Inventor · disambiguated record
Yun Shi
Also filed as: SHI YUN · SHI YUN-HUA
63 granted patents·6 pending applications·558 citations·filing 2005–2025
98Inventor score
Top patents by PatentIndex Score
69 records- 0199US7790524B2Device and design structures for memory cells in a non-volatile random access memory and methods of fabricating such device structuresIBM·Filed 2008·Granted Sep 7, 2010·248 cites·16 claims
- 0297US7790543B2Device structures for a metal-oxide-semiconductor field effect transistor and methods of fabricating such device structuresIBM·Filed 2008·Granted Sep 7, 2010·80 cites·9 claims
- 0395US9224858B1Lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) with a below source isolation region and a method of forming the LDMOSFETIBM·Filed 2014·Granted Dec 29, 2015·20 cites·20 claims
- 0492US11862725B2Transistors with schottky barriersSKYWORKS SOLUTIONS INC·Filed 2022·Granted Jan 2, 2024·2 cites·20 claims
- 0592US7999320B2SOI radio frequency switch with enhanced signal fidelity and electrical isolationIBM·Filed 2008·Granted Aug 16, 2011·21 cites·10 claims
- 0691US11417762B2Switch with integrated Schottky barrier contactSKYWORKS SOLUTIONS INC·Filed 2020·Granted Aug 16, 2022·3 cites·17 claims
- 0791US8492866B1Isolated Zener diodeANDERSON FREDERICK G·Filed 2012·Granted Jul 23, 2013·15 cites·23 claims
- 0890US10050115B2Tapered gate oxide in LDMOS devicesIBM·Filed 2014·Granted Aug 14, 2018·11 cites·10 claims
- 0990US9786606B2Semiconductor structures with isolated ohmic trenches and stand-alone isolation trenches and related methodGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 10, 2017·9 cites·11 claims
- 1090US8299544B2Field effect transistor having ohmic body contact(s), an integrated circuit structure incorporating stacked field effect transistors with such ohmic body contacts and associated methodsABOU-KHALIL MICHEL J·Filed 2011·Granted Oct 30, 2012·12 cites·10 claims
- 1188US8216909B2Field effect transistor with air gap dielectricABADEER WAGDI W·Filed 2009·Granted Jul 10, 2012·14 cites·5 claims
- 1287US8133774B2SOI radio frequency switch with enhanced electrical isolationBOTULA ALAN B·Filed 2009·Granted Mar 13, 2012·12 cites·25 claims
- 1386US7670889B2Structure and method for fabrication JFET in CMOSIBM·Filed 2008·Granted Mar 2, 2010·12 cites·19 claims
- 1485US9799652B1Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structureGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 24, 2017·3 cites·20 claims
- 1585US8598660B2Stress enhanced LDMOS transistor to minimize on-resistance and maintain high breakdown voltageCAMILLO-CASTILLO RENATA·Filed 2011·Granted Dec 3, 2013·7 cites·11 claims
- 1685US8349697B2Field effect transistor with air gap dielectricIBM·Filed 2012·Granted Jan 8, 2013·6 cites·5 claims
- 1783US9337310B2Low leakage, high frequency devicesIBM·Filed 2014·Granted May 10, 2016·5 cites·18 claims
- 1882US8399927B2Semiconductor structure including a high performance fet and a high voltage fet on an SOI substrateDING HANYI·Filed 2012·Granted Mar 19, 2013·5 cites·12 claims
- 1982US7485965B2Through via in ultra high resistivity wafer and related methodsIBM·Filed 2007·Granted Feb 3, 2009·10 cites·9 claims
- 2080US8518782B2Semiconductor device including asymmetric lightly doped drain (LDD) region, related method and design structureBOTULA ALAN B·Filed 2010·Granted Aug 27, 2013·4 cites·9 claims
- 2179US9768028B1Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structureGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 19, 2017·2 cites·19 claims
- 2279US8748285B2Noble gas implantation region in top silicon layer of semiconductor-on-insulator substrateBOTULA ALAN B·Filed 2011·Granted Jun 10, 2014·5 cites·12 claims
- 2377US7939395B2High-voltage SOI MOS device structure and method of fabricationIBM·Filed 2009·Granted May 10, 2011·6 cites·20 claims
- 2474US12191353B2Transistors for radio-frequency circuits and devicesSKYWORKS SOLUTIONS INC·Filed 2023·Granted Jan 7, 2025·0 cites·16 claims
- 2574US8916440B2Semiconductor structures and methods of manufactureCLARK JR WILLIAM F·Filed 2012·Granted Dec 23, 2014·3 cites·15 claims
- 2674US8586423B2Silicon controlled rectifier with stress-enhanced adjustable trigger voltageCAMILLO-CASTILLO RENATA·Filed 2011·Granted Nov 19, 2013·3 cites·16 claims
- 2773US9236449B2High voltage laterally diffused metal oxide semiconductorIBM·Filed 2013·Granted Jan 12, 2016·3 cites·18 claims
- 2873US9059276B2High voltage laterally diffused metal oxide semiconductorIBM·Filed 2013·Granted Jun 16, 2015·3 cites·19 claims
- 2972US8962402B1Lateral diffusion metal oxide semiconductor (LDMOS) device with tapered drift electrodeIBM·Filed 2013·Granted Feb 24, 2015·3 cites·19 claims
- 3072US8912597B2Semiconductor device including asymmetric lightly doped drain (LDD) region, related method and design structureIBM·Filed 2013·Granted Dec 16, 2014·2 cites·10 claims
- 3172US8003072B2Superconductor fabricationCAMBRIDGE ENTPR LTD·Filed 2005·Granted Aug 23, 2011·2 cites·12 claims
- 3271US8299558B2Self-aligned Schottky diodeBOTULA ALAN B·Filed 2011·Granted Oct 30, 2012·2 cites·16 claims
- 3369US8866226B2SOI radio frequency switch with enhanced electrical isolationBOTULA ALAN B·Filed 2012·Granted Oct 21, 2014·2 cites·17 claims
- 3469US2025254944A1Transistor devices, circuits and methods for radio-frequency applicationsSKYWORKS SOLUTIONS INC·Filed 2025·Application pending·0 cites
- 3568US8299561B2Shielding for high-voltage semiconductor-on-insulator devicesBOTULA ALAN B·Filed 2010·Granted Oct 30, 2012·2 cites·24 claims
- 3668US8216890B2Lateral hyperabrupt junction varactor diode in an SOI substrateJOHNSON JEFFREY B·Filed 2009·Granted Jul 10, 2012·3 cites·9 claims
- 3767US8981475B2Lateral diffusion metal oxide semiconductor (LDMOS)IBM·Filed 2013·Granted Mar 17, 2015·2 cites·20 claims
- 3867US8350338B2Semiconductor device including high field regions and related methodIBM·Filed 2011·Granted Jan 8, 2013·2 cites·19 claims
- 3965US7939911B2Back-end-of-line resistive semiconductor structuresIBM·Filed 2008·Granted May 10, 2011·2 cites·20 claims
- 4064US9847415B2Field effect transistor and method of manufactureIBM·Filed 2014·Granted Dec 19, 2017·1 cites·20 claims
- 4164US8946799B2Silicon controlled rectifier with stress-enhanced adjustable trigger voltageIBM·Filed 2013·Granted Feb 3, 2015·1 cites·18 claims
- 4264US7804119B2Device structures with a hyper-abrupt P-N junction, methods of forming a hyper-abrupt P-N junction, and design structures for an integrated circuitIBM·Filed 2008·Granted Sep 28, 2010·2 cites·8 claims
- 4363US11705487B2Transistors having reduced parasitics and enhanced performanceSKYWORKS SOLUTIONS INC·Filed 2020·Granted Jul 18, 2023·0 cites·8 claims
- 4463US9034712B2Stress enhanced LDMOS transistor to minimize on-resistance and maintain high breakdown voltageIBM·Filed 2013·Granted May 19, 2015·1 cites·11 claims
- 4561US9324632B2Semiconductor structures with isolated ohmic trenches and stand-alone isolation trenches and related methodGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 26, 2016·1 cites·10 claims
- 4661US9041105B2Integrated circuit including transistor structure on depleted silicon-on-insulator, related method and design structureCLARK JR WILLIAM F·Filed 2012·Granted May 26, 2015·1 cites·12 claims
- 4761US8012814B2Method of forming a high performance fet and a high voltage fet on a SOI substrateIBM·Filed 2008·Granted Sep 6, 2011·2 cites·20 claims
- 4860US8552532B2Self aligned structures and design structure thereofCLARK JR WILLIAM F·Filed 2012·Granted Oct 8, 2013·1 cites·17 claims
- 4959US7977201B2Methods for forming back-end-of-line resistive semiconductor structuresIBM·Filed 2008·Granted Jul 12, 2011·1 cites·25 claims
- 5056US8008142B2Self-aligned Schottky diodeIBM·Filed 2009·Granted Aug 30, 2011·0 cites·19 claims
Showing the top 50 of 69 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →