Method of forming copper wiring and method and system for forming copper film

Abstract

A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs.

1 - 55 . (canceled) 
     
     
         56 . A method of forming a Cu wiring in a concave portion formed in a substrate, the method comprising:
 forming a barrier film on the surface of the concave portion;   forming a Ru film on the barrier film; and   embedding Cu in the concave portion by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of Cu into the concave portion occurs,   wherein the embedding process of Cu in the concave portion is carried out under a process pressure of 35 mTorr to 90 mTorr.   
     
     
         57 . The method of  claim 56 , wherein the concave portion is a trench or hole. 
     
     
         58 . The method of  claim 56 , wherein the Cu film for embedding the Cu is formed by generating plasma using plasma-generating gas in a process chamber in which the substrate is loaded, allowing Cu elements to be emitted from a Cu target, ionizing the Cu elements in the plasma into Cu ions, and applying a bias power to the substrate to cause the Cu ions to be biased towards the substrate. 
     
     
         59 . The method of  claim 58 , wherein the embedding process of Cu in the concave portion is carried out at a temperature of the substrate ranging between 65 degrees C. and 350 degrees C. 
     
     
         60 . The method of  claim 58 , wherein the embedding process of Cu in the concave portion is carried out under a condition that a temperature of the substrate ranges between above 200 degrees C. and up to 350 degrees C., and a magnitude of the bias power is controlled such that a film-deposition amount (T D ) of the Cu ions on the substrate and an etched amount (T E ) of the Cu film by ions of the plasma-generating gas satisfy the correlation of ≦T E /T D <1. 
     
     
         61 . The method of  claim 60 , wherein the magnitude of the bias power is controlled such that it satisfies the correlation of 0.05≦T E /T D ≦0.24. 
     
     
         62 . The method of  claim 58 , wherein the embedding process of Cu in the concave portion is carried out under a condition that a temperature of the substrate ranges between 65 degrees C. and 200 degrees C., and a magnitude of the bias power is controlled such that a film-deposition amount (T D ) of the Cu ions on the substrate and an etched amount (T E ) of the Cu film by ions of the plasma-generating gas satisfy the correlation of 0.02≦T E /T D <1. 
     
     
         63 . The method of  claim 62 , wherein the magnitude of the bias power is controlled such that it satisfies the correlation of 0.05≦T E /T D ≦0.24. 
     
     
         64 . The method of  claim 56 , wherein the barrier film is formed of a film selected from a group including a Ti film, a TiN film, a Ta film, a TaN film, a Ta/TaN film, a TaCN film, a W film, a WN film, a WCN film, a Zr film, a ZrN film, a V film, a VN film, a Nb film, and a NbN film. 
     
     
         65 . The method of  claim 56 , wherein the barrier film is formed by PVD. 
     
     
         66 . The method of  claim 56 , wherein the Ru film is formed by CVD. 
     
     
         67 . A method of forming a Cu film on a predetermined film having a concave portion formed in a substrate including a barrier film and a Ru film, the method comprising:
 embedding Cu in the concave portion on the Ru film using PVD while annealing the substrate such that migration of Cu into the concave portion occurs,   wherein the embedding process of Cu in the concave portion is carried out under a process pressure of 35 mTorr to 90 mTorr.   
     
     
         68 . The method of  claim 67 , wherein the concave portion is a trench or hole. 
     
     
         69 . The method of  claim 67 , wherein the embedment of Cu in the concave portion is carried out by generating plasma using plasma-generating gas in a process chamber in which the substrate is loaded, allowing Cu elements to be emitted from a Cu target, ionizing the Cu elements in the plasma into Cu ions, and applying a bias power to the substrate to cause the Cu ions to be biased towards the substrate. 
     
     
         70 . The method of  claim 69 , wherein a temperature of the substrate is controlled to have a range between 65 degrees C. and 350 degrees C. 
     
     
         71 . The method of  claim 69 , wherein a temperature of the substrate is controlled to have a range between above 200 degrees C. and up to 350 degrees C., and a magnitude of the bias power is controlled such that a film-deposition amount (T D ) of the Cu ions on the substrate and an etched amount (T E ) of the Cu film by ions of the plasma-generating gas satisfy the correlation of 0≦T E /T D <1. 
     
     
         72 . The method of  claim 71 , wherein the magnitude of the bias power is controlled such that it satisfies the correlation of 0.05≦T E /T D ≦0.24. 
     
     
         73 . The method of  claim 69 , wherein a temperature of the substrate is controlled to have a range between 65 degrees C. and 200 degrees C., and a magnitude of the bias power is controlled such that a film-deposition amount (T D ) of the Cu ions on the substrate and an etched amount (T E ) of the Cu film by ions of the plasma-generating gas satisfy the correlation of 0.02≦T E /T D <1. 
     
     
         74 . The method of  claim 73 , wherein the magnitude of the bias power is controlled such that it satisfies the correlation of 0.05≦T E /T D ≦0.24.