Metal based hydrogen barrier

Abstract

A method of forming an electronic device is disclosed. The method comprises forming depositing a metal on a substrate, the metal comprising one or more of copper (Cu), titanium (Ti), or tantalum (Ta). A metal cap is deposited on the metal, the metal cap comprising one or more of molybdenum (Mo), ruthenium (Ru), iridium (Ir), rhodium (Rh), palladium (Pd), silver (Ag), osmium (Os), platinum (Pt), or gold (Au). The substrate is then exposed to a hydrogen high-pressure anneal. The formation of the metal cap on the metal minimizes parasitic adsorption of hydrogen by the underlying metal.

What is claimed is: 
     
         1 . An electronic device comprising:
 a metal on a substrate, the metal comprising one or more of copper (Cu), titanium (Ti), or tantalum (Ta); and   a metal cap on the metal, the metal cap comprising one or more of molybdenum (Mo), ruthenium (Ru), iridium (Ir), rhodium (Rh), palladium (Pd), silver (Ag), osmium (Os), platinum (Pt), or gold (Au).   
     
     
         2 . The electronic device of  claim 1 , wherein the substrate comprises one or more of comprising one or more of silicon (Si), germanium (Ge), gallium (Ga), arsenic (As), indium (In), phosphorus (P), selenium (Se), or tungsten (W). 
     
     
         3 . The electronic device of  claim 1 , wherein the substrate has at least one feature formed thereon. 
     
     
         4 . The electronic device of  claim 3 , wherein the feature is selected from one or more of a trench, a via, a fin, a peak. 
     
     
         5 . The electronic device of  claim 4 , wherein the feature is a trench. 
     
     
         6 . The electronic device of  claim 5 , wherein the metal comprises a liner. 
     
     
         7 . The electronic device of  claim 6 , wherein liner is selected from one or more of titanium nitride (TiN) or tantalum nitride (TaN). 
     
     
         8 . The electronic device of  claim 1 , wherein the metal cap comprises ruthenium. 
     
     
         9 . The electronic device of  claim 1 , wherein the metal cap has a thickness in a range about 5 Å to about 500 Å. 
     
     
         10 . A method of manufacturing an electronic device, the method comprising:
 depositing a metal on a substrate, the metal comprising one or more of copper (Cu), titanium (Ti), or tantalum (Ta);   depositing a metal cap on the metal, the metal cap comprising one or more of molybdenum (Mo), ruthenium (Ru), iridium (Ir), rhodium (Rh), palladium (Pd), silver (Ag), osmium (Os), platinum (Pt), or gold (Au); and   optionally, exposing the substrate to an anneal process.   
     
     
         11 . The method of  claim 10 , wherein the metal cap absorbs less than about 3% of hydrogen (H 2 ) during the anneal process. 
     
     
         12 . The method of  claim 10 , wherein the metal cap comprises ruthenium. 
     
     
         13 . The method of  claim 10 , wherein the substrate has at least one feature formed thereon. 
     
     
         14 . The method of  claim 13 , wherein the feature is selected from one or more of a trench, a via, a fin, or a peak. 
     
     
         15 . The method of  claim 14 , wherein the feature is a trench. 
     
     
         16 . The method of  claim 15 , wherein the metal is a liner and the liner is selected from one or more of titanium nitride (TiN) or tantalum nitride (TaN). 
     
     
         17 . A processing tool comprising:
 a central transfer station comprising at least one robot configured to move a wafer;   a plurality of process stations, each process station connected to the central transfer station and providing a processing region separated from processing regions of adjacent process stations, the plurality of process stations comprising one or more of a metal deposition chamber and a metal cap deposition chamber;   an optional pre-clean station connected to the central transfer station; and   a controller connected to the central transfer station and the plurality of process stations, the controller configured to activate the robot to move the wafer between process stations, and to control a process occurring in each of the process stations.   
     
     
         18 . The processing tool of  claim 17 , wherein one or more of the metal deposition chamber or the metal cap deposition chamber comprises a spatial atomic layer deposition chamber. 
     
     
         19 . A memory device comprising the electronic device of  claim 1 . 
     
     
         20 . A logic device comprising the electronic device of  claim 1 .