Inventor · disambiguated record
Masanori Terahara
Also filed as: TERAHARA MASANORI
25 granted patents·5 pending applications·253 citations·filing 2003–2024
95Inventor score
Files withFUJITSU SEMICONDUCTOR LTD8SANDISK TECHNOLOGIES INC5SANDISK TECHNOLOGIES LLC5FUJITSU LTD3FUJITSU MICROELECTRONICS LTD3
Top patents by PatentIndex Score
30 records- 0197US11282783B2Three-dimensional memory device with via structures surrounded by perforated dielectric moat structure and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Mar 22, 2022·7 cites·19 claims
- 0297US10014316B2Three-dimensional memory device with leakage reducing support pillar structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jul 3, 2018·35 cites·23 claims
- 0397US9437606B2Method of making a three-dimensional memory array with etch stopSANDISK TECHNOLOGIES INC·Filed 2013·Granted Sep 6, 2016·38 cites·16 claims
- 0496US11398497B2Three-dimensional memory device containing auxiliary support pillar structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jul 26, 2022·5 cites·20 claims
- 0596US9548313B2Method of making a monolithic three dimensional NAND string using a select gate etch stop layerSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jan 17, 2017·25 cites·17 claims
- 0696US9099496B2Method of forming an active area with floating gate negative offset profile in FG NAND memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted Aug 4, 2015·31 cites·34 claims
- 0795US10872857B1Three-dimensional memory device containing through-array contact via structures between dielectric barrier walls and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Dec 22, 2020·17 cites·20 claims
- 0893US9530788B2Metallic etch stop layer in a three-dimensional memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 27, 2016·24 cites·32 claims
- 0993US9093480B2Spacer passivation for high aspect ratio etching of multilayer stacks for three dimensional NAND deviceSANDISK TECHNOLOGIES INC·Filed 2013·Granted Jul 28, 2015·16 cites·23 claims
- 1092US7601576B2Method for fabricating semiconductor deviceFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Oct 13, 2009·24 cites·18 claims
- 1178US7701016B2Semiconductor device having device characteristics improved by straining surface of active region and its manufacture methodFUJITSU LTD·Filed 2006·Granted Apr 20, 2010·7 cites·7 claims
- 1277US7951686B2Method of manufacturing semiconductor device having device characteristics improved by straining surface of active regionFUJITSU LTD·Filed 2010·Granted May 31, 2011·4 cites·9 claims
- 1376US7947567B2Method of fabricating a semiconductor device with reduced oxide film variationFUJITSU SEMICONDUCTOR LTD·Filed 2007·Granted May 24, 2011·5 cites·11 claims
- 1472US7501686B2Semiconductor device and method for manufacturing the sameFUJITSU MICROELECTRONICS LTD·Filed 2006·Granted Mar 10, 2009·6 cites·19 claims
- 1568US7541120B2Manufacturing method of semiconductor deviceFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Jun 2, 2009·2 cites·20 claims
- 1666US7846792B2Method for manufacturing semiconductor device and semiconductor device manufacturing systemFUJITSU SEMICONDUCTOR LTD·Filed 2009·Granted Dec 7, 2010·3 cites·7 claims
- 1765US8709896B2Semiconductor device and fabrication methodHANEDA MASAKI·Filed 2012·Granted Apr 29, 2014·2 cites·11 claims
- 1864US2025176179A1Three-dimensional memory device with dummy slit regions and methods of making the sameWESTERN DIGITAL TECH INC·Filed 2024·Application pending·0 cites
- 1959US2025174550A1Three-dimensional memory device with variable word line via contact density as function of contact depth and methods of forming the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 2054US8043917B2Method for manufacturing semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2009·Granted Oct 25, 2011·0 cites·12 claims
- 2151US8039358B2Method of manufacturing semiconductor device on which a plurality of types of transistors are mountedFUJITSU SEMICONDUCTOR LTD·Filed 2008·Granted Oct 18, 2011·0 cites·4 claims
- 2248US8847282B2Semiconductor device and fabrication methodFUJITSU SEMICONDUCTOR LTD·Filed 2014·Granted Sep 30, 2014·0 cites·6 claims
- 2347US8273630B2Method for manufacturing semiconductor deviceWADA TAKAYUKI·Filed 2011·Granted Sep 25, 2012·0 cites·15 claims
- 2447US6979610B2Semiconductor device fabrication methodFUJITSU LTD·Filed 2003·Granted Dec 27, 2005·2 cites·20 claims
- 2547US2012001265A1Method of manufacturing semiconductor device which a plurality of types of transistors are mountedTERAHARA MASANORI·Filed 2011·Application pending·0 cites
- 2644US9117675B2Semiconductor device production methodFUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Aug 25, 2015·0 cites·5 claims
- 2744US8835327B2Method of manufacturing semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Sep 16, 2014·0 cites·7 claims
- 2843US2014051222A1Method of manufacturing semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2013·Application pending·0 cites
- 2942US8193048B2Semiconductor device and method of manufacturing a semiconductor deviceMIYAMOTO MASATO·Filed 2008·Granted Jun 5, 2012·0 cites·14 claims
- 3042US2020357815A1A three-dimensional memory device having a backside contact via structure with a laterally bulging portion at a level of source contact layerSANDISK TECHNOLOGIES LLC·Filed 2019·Application pending·0 cites
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