Inventor · disambiguated record
Steven C. H. Hung
Also filed as: HUNG STEVEN · HUNG STEVEN C · HUNG STEVEN C H
40 granted patents·18 pending applications·94 citations·filing 2005–2025
96Inventor score
Top patents by PatentIndex Score
58 records- 0196US11289579B2P-type dipole for p-FETAPPLIED MATERIALS INC·Filed 2020·Granted Mar 29, 2022·4 cites·10 claims
- 0295US11658218B2P-type dipole for p-FETAPPLIED MATERIALS INC·Filed 2022·Granted May 23, 2023·2 cites·19 claims
- 0393US11417517B2Treatments to enhance material structuresAPPLIED MATERIALS INC·Filed 2020·Granted Aug 16, 2022·2 cites·20 claims
- 0492US7837838B2Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatusAPPLIED MATERIALS INC·Filed 2006·Granted Nov 23, 2010·20 cites·27 claims
- 0592US7317229B2Gate electrode structures and methods of manufactureAPPLIED MATERIALS INC·Filed 2005·Granted Jan 8, 2008·19 cites·15 claims
- 0691US10347492B2Modifying work function of a metal film with a plasma processAPPLIED MATERIALS INC·Filed 2018·Granted Jul 9, 2019·6 cites·17 claims
- 0789US10872763B2Treatments to enhance material structuresAPPLIED MATERIALS INC·Filed 2019·Granted Dec 22, 2020·5 cites·16 claims
- 0888US11245022B2Integrated dipole flow for transistorAPPLIED MATERIALS INC·Filed 2020·Granted Feb 8, 2022·2 cites·7 claims
- 0988US7645710B2Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma systemAPPLIED MATERIALS INC·Filed 2007·Granted Jan 12, 2010·13 cites·19 claims
- 1086US9748354B2Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereofAPPLIED MATERIALS INC·Filed 2016·Granted Aug 29, 2017·5 cites·20 claims
- 1182US12288717B2Metal based hydrogen barrierAPPLIED MATERIALS INC·Filed 2024·Granted Apr 29, 2025·0 cites·11 claims
- 1282US2024266163A1Treatments to enhance material structuresAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1381US7678710B2Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma systemAPPLIED MATERIALS INC·Filed 2006·Granted Mar 16, 2010·7 cites·37 claims
- 1480US11996455B2P-type dipole for P-FETAPPLIED MATERIALS INC·Filed 2023·Granted May 28, 2024·0 cites·16 claims
- 1578US11961734B2Treatments to enhance material structuresAPPLIED MATERIALS INC·Filed 2022·Granted Apr 16, 2024·0 cites·10 claims
- 1678US11955332B2Treatments to enhance material structuresAPPLIED MATERIALS INC·Filed 2022·Granted Apr 9, 2024·0 cites·18 claims
- 1778US7541650B2Gate electrode structuresAPPLIED MATERIALS INC·Filed 2007·Granted Jun 2, 2009·5 cites·12 claims
- 1875US12051734B2PMOS high-k metal gatesAPPLIED MATERIALS INC·Filed 2022·Granted Jul 30, 2024·0 cites·13 claims
- 1975US2024379349A1Treatments to enhance material structuresAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2074US11062900B2Method of reducing effective oxide thickness in a semiconductor structureAPPLIED MATERIALS INC·Filed 2019·Granted Jul 13, 2021·1 cites·19 claims
- 2174US2025006499A1Integrated dipole region for transistorAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2273US12020982B2Metal based hydrogen barrierAPPLIED MATERIALS INC·Filed 2022·Granted Jun 25, 2024·0 cites·14 claims
- 2373US11075276B2Methods and apparatus for n-type metal oxide semiconductor (NMOS) metal gate materials using atomic layer deposition (ALD) processes with metal based precursorsAPPLIED MATERIALS INC·Filed 2019·Granted Jul 27, 2021·1 cites·16 claims
- 2471US12112951B2Integrated dipole region for transistorAPPLIED MATERIALS INC·Filed 2022·Granted Oct 8, 2024·0 cites·9 claims
- 2568US11923441B2Gate all around I/O engineeringAPPLIED MATERIALS INC·Filed 2022·Granted Mar 5, 2024·0 cites·15 claims
- 2668US11888045B2Integrated dipole flow for transistorAPPLIED MATERIALS INC·Filed 2021·Granted Jan 30, 2024·0 cites·16 claims
- 2766US11552177B2PMOS high-K metal gatesAPPLIED MATERIALS INC·Filed 2020·Granted Jan 10, 2023·0 cites·7 claims
- 2866US11450759B2Gate all around I/O engineeringAPPLIED MATERIALS INC·Filed 2020·Granted Sep 20, 2022·0 cites·19 claims
- 2965US9437640B2Engineering induced tunable electrostatic effectAPPLIED MATERIALS INC·Filed 2014·Granted Sep 6, 2016·0 cites·20 claims
- 3063US2025142957A1N-channel coupled with p-channel and methods of manufactureAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3163US2020373200A1Metal based hydrogen barrierAPPLIED MATERIALS INC·Filed 2020·Application pending·0 cites
- 3262US12183798B2Threshold voltage modulation for gate-all-around FET architectureAPPLIED MATERIALS INC·Filed 2021·Granted Dec 31, 2024·0 cites·20 claims
- 3362US11456178B2Gate interface engineering with doped layerAPPLIED MATERIALS INC·Filed 2021·Granted Sep 27, 2022·0 cites·20 claims
- 3462US9269574B2Methods of fabricating dielectric films from metal amidinate precursorsHUNG STEVEN·Filed 2013·Granted Feb 23, 2016·1 cites·7 claims
- 3562US8927438B2Methods for manufacturing high dielectric constant filmsKIM HYUNGJUN·Filed 2012·Granted Jan 6, 2015·1 cites·11 claims
- 3661US2024365551A13d nand cells with enhanced erase speed through dipole engineering and methods of making the sameAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3760US2021057215A1Treatments to enhance material structuresAPPLIED MATERIALS INC·Filed 2020·Application pending·0 cites
- 3860US2024234133A1Treatments to enhance material structuresAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 3959US2025372369A1Methods of fabricating high-k gate structuresAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 4058US12230688B2MOSFET gate engineerinng with dipole filmsAPPLIED MATERIALS INC·Filed 2022·Granted Feb 18, 2025·0 cites·10 claims
- 4157US10431466B2Hydrogenation and nitridization processes for modifying effective oxide thickness of a filmAPPLIED MATERIALS INC·Filed 2018·Granted Oct 1, 2019·0 cites·20 claims
- 4257US2023377901A1Methods for patterning substrates to adjust voltage propertiesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 4356US11271097B2Cap oxidation for FinFET formationAPPLIED MATERIALS INC·Filed 2020·Granted Mar 8, 2022·0 cites·20 claims
- 4455US12100595B2Amorphous silicon-based scavenging and sealing EOTAPPLIED MATERIALS INC·Filed 2021·Granted Sep 24, 2024·0 cites·19 claims
- 4555US11189479B2Diffusion barrier layerAPPLIED MATERIALS INC·Filed 2020·Granted Nov 30, 2021·0 cites·13 claims
- 4655US11171047B2Fluorine-doped nitride films for improved high-k reliabilityAPPLIED MATERIALS INC·Filed 2020·Granted Nov 9, 2021·0 cites·18 claims
- 4755US2019287805A1Modifying work function of a metal film with a plasma processAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
- 4855US2023402291A1Methods for patterning substrates to adjust voltage propertiesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 4950US12249511B2Treatments to improve device performanceAPPLIED MATERIALS INC·Filed 2021·Granted Mar 11, 2025·0 cites·7 claims
- 5049US10510545B2Hydrogenation and nitridization processes for modifying effective oxide thickness of a filmAPPLIED MATERIALS INC·Filed 2019·Granted Dec 17, 2019·0 cites·20 claims
Showing the top 50 of 58 patent records by PatentIndex Score.
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