Inventor · disambiguated record
Jinhong Tong
Also filed as: TONG JINHONG
40 granted patents·4 pending applications·716 citations·filing 2006–2015
97Inventor score
Top patents by PatentIndex Score
44 records- 0198US8821985B2Method and apparatus for high-K gate performance improvement and combinatorial processingINTERMOLECULAR INC·Filed 2012·Granted Sep 2, 2014·342 cites·12 claims
- 0298US7972897B2Methods for forming resistive switching memory elementsINTERMOLECULAR INC·Filed 2007·Granted Jul 5, 2011·75 cites·24 claims
- 0398US7629198B2Methods for forming nonvolatile memory elements with resistive-switching metal oxidesINTERMOLECULAR INC·Filed 2007·Granted Dec 8, 2009·118 cites·40 claims
- 0496US7678607B2Methods for forming resistive switching memory elementsINTERMOLECULAR INC·Filed 2007·Granted Mar 16, 2010·40 cites·31 claims
- 0594US8658511B1Etching resistive switching and electrode layersINTERMOLECULAR INC·Filed 2012·Granted Feb 25, 2014·26 cites·19 claims
- 0694US7704789B2Methods for forming resistive switching memory elementsINTERMOLECULAR INC·Filed 2007·Granted Apr 27, 2010·29 cites·14 claims
- 0790US8613863B2Methods for selective etching of a multi-layer substrateTONG JINHONG·Filed 2011·Granted Dec 24, 2013·14 cites·7 claims
- 0886US8476107B2Methods for forming resistive switching memory elementsKUMAR NITIN·Filed 2011·Granted Jul 2, 2013·5 cites·7 claims
- 0982US8859427B2Formation of a zinc passivation layer on titanium or titanium alloys used in semiconductor processingKONG BOB·Filed 2011·Granted Oct 14, 2014·4 cites·3 claims
- 1082US8097878B2Nonvolatile memory elements with metal-deficient resistive-switching metal oxidesKUMAR NITIN·Filed 2007·Granted Jan 17, 2012·14 cites·3 claims
- 1182US7879710B2Substrate processing including a masking layerINTERMOLECULAR INC·Filed 2006·Granted Feb 1, 2011·6 cites·13 claims
- 1281US8545998B2Electroless deposition of platinum on copperKONG BOB·Filed 2011·Granted Oct 1, 2013·4 cites·15 claims
- 1379US9245848B2Methods for coating a substrate with an amphiphilic compoundINTERMOLECULAR INC·Filed 2014·Granted Jan 26, 2016·3 cites·15 claims
- 1479US8575021B2Substrate processing including a masking layerINTERMOLECULAR INC·Filed 2013·Granted Nov 5, 2013·4 cites·16 claims
- 1576US8802492B2Method for forming resistive switching memory elementsTONG JINHONG·Filed 2011·Granted Aug 12, 2014·3 cites·19 claims
- 1674US8728879B2Formation of a zinc passivation layer on titanium or titanium alloys used in semiconductor processingKONG BOB·Filed 2012·Granted May 20, 2014·2 cites·18 claims
- 1774US8344375B2Nonvolatile memory elements with metal deficient resistive switching metal oxidesINTERMOLECULAR INC·Filed 2011·Granted Jan 1, 2013·4 cites·20 claims
- 1873US8822265B2Method for reducing forming voltage in resistive random access memoryINTERMOLECULAR INC·Filed 2012·Granted Sep 2, 2014·2 cites·19 claims
- 1972US8975613B1Resistive-switching memory elements having improved switching characteristicsKUSE RONALD JOHN·Filed 2009·Granted Mar 10, 2015·5 cites·16 claims
- 2071US9330928B2Methods for selective etching of a multi-layer substrateINTERMOLECULAR INC·Filed 2013·Granted May 3, 2016·2 cites·12 claims
- 2170US8143164B2Formation of a zinc passivation layer on titanium or titanium alloys used in semiconductor processingKONG BOB·Filed 2009·Granted Mar 27, 2012·2 cites·4 claims
- 2269US9023137B2Electroless deposition of platinum on copperINTERMOLECULAR INC·Filed 2013·Granted May 5, 2015·1 cites·20 claims
- 2369US8426970B2Substrate processing including a masking layerFRESCO ZACHARY·Filed 2010·Granted Apr 23, 2013·2 cites·10 claims
- 2469US8283214B1Methods for forming nickel oxide films for use with resistive switching memory devicesSUN ZHI-WEN·Filed 2007·Granted Oct 9, 2012·3 cites·13 claims
- 2568US9761800B2Method for reducing forming voltage in resistive random access memoryINTERMOLECULAR INC·Filed 2014·Granted Sep 12, 2017·1 cites·16 claims
- 2668US8871860B2Methods for coating a substrate with an amphiphilic compoundINTERMOLECULAR INC·Filed 2013·Granted Oct 28, 2014·1 cites·14 claims
- 2764US9276203B2Resistive switching layers including Hf-Al-OINTERMOLECULAR INC·Filed 2012·Granted Mar 1, 2016·1 cites·20 claims
- 2864US8741698B2Atomic layer deposition of zirconium oxide for forming resistive-switching materialsTONG JINHONG·Filed 2011·Granted Jun 3, 2014·1 cites·18 claims
- 2964US8735305B2Methods of forming fluorinated hafnium oxide gate dielectrics by atomic layer depositionTONG JINHONG·Filed 2012·Granted May 27, 2014·1 cites·16 claims
- 3061US8551560B2Methods for improving selectivity of electroless deposition processesTONG JINHONG·Filed 2009·Granted Oct 8, 2013·1 cites·12 claims
- 3160US9543516B2Method for forming a doped metal oxide for use in resistive switching memory elementsINTERMOLECULAR INC·Filed 2014·Granted Jan 10, 2017·0 cites·20 claims
- 3259US8609475B2Methods for forming nickel oxide films for use with resistive switching memory devices/USSUN ZHI-WEN·Filed 2012·Granted Dec 17, 2013·0 cites·20 claims
- 3359US2013334491A1Methods for Forming Nickel Oxide Films for Use With Resistive Switching Memory DevicesINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 3458US9178031B2Methods of atomic-layer deposition of hafnium oxide/erbium oxide bi-layer as advanced gate dielectricsINTERMOLECULAR INC·Filed 2014·Granted Nov 3, 2015·0 cites·18 claims
- 3557US9178145B2Methods for forming resistive switching memory elementsINTERMOLECULAR INC·Filed 2014·Granted Nov 3, 2015·0 cites·20 claims
- 3655US2010055422A1Electroless Deposition of Platinum on CopperKONG BOB·Filed 2008·Application pending·0 cites
- 3754US9029233B1Resistive-switching memory elements having improved switching characteristicsINTERMOLECULAR INC·Filed 2015·Granted May 12, 2015·0 cites·20 claims
- 3852US8846543B2Methods of atomic layer deposition of hafnium oxide / erbium oxide bi-layer as advanced gate dielectricsTONG JINHONG·Filed 2012·Granted Sep 30, 2014·0 cites·13 claims
- 3948US8535972B2Methods for coating a substrate with an amphiphilic compoundFRESCO ZACHARY M·Filed 2008·Granted Sep 17, 2013·0 cites·15 claims
- 4048US7884036B1Methods for treating substrates in preparation for subsequent processesINTERMOLECULAR INC·Filed 2007·Granted Feb 8, 2011·0 cites·18 claims
- 4146US8889479B2Nonvolatile memory elements with metal-deficient resistive-switching metal oxidesINTERMOLECULAR INC·Filed 2012·Granted Nov 18, 2014·0 cites·19 claims
- 4246US8716125B2Methods of in-situ vapor phase deposition of self-assembled monolayers as copper adhesion promoters and diffusion barriersTONG JINHONG·Filed 2012·Granted May 6, 2014·0 cites·17 claims
- 4340US2013316546A1Methods of atomic layer deposition of hafnium oxide as gate dielectricsTONG JINHONG·Filed 2012·Application pending·0 cites
- 4434US2014054531A1Defect enhancement of a switching layer in a nonvolatile resistive memory elementLU NAN·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →