2Film forming apparatus and film forming methodTOKYO ELECTRON LTD·Filed 2015·Granted Jan 24, 2017·6 cites·12 claims
- 0292US8268078B2Method and apparatus for reducing particle contamination in a deposition systemSUZUKI KENJI·Filed 2006·Granted Sep 18, 2012·14 cites·18 claims
- 0392US8247030B2Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layerSUZUKI KENJI·Filed 2008·Granted Aug 21, 2012·23 cites·19 claims
- 0490US9790590B2Vacuum-processing apparatus, vacuum-processing method, and storage mediumTOKYO ELECTRON LTD·Filed 2013·Granted Oct 17, 2017·6 cites·8 claims
- 0588US7717061B2Gas switching mechanism for plasma processing apparatusTOKYO ELECTRON LTD·Filed 2005·Granted May 18, 2010·20 cites·9 claims
- 0688US6989321B2Low-pressure deposition of metal layers from metal-carbonyl precursorsIBM·Filed 2003·Granted Jan 24, 2006·41 cites·32 claims
- 0787US8399353B2Methods of forming copper wiring and copper film, and film forming systemISHIZAKA TADAHIRO·Filed 2011·Granted Mar 19, 2013·9 cites·13 claims
- 0885US10309005B2Deposition device and deposition methodTOKYO ELECTRON LTD·Filed 2014·Granted Jun 4, 2019·3 cites·19 claims
- 0984US10468237B2Substrate processing apparatusTOKYO ELECTRON LTD·Filed 2018·Granted Nov 5, 2019·3 cites·6 claims
- 1084US6924223B2Method of forming a metal layer using an intermittent precursor gas flow processIBM·Filed 2003·Granted Aug 2, 2005·32 cites·53 claims
- 1182US9404180B2Deposition deviceHARA MASAMICHI·Filed 2011·Granted Aug 2, 2016·6 cites·6 claims
- 1281US10049860B2Substrate processing apparatusTOKYO ELECTRON LTD·Filed 2013·Granted Aug 14, 2018·4 cites·9 claims
- 1381US7892358B2System for introducing a precursor gas to a vapor deposition systemTOKYO ELECTRON LTD·Filed 2006·Granted Feb 22, 2011·4 cites·14 claims
- 1478US7913807B2Vehicle door structureMITSUBISHI MOTORS CORP·Filed 2006·Granted Mar 29, 2011·11 cites·10 claims
- 1576US7491430B2Deposition method for forming a film including metal, nitrogen and carbonTOKYO ELECTRON LTD·Filed 2005·Granted Feb 17, 2009·5 cites·13 claims
- 1675US8349283B2Metal recovery method, metal recovery apparatus, gas exhaust system and film forming device using sameTOKYO ELECTRON LTD·Filed 2009·Granted Jan 8, 2013·4 cites·26 claims
- 1773US8859422B2Method of forming copper wiring and method and system for forming copper filmISHIZAKA TADAHIRO·Filed 2012·Granted Oct 14, 2014·3 cites·26 claims
- 1871US9576850B2Method for manufacturing semiconductor deviceTOKYO ELECTRON LTD·Filed 2013·Granted Feb 21, 2017·2 cites·7 claims
- 1971US9202728B2Substrate mounting mechanism, and substrate processing apparatusHARA MASAMICHI·Filed 2012·Granted Dec 1, 2015·2 cites·10 claims
- 2071US8992686B2Mounting table structure, film forming apparatus and raw material recovery methodGOMI ATSUSHI·Filed 2011·Granted Mar 31, 2015·3 cites·41 claims
- 2170US7858522B2Method for reducing carbon monoxide poisoning in a thin film deposition systemTOKYO ELECTRON LTD·Filed 2006·Granted Dec 28, 2010·3 cites·21 claims
- 2270US7078341B2Method of depositing metal layers from metal-carbonyl precursorsIBM·Filed 2003·Granted Jul 18, 2006·12 cites·40 claims
- 2367US9976217B2Film forming method using reversible decomposition reactionTOKYO ELECTRON LTD·Filed 2014·Granted May 22, 2018·1 cites·4 claims
- 2464US8277889B2Film formation method and film formation apparatusGOMI ATSUSHI·Filed 2008·Granted Oct 2, 2012·2 cites·4 claims
- 2561US2012315404A1Apparatus for thermal and plasma enhanced vapor deposition and method of operatingLI YICHENG·Filed 2012·Application pending·0 cites
- 2660US2010062158A1Gas supply method and gas supply deviceTOKYO ELECTRON LTD·Filed 2009·Application pending·0 cites
- 2759US12180580B2Film forming position misalignment correction method and film forming systemTOKYO ELECTRON LTD·Filed 2023·Granted Dec 31, 2024·0 cites·13 claims
- 2859US12018928B2Film thickness measurement method, film thickness measurement device, and film formation systemTOKYO ELECTRON LTD·Filed 2022·Granted Jun 25, 2024·0 cites·20 claims
- 2958US11894222B2Film forming apparatus and film forming methodTOKYO ELECTRON LTD·Filed 2021·Granted Feb 6, 2024·0 cites·14 claims
- 3057US2007116872A1Apparatus for thermal and plasma enhanced vapor deposition and method of operatingTOKYO ELECTRON LTD·Filed 2005·Application pending·0 cites
- 3156US2024363410A1Methods for making semiconductor devices that include metal cap layersTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 3255US2011263123A1Placing table structureTOKYO ELECTRON LTD·Filed 2009·Application pending·0 cites
- 3354US9062374B2Method for film formation, apparatus for film formation, and computer-readable recording mediumHARA MASAMICHI·Filed 2009·Granted Jun 23, 2015·0 cites·12 claims
- 3454US2023411142A1Metal oxide precleaning prior to metal fillingTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 3553US2013081938A1Magnetron sputtering apparatus and methodMIZUNO SHIGERU·Filed 2012·Application pending·0 cites
- 3652US11551918B2Film forming apparatusTOKYO ELECTRON LTD·Filed 2020·Granted Jan 10, 2023·0 cites·17 claims
- 3752US11404255B2Sputtering method and sputtering apparatusTOKYO ELECTRON LTD·Filed 2020·Granted Aug 2, 2022·0 cites·20 claims
- 3852US2007237895A1Method and system for initiating a deposition process utilizing a metal carbonyl precursorTOKYO ELECTRON LTD·Filed 2006·Application pending·0 cites
- 3952US2007231489A1Method for introducing a precursor gas to a vapor deposition systemTOKYO ELECTRON LTD·Filed 2006·Application pending·0 cites
- 4052US2023005989A1Film forming apparatus and film forming methodTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 4152US2014287163A1Method of forming copper wiring and method and system for forming copper filmTOKYO ELECTRON LTD·Filed 2014·Application pending·0 cites
- 4252US2020123649A1Oxidation processing module, substrate processing system, and oxidation processing methodTOKYO ELECTRON LTD·Filed 2019·Application pending·0 cites
- 4351US12387922B2Film forming apparatus, processing condition determination method, and film forming methodTOKYO ELECTRON LTD·Filed 2022·Granted Aug 12, 2025·0 cites·9 claims
- 4451US2007234955A1Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition systemTOKYO ELECTRON LTD·Filed 2006·Application pending·0 cites
- 4551US2007218200A1Method and apparatus for reducing particle formation in a vapor distribution systemSUZUKI KENJI·Filed 2006·Application pending·0 cites
- 4650US2007054046A1Method of forming a tantalum-containing layer from a metalorganic precursorTOKYO ELECTRON LTD·Filed 2005·Application pending·0 cites
- 4750US2006008595A1Film-forming methodTOKYO ELECTRON LTD·Filed 2005·Application pending·0 cites
- 4850US2007054047A1Method of forming a tantalum-containing layer from a metalorganic precursorTOKYO ELECTRON LTD·Filed 2005·Application pending·0 cites
- 4949US8273409B2Method for film formation, apparatus for film formation, and computer-readable recording mediumHARA MASAMICHI·Filed 2011·Granted Sep 25, 2012·0 cites·5 claims
- 5049US2017317273A1Method for Forming Perpendicular Magnetization Type Magnetic Tunnel Junction Element and Apparatus for Producing Perpendicular Magnetization Type Magnetic Tunnel Junction ElementTOKYO ELECTRON LTD·Filed 2017·Application pending·0 cites
Showing the top 50 of 71 patent records by PatentIndex Score.
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